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RGTH80TS65DGC11

RGTH80TS65DGC11
Mfr. #:
RGTH80TS65DGC11
Fabricante:
Rohm Semiconductor
Descripción:
IGBT Transistors 650V 40A IGBT Stop Trench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
RGTH80TS65DGC11 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
RGTH80TS65DGC11 más información
Atributo del producto
Valor de atributo
Fabricante:
Semiconductor ROHM
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Voltaje colector-emisor VCEO Max:
650 V
Voltaje de saturación colector-emisor:
1.6 V
Voltaje máximo del emisor de puerta:
30 V
Corriente continua del colector a 25 C:
70 A
Pd - Disipación de energía:
234 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 175 C
Serie:
RGTH80TS65D
Embalaje:
Tubo
Corriente continua de colector Ic Max:
70 A
Rango de temperatura de funcionamiento:
- 40 C to + 175 C
Marca:
Semiconductor ROHM
Corriente continua del colector:
40 A
Corriente de fuga puerta-emisor:
+/- 200 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
450
Subcategoría:
IGBT
Parte # Alias:
RGTH80TS65D
Unidad de peso:
1.340411 oz
Tags
RGTH80TS, RGTH8, RGTH, RGT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 650V 70A 234000mW 3-Pin(3+Tab) TO-247N Bulk
***ark
Igbt, Single, 650V, 70A, To-247N-3; Dc Collector Current:70A; Collector Emitter Saturation Voltage Vce(On):1.6V; Power Dissipation Pd:234W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:to-247N; No. Of Pins:3Pins; Rohs Compliant: Yes
***i-Key
IGBT TRNCH FIELD 650V 70A TO247N
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
***ical
Trans IGBT Chip N-CH 650V 80A 375000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 650V, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 375W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pin
***ical
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
***nell
IGBT, SINGLE, 650V, 80A, TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.6V; Power Dissipation Pd: 283W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins:
***ical
Trans IGBT Chip N-CH 650V 80A 283000mW 3-Pin(3+Tab) TO-247 Tube
***icroelectronics
Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247
***ark
Transistor, Igbt, 650V, 80A, To-247 Rohs Compliant: Yes
*** Electronic Components
IGBT Transistors 650V 40A Trench Gate Field-Stop IGBT
***(Formerly Allied Electronics)
IGBT N-Ch 650V 40A High-Speed TO247
***icroelectronics SCT
Short-circuit rugged IGBT, TO-247, Tube
*** Services
CoC and 2-years warranty / RFQ for pricing
***id Electronics
ST MICROELECTRONICS STGW40H65FB
***ical
Trans IGBT Chip N=-CH 650V 80A 305000mW 3-Pin(3+Tab) TO-247 Tube
*** Source Electronics
650V DuoPack IGBT and Diode High speed switching series fifth generation
***ineon SCT
650 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***nell
IGBT, 650V, 50A, TO247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 305W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-247; No. of Pins: 3Pins;
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Co-packed with Infineons new Rapid Si-diode technology; Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
***ure Electronics
NGTB Series 650 V 60 A Flange Mount Trench Field Stop IGBT - TO-247
***et
Trans IGBT Chip N-CH 650V 60A 3-Pin TO-247 Tube
***emi
IGBT, 650V 30A FS2 Induction Heating
***ark
650V/30A FAST IGBT FSII TO-247 / TUBE ROHS COMPLIANT: YES
***r Electronics
Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel
***i-Key
IGBT TRENCH/FS 650V 60A TO247-3
***ical
Trans IGBT Chip N-CH 650V 74A 255000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, 650V, 40A, TO220-3; DC Collector Current: 40A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 255W; Collector Emitter Voltage V(br)ceo: 650V; Transistor Case Style: TO-220; No. of Pins: 3Pins;
***ineon SCT
Infineon’s new TRENCHSTOP™5 IGBT technology redefines “Best-in-class” IGBT by providing unmatched performance in terms of efficiency for hard switching applications, PG-TO220-3, RoHS
***ineon
Infineons new TRENCHSTOP5 IGBT technology redefines Best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow. | Summary of Features: 650V breakthrough voltage; Compared to Infineons Best-in-class HighSpeed 3 family; Factor 2.5 lower Q g; Factor 2 reduction in switching losses; 200mV reduction in V CE(sat); Low C OES/E OSS; Mild positive temperature coefficient V CE(sat); Temperature stability of V f | Benefits: Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability; 50V increase in the bus voltage possible without compromising reliability; Higher power density design | Target Applications: Uninterruptible Power Supplies; Welding
Field Stop Trench IGBTs
ROHM Field Stop Trench IGBTs are energy saving high-efficiency IGBTs used in a wide range of high-voltage and high-current applications. These IGBTs feature a low collector and emitter saturation voltage, short-circuit withstand time, and built-in very fast & soft recovery FRD. The field stop trench IGBTs are ideal for UPS, power conditioner, welder, and general inverters for industrial use.
Parte # Mfg. Descripción Valores Precio
RGTH80TS65DGC11
DISTI # RGTH80TS65DGC11-ND		ROHM SemiconductorIGBT 650V 70A 234W TO-247N
RoHS: Compliant
Min Qty: 1
Container: Tube		Temporarily Out of Stock
  • 2520:$1.9320
  • 510:$2.2908
  • 120:$2.6910
  • 30:$3.1050
  • 10:$3.2840
  • 1:$3.6600
RGTH80TS65DGC11
DISTI # RGTH80TS65DGC11		ROHM SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247N Tube (Alt: RGTH80TS65DGC11)
RoHS: Compliant
Min Qty: 1
Container: Tube		Europe - 0
  • 1000:€1.8900
  • 500:€1.9900
  • 100:€2.0900
  • 50:€2.1900
  • 25:€2.2900
  • 10:€2.3900
  • 1:€2.5900
RGTH80TS65DGC11
DISTI # RGTH80TS65DGC11		ROHM SemiconductorTrans IGBT Chip N-CH 650V 70A 3-Pin TO-247N Tube - Rail/Tube (Alt: RGTH80TS65DGC11)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$1.6900
  • 2700:$1.7900
  • 1800:$1.8900
  • 900:$1.9900
  • 450:$2.0900
RGTH80TS65DGC11
DISTI # 755-RGTH80TS65DGC11		ROHM SemiconductorIGBT Transistors 650V 40A IGBT Stop Trench
RoHS: Compliant		302
  • 1:$3.6600
  • 10:$3.1100
  • 100:$2.7000
  • 250:$2.5600
  • 500:$2.3000
  • 1000:$1.9400
  • 2500:$1.8400
RGTH80TS65DGC11ROHM Semiconductor*** FREE SHIPPING ORDERS OVER $100 ***340
  • 265:$3.3825
  • 62:$3.7925
  • 1:$6.1500
RGTH80TS65DGC11
DISTI # 1501500		ROHM SemiconductorIGBT N-CHANNEL 70A 650V TRENCH TO-247, PK20
  • 500:£1.9280
  • 250:£2.0420
  • 100:£2.1820
  • 25:£2.4940
  • 5:£2.8360
RGTH80TS65DGC11  554
    RGTH80TS65DGC11
    DISTI # 2519798    		ROHM SemiconductorIGBT, SINGLE, 650V, 70A, TO-247N-3
    RoHS: Compliant    		0
    • 270:$3.8800
    • 120:$4.0800
    • 30:$4.7200
    • 10:$4.9800
    • 1:$5.5500
    RGTH80TS65DGC11
    DISTI # 2519798    		ROHM SemiconductorIGBT, SINGLE, 650V, 70A, TO-247N-3
    RoHS: Compliant    		0
    • 500:£1.6200
    • 250:£1.8000
    • 100:£1.8900
    • 10:£2.1900
    • 1:£2.8800
    RGTH80TS65DGC11ROHM Semiconductor 4530
    • 1:¥46.2566
    • 100:¥26.2275
    • 450:¥16.6282
    RGTH80TS65DGC11ROHM SemiconductorIGBT Transistors 650V 40A IGBT Stop Trench
    RoHS: Compliant    		Americas -
      RGTH80TS65DGC11ROHM SemiconductorRoHS(ship within 1day)425
      • 1:$4.0300
      • 10:$3.0200
      • 50:$2.6600
      • 100:$2.2800
      • 500:$2.1200
      • 1000:$2.0500
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      		 Gate Drivers 1 CURRENT LIMIT PRGM SHUTDOWN ERROR PIN
      Disponibilidad
      Valores:
      288
      En orden:
      2271
      Ingrese la cantidad:
      El precio actual de RGTH80TS65DGC11 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      3,66 US$
      3,66 US$
      10
      3,11 US$
      31,10 US$
      100
      2,70 US$
      270,00 US$
      250
      2,56 US$
      640,00 US$
      500
      2,30 US$
      1 150,00 US$
      1000
      1,94 US$
      1 940,00 US$
      2500
      1,84 US$
      4 600,00 US$
      5000
      1,77 US$
      8 850,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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