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IPB120N06S402ATMA2

IPB120N06S402ATMA2
Mfr. #:
IPB120N06S402ATMA2
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET N-Ch 60V 120A D2PAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB120N06S402ATMA2 Ficha de datos
Entrega:
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Pago:
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ECAD Model:
Más información:
IPB120N06S402ATMA2 más información
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
IPB120N06
embalaje
Carrete
Alias ​​de parte
IPB120N06S4-02 IPB120N06S402XT SP001028776
Unidad de peso
0.068654 oz
Paquete-Estuche
TO-263-3
Tecnología
Si
Número de canales
1 Channel
Tipo transistor
1 N-Channel
Id-corriente-de-drenaje-continua
120 A
Vds-Drain-Source-Breakdown-Voltage
60 V
Resistencia a la fuente de desagüe de Rds
2.4 mOhms
Polaridad del transistor
Canal N
Tags
IPB120N06S40, IPB120N06S, IPB120N06, IPB120N0, IPB120N, IPB120, IPB12, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
Parte # Mfg. Descripción Valores Precio
IPB120N06S402ATMA2
DISTI # IPB120N06S402ATMA2-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.6945
IPB120N06S402ATMA2
DISTI # IPB120N06S402ATMA2		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N06S402ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.4900
  • 2000:$1.4900
  • 4000:$1.3900
  • 6000:$1.3900
  • 10000:$1.2900
IPB120N06S402ATMA2
DISTI # SP001028776		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP001028776)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€1.7900
  • 2000:€1.4900
  • 4000:€1.3900
  • 6000:€1.2900
  • 10000:€1.1900
IPB120N06S402ATMA2
DISTI # 726-IPB120N06S402ATM		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2
RoHS: Compliant		1000
  • 1:$2.9200
  • 10:$2.4800
  • 100:$2.1500
  • 250:$2.0400
  • 500:$1.8300
  • 1000:$1.5500
IPB120N06S4-02
DISTI # 726-IPB120N06S4-02		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2
RoHS: Compliant		0
    IPB120N06S402ATMA2
    DISTI # 8269235P    		Infineon Technologies AGMOSFET N-CH 120A 60V OPTIMOS-T2 TO263, RL970
    • 100:£1.4810
    • 200:£1.3680
    Imagen Parte # Descripción
    IPB120N06S4H1ATMA2

    Mfr.#: IPB120N06S4H1ATMA2

    OMO.#: OMO-IPB120N06S4H1ATMA2

    		 MOSFET N-Ch 60V 120A D2PAK-2
    IPB120N06S403ATMA2

    Mfr.#: IPB120N06S403ATMA2

    OMO.#: OMO-IPB120N06S403ATMA2

    		 MOSFET N-Ch 60V 120A D2PAK-2
    IPB120N06S402ATMA2

    Mfr.#: IPB120N06S402ATMA2

    OMO.#: OMO-IPB120N06S402ATMA2

    		 MOSFET N-Ch 60V 120A D2PAK-2
    IPB120N06S403ATMA1

    Mfr.#: IPB120N06S403ATMA1

    OMO.#: OMO-IPB120N06S403ATMA1

    		 MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2
    IPB120N06N G

    Mfr.#: IPB120N06N G

    OMO.#: OMO-IPB120N06N-G

    		 MOSFET N-Ch 60V 75A D2PAK-2
    IPB120N06NG

    Mfr.#: IPB120N06NG

    OMO.#: OMO-IPB120N06NG-1190

    		 Nuevo y original
    IPB120N06NGINTR-ND

    Mfr.#: IPB120N06NGINTR-ND

    OMO.#: OMO-IPB120N06NGINTR-ND-1190

    		 Nuevo y original
    IPB120N06S402ATMA1

    Mfr.#: IPB120N06S402ATMA1

    OMO.#: OMO-IPB120N06S402ATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 120A TO263-3
    IPB120N06S4-02

    Mfr.#: IPB120N06S4-02

    OMO.#: OMO-IPB120N06S4-02-124

    		 Darlington Transistors MOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2
    IPB120N06S403ATMA2

    Mfr.#: IPB120N06S403ATMA2

    OMO.#: OMO-IPB120N06S403ATMA2-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 60V 120A TO263-3
    Disponibilidad
    Valores:
    Available
    En orden:
    4000
    Ingrese la cantidad:
    El precio actual de IPB120N06S402ATMA2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    1,94 US$
    1,94 US$
    10
    1,84 US$
    18,38 US$
    100
    1,74 US$
    174,15 US$
    500
    1,64 US$
    822,40 US$
    1000
    1,55 US$
    1 548,00 US$
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