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IPB120N06S402ATMA2

IPB120N06S402ATMA2
Mfr. #:
IPB120N06S402ATMA2
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-Ch 60V 120A D2PAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB120N06S402ATMA2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IPB120N06S402ATMA2 DatasheetIPB120N06S402ATMA2 Datasheet (P4-P6)IPB120N06S402ATMA2 Datasheet (P7-P9)
ECAD Model:
Más información:
IPB120N06S402ATMA2 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
120 A
Rds On - Resistencia de la fuente de drenaje:
2.4 mOhms
Configuración:
Único
Calificación:
AEC-Q101
Embalaje:
Carrete
Altura:
4.4 mm
Longitud:
10 mm
Serie:
IPB120N06
Tipo de transistor:
1 N-Channel
Ancho:
9.25 mm
Marca:
Infineon Technologies
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Parte # Alias:
IPB120N06S4-02 IPB12N6S42XT SP001028776
Unidad de peso:
0.068654 oz
Tags
IPB120N06S40, IPB120N06S, IPB120N06, IPB120N0, IPB120N, IPB120, IPB12, IPB1, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ineon SCT
60V, N-Ch, 2.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***ical
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***et
Trans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R
***el Electronic
MOSFET N-CH 60V 120A TO263-3
***et
Trans MOSFET N-CH 60V 120A 3-Pin(2+Tab) TO-263
***ponent Stockers USA
120 A 60 V 0.0021 ohm N-CHANNEL Si POWER MOSFET TO-263AB
***hard Electronics
Power Field-Effect Transistor, 120A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
***hard Electronics
VISHAY SQM120N06-3M5L-GE3 MOSFET Transistor, N Channel, 120 A, 60 V, 0.0028 ohm, 10 V, 2 V
***roFlash
SQM120N06-3m5LGE3 N-channel MOSFET Transistor, 120 A, 60 V, 2+Tab-Pin TO-263
***ical
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK
***nell
MOSFET, N-CH, 60V, 120A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0028ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V; Power Dissipation Pd:375W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263; No. of Pins:3; MSL:MSL 1 - Unlimited
***ineon SCT
60V, N-Ch, 3.4 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
***ical
Trans MOSFET N-CH 60V 90A Automotive 3-Pin(2+Tab) D2PAK T/R
***ure Electronics
N-Channel 60 V 3.4 mOhm 170 nC OptiMOS®-T2 Power-Transistor -PG-TO263-3-2
***ark
Channel Type:n Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:90A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; Power Dissipation:150W; No. Of Pins:3Pins Rohs Compliant: Yes
***ineon
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
***ure Electronics
N-Channel 60 V 2.1 mOhm 375 W SMT TrenchFET Power Mosfet - TO-263
***ark
Mosfet, N-Ch, 60V, 120A, To-263 Rohs Compliant: Yes
*** Americas
N-CHANNEL 60-V (D-S) MOSFET
***emi
N-Channel PowerTrench® MOSFET, 60 V, 110 A, 2.7 mΩ
***ow.cn
Trans MOSFET N-CH 60V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
*** Stop Electro
Power Field-Effect Transistor, 110A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ark
MOSFET, N-CH, 60V, 210A, D2PAK; Transistor Polarity:N Channel; Continuous Drain
***ical
Trans MOSFET N-CH Si 60V 210A Automotive 3-Pin(2+Tab) D2PAK T/R
***ernational Rectifier
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak Package
***ineon SCT
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area, D2PAK-3, RoHS
***ineon
Benefits: Advanced Process Technology; Ultra Low On-Resistance; Enhanced dV/dT and dI/dT capability; 175C Operating Temperature; Fast Switching; Repetitive Avalanche Allowed up to Tjmax; Lead-Free, RoHS Compliant; Automotive Qualified
***nell
MOSFET, N-CH, 60V, 210A, D2PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0024ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-263AB; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-55°C to +175°C
***ical
Trans MOSFET N-CH 60V 110A Automotive 3-Pin(2+Tab) D2PAK T/R
***emi
N-Channel PowerTrench® MOSFET, 60V, 110A, 1.8mΩ
***r Electronics
Power Field-Effect Transistor, 110A I(D), 60V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
N-Channel OptiMOS™ Power MOSFETs
Infineon N-Channel OptiMOS™ Power MOSFETs are class leading power MOSFETs for highest power density and energy efficient solutions. Ultra low gate and output charges together with lowest on state resistance in small footprint packages make ideal choices for the demanding requirements of voltage regulator solutions in servers, datacom, and telecom applications. Super fast switching Control FETs together with low EMI Sync FETs provide solutions that are easy to design in. Infineon N-Channel OptiMOS™ Power MOSFETs provide excellent gate charge and are optimized for DC-DC conversion.
Parte # Mfg. Descripción Valores Precio
IPB120N06S402ATMA2
DISTI # IPB120N06S402ATMA2-ND		Infineon Technologies AGMOSFET N-CH 60V 120A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 1000:$1.6945
IPB120N06S402ATMA2
DISTI # IPB120N06S402ATMA2		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB120N06S402ATMA2)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$1.4900
  • 2000:$1.4900
  • 4000:$1.3900
  • 6000:$1.3900
  • 10000:$1.2900
IPB120N06S402ATMA2
DISTI # SP001028776		Infineon Technologies AGTrans MOSFET N-CH 60V 120A 3-Pin TO-263 T/R (Alt: SP001028776)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 1000:€1.7900
  • 2000:€1.4900
  • 4000:€1.3900
  • 6000:€1.2900
  • 10000:€1.1900
IPB120N06S402ATMA2
DISTI # 726-IPB120N06S402ATM		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2
RoHS: Compliant		1000
  • 1:$2.9200
  • 10:$2.4800
  • 100:$2.1500
  • 250:$2.0400
  • 500:$1.8300
  • 1000:$1.5500
IPB120N06S4-02
DISTI # 726-IPB120N06S4-02		Infineon Technologies AGMOSFET N-Ch 60V 120A D2PAK-2 OptiMOS-T2
RoHS: Compliant		0
    IPB120N06S402ATMA2
    DISTI # 8269235P    		Infineon Technologies AGMOSFET N-CH 120A 60V OPTIMOS-T2 TO263, RL970
    • 100:£1.4810
    • 200:£1.3680
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    Disponibilidad
    Valores:
    373
    En orden:
    2356
    Ingrese la cantidad:
    El precio actual de IPB120N06S402ATMA2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,91 US$
    2,91 US$
    10
    2,47 US$
    24,70 US$
    100
    2,14 US$
    214,00 US$
    250
    2,03 US$
    507,50 US$
    500
    1,82 US$
    910,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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