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IKW25T120FKSA1

IKW25T120FKSA1
Mfr. #:
IKW25T120FKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT Transistors LOW LOSS DuoPack 1200V 25A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IKW25T120FKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
Transistores IGBT
RoHS:
Y
Tecnología:
Si
Paquete / Caja:
TO-247-3
Estilo de montaje:
A través del orificio
Configuración:
Único
Voltaje colector-emisor VCEO Max:
1200 V
Voltaje de saturación colector-emisor:
1.7 V
Voltaje máximo del emisor de puerta:
20 V
Corriente continua del colector a 25 C:
50 A
Pd - Disipación de energía:
190 W
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 150 C
Serie:
TRENCHSTOP IGBT
Embalaje:
Tubo
Marca:
Infineon Technologies
Corriente de fuga puerta-emisor:
600 nA
Tipo de producto:
Transistores IGBT
Cantidad de paquete de fábrica:
240
Subcategoría:
IGBT
Nombre comercial:
TRENCHSTOP
Parte # Alias:
IKW25T120 IKW25T12XK SP000013939
Unidad de peso:
0.172842 oz
Tags
IKW25T, IKW25, IKW2, IKW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
*** Source Electronics
Trans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube / IGBT 1200V 50A 190W TO247-3
***ure Electronics
IKW25T120FKSA1 Series 1200 V 50 A 190 W IGBT in TrenchStop - PG-TO247-3-1
***ource
IGBT with Anti-Parallel Diode; Package: PG-TO247-3; Switching Frequency: TRENCHSTOP™ 2-20kHz; Package: TO-247; VCE max: 1,200.0 V; ICmax @ 25°: 50.0 A; ICmax @ 100°: 25.0 A
***ment14 APAC
IGBT, N, 1200V, 25A, TO-247; Transistor Type:IGBT; DC Collector Current:50A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:190W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:25A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:190W; Power Dissipation Pd:190W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV
***ineon
Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications
***ark
Igbt Single Transistor, 50 A, 2 V, 385 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes
***ical
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
***nell
IGBT, SINGLE, 1.2KV, 50A, TO-247-3; DC Collector Current: 50A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 385W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (27-Jun-2018)
***ical
Trans IGBT Chip N-CH 1200V 60A 220000mW 3-Pin(3+Tab) TO-247 Tube
***Parts
IGBTs - Single, Transistors N-Channel, TO-247-3 60A 1200V 220W Through Hole
***ure Electronics
N-Channel 1200 V 30 A Very Fast PowerMESH IGBT - TO-247
***nell
IGBT, N 1200V 30A TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.75V; Power Dissipation Pd: 220W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins
***et
Trans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-3P(N) Tube
***r Electronics
Insulated Gate Bipolar Transistor, 50A I(C), 1200V V(BR)CES, N-Channel, TO-247AB
***emi
IGBT, 1200V, 25A, Field Stop Trench
***ark
Fs1Tigbt To247 25A 1200V Rohs Compliant: Yes
***rchild Semiconductor
Using advanced field stop trench IGBT technology, Fairchild’s 1200V trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.
***ical
Trans IGBT Chip N-CH 1200V 50A 326000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***Parts
IGBTs - Single, Transistors N-Channel, PG-TO247-3 50A 1200V 326W Through Hole
***ure Electronics
IKW25N120H3 Series 1200 V 25 A Through Hole TRENCHSTOP™ IGBT -PG-TO247-3
***ineon SCT
1200 V IGBT with anti-parallel diode in TO-247 package, PG-TO247-3, RoHS
***ark
Continuous Collector Current:25A; Collector Emitter Saturation Voltage:2.4V; Power Dissipation:326W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C; Transistor Mounting:Through Hole; Msl:- Rohs Compliant: Yes |Infineon IKW25N120H3FKSA1.
***nell
IGBT+ DIODE,1200V,25A,TO247; Transistor Type:IGBT; DC Collector Current:25A; Collector Emitter Voltage Vces:2.4V; Power Dissipation Pd:326W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Power Dissipation Max:326W
***ineon
Infineons high speed devices are used to reduce the size of the active components (25kHz --> 70kHz). Infineons HighSpeed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-off switching behavior, leading to low turn off losses. Furthermore, up to 15% efficiency improvement can be achieved by implementing this technology in your design. | Summary of Features: Designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz; Low switching losses for high efficiency; Excellent V ce(sat) behavior thanks to the famous Infineon TRENCHSTOP technology; Fast switching behavior with low EMI emissions; Optimized diode for target applications, meaning further improvement in switching losses; Low gate resistor selection possible (down to 5) whilst maintaining excellent switching behaviour; Short circuit capability; Offering T j(max) of 175C; Packaged with and without freewheeling diode for increased design freedom | Benefits: Excellent cost/performance; Low switching and conduction losses; Very good EMI behavior; A small gate resistor for reduced delay time and voltage overshoot; Smaller die sizes -> smaller packages; Best-in-class IGBT efficiency and EMI behavior | Target Applications: Welding inverters; Solar inverters; UPS; All hard switching applications
***ical
Trans IGBT Chip N-CH 1.2KV 60A 3-Pin(3+Tab) TO-247 Tube
*** Electronics
IGBT Transistors 1200V/30A FAST IGBT FSII
***nell
TRANSISTOR, IGBT, 2V, 60A, TO-247-3;
***i-Key
IGBT TRENCH/FS 1200V 60A TO247
*** Stop Electro
Insulated Gate Bipolar Transistor
***ark
Igbt, Single, 1.2Kv, 60A, To-247; Dc Collector Current:60A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:452W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Onsemi NGTB30N120FL2WG
***omponent
Trans IGBT Chip N-CH 1.2KV 20A 3-Pin TO-247 Tube (Alt: SP001150026)
***ark
Igbt, Single, 1.2Kv, 40A, To-247; Dc Collector Current:40A; Collector Emitter Saturation Voltage Vce(On):1.55V; Power Dissipation Pd:288W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:To-247; No. Of Pins:3Pins; Rohs Compliant: Yes |Infineon IHW20N120R5XKSA1
***ineon SCT
The 5th generation of reverse conducting 1200 V, 20 A TRENCHSTOP™ 5 IGBTs with monolithically integrated reverse conducting diode in a TO247 package has been optimized for the demanding requirements of Induction Cooking applications, PG-TO247-3, RoHS
***ineon
The latest generation of reverse conducting IGBTs has been optimized for the demanding requirements of Induction Cooking applications. The new 20A RC-H5 devices complement the previous generation of reverse conduction IGBTs and extend the performance leadership of the RC-H family, focusing on system efficiency and reliability. | Summary of Features: Switching losses reduced by 30%; Very low conduction losses; Reduced turn-on current spike up to 10%; T j(max) = 175C; Soft current turn-off waveforms for low EMI | Benefits: Increased switching frequency; Lowest power dissipation; Better thermal management for higher reliability; Lower EMI filtering requirements; Reduced system costs; Highest reliability against peak current | Target Applications: Induction cooking stoves; Inverterized microwave ovens; Induction rice cookers; Induction water heaters; Other resonant switching topologies
Parte # Mfg. Descripción Valores Precio
IKW25T120FKSA1
DISTI # V99:2348_06377412		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		115
  • 500:$4.1240
  • 250:$4.6910
  • 100:$4.7900
  • 50:$5.4890
  • 25:$5.7350
  • 10:$6.0110
  • 1:$7.3018
IKW25T120FKSA1
DISTI # V36:1790_06377412		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		0
  • 240000:$3.2800
  • 120000:$3.2850
  • 24000:$3.9910
  • 2400:$5.4530
  • 240:$5.7100
IKW25T120FKSA1
DISTI # IKW25T120FKSA1-ND		Infineon Technologies AGIGBT 1200V 50A 190W TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		119In Stock
  • 720:$4.5824
  • 240:$5.2624
  • 25:$6.0604
  • 10:$6.3560
  • 1:$7.0400
IKW25T120FKSA1
DISTI # 29065462		Infineon Technologies AGTrans IGBT Chip N-CH 1200V 50A 190000mW 3-Pin(3+Tab) TO-247 Tube
RoHS: Compliant		115
  • 2:$7.3018
IKW25T120XK
DISTI # IKW25T120FKSA1		Infineon Technologies AGTrans IGBT Chip N-CH 1.2KV 50A 3-Pin(3+Tab) TO-247 - Rail/Tube (Alt: IKW25T120FKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$2.9464
  • 1440:$2.9997
  • 960:$3.1042
  • 480:$3.2206
  • 240:$3.3412
IKW25T120FKSA1
DISTI # 61M6733		Infineon Technologies AGIGBT, 1.2KV, 50A, TO-247,DC Collector Current:50A,Collector Emitter Saturation Voltage Vce(on):1.7V,Power Dissipation Pd:190W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes1829
  • 500:$4.4000
  • 250:$4.8300
  • 100:$5.0600
  • 50:$5.4400
  • 25:$5.8300
  • 10:$6.1100
  • 1:$6.7600
IKW25T120
DISTI # 726-IKW25T120		Infineon Technologies AGIGBT Transistors LOW LOSS DuoPack 1200V 25A
RoHS: Compliant		584
  • 1:$6.6900
  • 10:$6.0500
  • 25:$5.7700
  • 100:$5.0100
  • 250:$4.7800
  • 500:$4.3600
IKW25T120FKSA1
DISTI # 726-IKW25T120FKSA1		Infineon Technologies AGIGBT Transistors LOW LOSS DuoPack 1200V 25A
RoHS: Compliant		372
  • 1:$6.6900
  • 10:$6.0500
  • 25:$5.7700
  • 100:$5.0100
  • 250:$4.7800
  • 500:$4.3600
IKW25T120FKSA1
DISTI # 9140220		Infineon Technologies AGIGBT TRENCHSTOP NCHANNEL 1200V 25A TO247, PK33
  • 300:£3.5830
  • 150:£3.7970
  • 60:£4.0600
  • 15:£4.6370
  • 3:£5.2700
IKW25T120FKSA1
DISTI # 9140220P		Infineon Technologies AGIGBT TRENCHSTOP NCHANNEL 1200V 25A TO247, TU87
  • 300:£3.5830
  • 150:£3.7970
  • 60:£4.0600
  • 15:£4.6370
IKW25T120FKSA1
DISTI # IKW25T120		Infineon Technologies AG1200V 50A 190W TO247
RoHS: Compliant		457
  • 1:€3.9000
  • 10:€2.9000
  • 50:€2.7000
  • 100:€2.6000
IKW25T120FKSA1
DISTI # 1471747		Infineon Technologies AGIGBT, N, 1200V, 25A, TO-247
RoHS: Compliant		1829
  • 500:$6.5700
  • 250:$7.2000
  • 100:$7.5500
  • 25:$8.7000
  • 10:$9.1200
  • 1:$10.0800
IKW25T120FKSA1
DISTI # 1471747		Infineon Technologies AGIGBT, N, 1200V, 25A, TO-2471916
  • 500:£3.4000
  • 250:£3.7100
  • 100:£3.9100
  • 10:£4.4900
  • 1:£5.7100
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Disponibilidad
Valores:
372
En orden:
2355
Ingrese la cantidad:
El precio actual de IKW25T120FKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,69 US$
6,69 US$
10
6,05 US$
60,50 US$
25
5,77 US$
144,25 US$
100
5,01 US$
501,00 US$
250
4,78 US$
1 195,00 US$
500
4,36 US$
2 180,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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