FDP054N10

Mfr. #:: FDP054N10
Fabricante:: ON Semiconductor
Descripción:: Darlington Transistors MOSFET 100V N-Chan PowerTrench MOSFET
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: FDP054N10 Ficha de datos
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Atributo del producto
Valor de atributo

Fabricante: Fairchild Semiconductor

categoria de producto: FET - Single

Serie: PowerTrenchR

embalaje: Tubo

Unidad de peso: 0.085398 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: TO-220-3 Formed Leads

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 175°C (TJ)

Tipo de montaje: A través del orificio

Número de canales: 1 Channel

Paquete de dispositivo de proveedor: TO-220-3

Tipo FET: Canal N MOSFET, óxido metálico

Potencia máxima: 263W

Tipo transistor: 1 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 100V

Entrada-Capacitancia-Ciss-Vds: 13280pF @ 25V

Función FET: Estándar

Corriente-Continuo-Drenaje-Id-25 ° C: 120A (Tc)

Rds-On-Max-Id-Vgs: 5.5 mOhm @ 75A, 10V

Vgs-th-Max-Id: 4.5V @ 250μA

Puerta-Carga-Qg-Vgs: 203nC @ 10V

Disipación de potencia Pd: 263 W

Temperatura máxima de funcionamiento: + 175 C

Temperatura mínima de funcionamiento: - 55 C

Otoño: 39 ns

Hora de levantarse: 92 ns

Vgs-Puerta-Fuente-Voltaje: 20 V

Id-corriente-de-drenaje-continua: 144 A

Vds-Drain-Source-Breakdown-Voltage: 100 V

Resistencia a la fuente de desagüe de Rds: 5.5 mOhms

Polaridad del transistor: Canal N

Tiempo de retardo de apagado típico: 80 ns

Tiempo de retardo de encendido típico: 44 ns

Qg-Gate-Charge: 156 nC

Transconductancia directa-Mín.: 192 S

Tags: FDP05, FDP0, FDP

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FDP054N10 Descripción

***Components: N-Channel MOSFET, 144 A, 100 V, 3-Pin TO-220 ON Semiconductor FDP054N10

***ure Electronics: N-Channel 100 V 5.5 mO 203 nC Flange Mount PowerTrench® Mosfet - TO-220AB

***ical: Trans MOSFET N-CH 100V 144A 3-Pin(3+Tab) TO-220 T/R

***Semiconductor: N-Channel PowerTrench® MOSFET 100V, 144A, 5.5mΩ

***i-Key: MOSFET N-CH 100V TO-220AB-3

***rchild Semiconductor: This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

***ark: MOSFET, N CH, 100V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3.5V ;RoHS Compliant: Yes

***nell: MOSFET, N CH, 100V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:263W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; Pulse Current Idm:576A

***ment14 APAC: MOSFET, N CH, 100V, 120A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0046ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.5V; Power Dissipation Pd:263W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220; No. of Pins:3; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012); Pulse Current Idm:576A

Market price

Parte #	Mfg.	Descripción	Valores	Precio
FDP054N10 DISTI # FDP054N10-ND	ON Semiconductor	MOSFET N-CH 100V TO-220AB-3 RoHS: Compliant Min Qty: 1 Container: Tube	1251In Stock	1000:$2.0482 500:$2.4286 100:$2.9992 10:$3.6580 1:$4.1000
FDP054N10 DISTI # FDP054N10	ON Semiconductor	Trans MOSFET N-CH 100V 144A 3-Pin(3+Tab) TO-220 T/R (Alt: FDP054N10) RoHS: Compliant Min Qty: 1 Container: Tape and Reel	Europe - 0	1:€2.0900 10:€1.8900 25:€1.7900 50:€1.6900 100:€1.6900 500:€1.5900 1000:€1.4900
FDP054N10 DISTI # FDP054N10	ON Semiconductor	Trans MOSFET N-CH 100V 144A 3-Pin(3+Tab) TO-220 T/R - Rail/Tube (Alt: FDP054N10) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$1.6900 2000:$1.6900 4000:$1.6900 6000:$1.5900 10000:$1.5900
FDP054N10	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 120A I(D), 100V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	120370	1000:$2.1800 500:$2.2900 100:$2.3900 25:$2.4900 1:$2.6800
FDP054N10 DISTI # 512-FDP054N10	ON Semiconductor	MOSFET 100V N-Chan PowerTrench MOSFET RoHS: Compliant	766	1:$3.5300 10:$3.0000 100:$2.6000 250:$2.4700 500:$2.2100 1000:$1.8700 2000:$1.7700
FDP054N10 DISTI # 7599661P	ON Semiconductor	MOSFET N-CHANNEL 100V 144A TO220, TU	193	10:£2.0100
FDP054N10	ON Semiconductor	INSTOCK	6297

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Disponibilidad

Valores:: Available
En orden:: 1500
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El precio actual de FDP054N10 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~2,38 US$~~; ~~2,38 US$~~

10: ~~2,27 US$~~; ~~22,66 US$~~

100: ~~2,15 US$~~; ~~214,65 US$~~

500: ~~2,03 US$~~; ~~1 013,65 US$~~

1000: ~~1,91 US$~~; ~~1 908,00 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

Empezar con

FDP05 9
FDP0 104
FDP 605

FDP054N10

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes