OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

FDP050AN06A0

FDP050AN06A0
Mfr. #:
FDP050AN06A0
Fabricante:
ON Semiconductor / Fairchild
Descripción:
MOSFET N-Channel PowerTrench
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDP050AN06A0 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
FDP050AN06A0 más información
Atributo del producto
Valor de atributo
Fabricante:
EN Semiconductor
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
60 V
Id - Corriente de drenaje continua:
80 A
Rds On - Resistencia de la fuente de drenaje:
5 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
245 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
PowerTrench
Embalaje:
Tubo
Altura:
16.3 mm
Longitud:
10.67 mm
Serie:
FDP050AN06A0
Tipo de transistor:
1 N-Channel
Escribe:
MOSFET
Ancho:
4.7 mm
Marca:
ON Semiconductor / Fairchild
Otoño:
29 ns
Tipo de producto:
MOSFET
Hora de levantarse:
160 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
28 ns
Tiempo típico de retardo de encendido:
16 ns
Parte # Alias:
FDP050AN06A0_NL
Unidad de peso:
0.063493 oz
Tags
FDP050, FDP05, FDP0, FDP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    E**r
    E**r
    RU

    It is not a real 2SK117.Drain current should not exceed 14mA (usually about 10mA), but the real measured values are more than a 20mA. So they are much more worse than a genuine.Refund received.

    2019-06-23
    Y***a
    Y***a
    RU

    Ok

    2019-06-05
***el Electronic
Transistor: N-MOSFET; unipolar; 60V; 18A; 245W; TO220; PowerTrench®
***emi
N-Channel PowerTrench® MOSFET 60V, 80A, 5mΩ
***Yang
Trans MOSFET N-CH 60V 18A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***ure Electronics
FDP050AN06A0 Series 60 V 80 A 5 mOhm N-Channel PowerTrench Mosfet - TO-220-3
***nell
MOSFET, N CH, 60V, 18A, TO-220AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0043ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; P
***r Electronics
Power Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 84A;TO-220AB;PD 200W;gFS 69S
***ure Electronics
Single N-Channel 60 V 12 mOhm 130 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 60V 84A 3-Pin(3+Tab) TO-220AB Tube
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:84A; On Resistance, Rds(on):12mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 84 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) mOhm = 12 / Gate-Source Voltage V = 20 / Fall Time ns = 53 / Rise Time ns = 78 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 200
***ment14 APAC
MOSFET, N, 60V, 81A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:81A; Drain Source Voltage Vds:60V; On Resistance Rds(on):12mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:170W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:84A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.9°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:12mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:170W; Power Dissipation Pd:170W; Pulse Current Idm:330A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***ineon SCT
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***ure Electronics
Single N-Channel 55 V 4.9 mOhm 120 nC HEXFET® Power Mosfet - TO-220-3
***p One Stop
Trans MOSFET N-CH Si 55V 150A 3-Pin(3+Tab) TO-220AB Tube
***ineon
Benefits: RoHS Compliant; Industry-leading quality; Fast Switching; 175C Operating Temperature | Target Applications: AC-DC
***ment14 APAC
MOSFET, N, 55V, 150A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:150A; Drain Source Voltage Vds:55V; On Resistance Rds(on):4.9mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:230W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.65°C/W; On State resistance @ Vgs = 10V:4.9ohm; Package / Case:TO-220AB; Power Dissipation Pd:230W; Power Dissipation Pd:230W; Pulse Current Idm:600A; Termination Type:Through Hole; Voltage Vds Typ:55V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 150 / Drain-Source Voltage (Vds) V = 55 / ON Resistance (Rds(on)) mOhm = 4.9 / Gate-Source Voltage V = 20 / Fall Time ns = 82 / Rise Time ns = 110 / Turn-OFF Delay Time ns = 48 / Turn-ON Delay Time ns = 18 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220 / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 230
***(Formerly Allied Electronics)
MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 13 Milliohms;ID 82A;TO-220AB;PD 230W;gFS 38S
***ure Electronics
Single N-Channel 75 V 13 mOhm 160 nC HEXFET® Power Mosfet - TO-220-3
***ineon SCT
75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS
***p One Stop
Trans MOSFET N-CH Si 80V 82A 3-Pin(3+Tab) TO-220AB Tube
*** Stop Electro
Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:75V; Continuous Drain Current, Id:82A; On Resistance, Rds(on):13mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220AB ;RoHS Compliant: Yes
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature | Target Applications: Consumer Full-Bridge; Full-Bridge; Push-Pull
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 82 / Drain-Source Voltage (Vds) V = 75 / ON Resistance (Rds(on)) mOhm = 13 / Gate-Source Voltage V = 20 / Fall Time ns = 48 / Rise Time ns = 64 / Turn-OFF Delay Time ns = 49 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 230
***ment14 APAC
MOSFET, N, 75V, 82A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:71A; Drain Source Voltage Vds:75V; On Resistance Rds(on):13mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:82A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:0.75°C/W; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:13mohm; Package / Case:TO-220AB; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:280A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V
***emi
Power MOSFET, N-Channel, QFET®, 60 V, 85 A, 10 mΩ, TO-220
***ure Electronics
N-Channel 60 V 10 mO 160 W Flange Mount Mosfet - TO-220
***et Europe
Trans MOSFET N-CH 60V 85A 3-Pin(3+Tab) TO-220AB Rail
***r Electronics
Power Field-Effect Transistor, 85A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:85A; On Resistance, Rds(on):0.01ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:4V ;RoHS Compliant: Yes
***nell
MOSFET, N, TO-220; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:60V; Current, Id Cont:85A; Resistance, Rds On:0.01ohm; Voltage, Vgs Rds on Measurement:10V; Voltage, Vgs th Typ:4V; Case Style:TO-220; Termination Type:Through Hole; Operating Temperature Range:-55°C to +175°C; Alternate Case Style:SOT-78B; Current, Idm Pulse:300A; Device Marking:FQP85N06; No. of Pins:3; Power Dissipation:160W; Power, Pd:160W; Resistance, Rds on Max:0.01ohm; Voltage, Vds Max:60V; Voltage, Vgs th Max:4V
***rchild Semiconductor
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
***emi
N-Channel PowerTrench® MOSFET 75V, 80A, 6mΩ
***ure Electronics
N-Channel 75 V 6 mOhm Power Trench Mosfet - TO-220
***Yang
Trans MOSFET N-CH 75V 16A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***inecomponents.com
TO220AB, SINGLE, NCH, 75V, 0.0063 OHM POWERTRENCH MOSFET
***enic
75V 16A 255W 6m´Î@10V80A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
***r Electronics
Power Field-Effect Transistor, 80A I(D), 75V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***eco
Transistor RFP70N06 N-Channel MOSFET 60 Volt 70 Amp TO-220AB
***ure Electronics
N-Channel 60 V 0.014 Ohm Flange Mount Power Mosfet - TO-220AB
***Yang
Trans MOSFET N-CH 60V 70A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube
***emi
N-Channel Power MOSFET 60V, 70A, 14mΩ
***r Electronics
Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
***rchild Semiconductor
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA78440.
***ment14 APAC
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:60V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Current Temperature:25°C; Device Marking:RFP70N06; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:14mohm; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
Parte # Mfg. Descripción Valores Precio
FDP050AN06A0
DISTI # 26637324		ON SemiconductorFET 60V 5.0 MOHM TO2201600
  • 800:$1.3840
FDP050AN06A0
DISTI # 24246661		ON SemiconductorFET 60V 5.0 MOHM TO2201167
  • 11:$0.9719
FDP050AN06A0
DISTI # FDP050AN06A0-ND		ON SemiconductorMOSFET N-CH 60V 80A TO-220AB
RoHS: Compliant
Min Qty: 1
Container: Bulk		1724In Stock
  • 1000:$1.2754
  • 500:$1.5393
  • 100:$1.8735
  • 10:$2.3310
  • 1:$2.5900
FDP050AN06A0
DISTI # V36:1790_06359183		ON SemiconductorFET 60V 5.0 MOHM TO2200
  • 800000:$1.0280
  • 400000:$1.0300
  • 80000:$1.1540
  • 8000:$1.3520
  • 800:$1.3840
FDP050AN06A0
DISTI # FDP050AN06A0		ON SemiconductorTrans MOSFET N-CH 60V 18A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FDP050AN06A0)
RoHS: Compliant
Min Qty: 50
Container: Tube		Americas - 2625
  • 500:$0.9649
  • 250:$0.9899
  • 150:$1.0029
  • 100:$1.0159
  • 50:$1.0219
FDP050AN06A0
DISTI # FDP050AN06A0		ON SemiconductorTrans MOSFET N-CH 60V 18A 3-Pin(3+Tab) TO-220AB Rail (Alt: FDP050AN06A0)
RoHS: Compliant
Min Qty: 1		Europe - 640
  • 1000:€0.9039
  • 500:€0.9379
  • 100:€0.9739
  • 50:€1.0129
  • 25:€1.0549
  • 10:€1.1509
  • 1:€1.2659
FDP050AN06A0
DISTI # FDP050AN06A0		ON SemiconductorTrans MOSFET N-CH 60V 18A 3-Pin(3+Tab) TO-220AB Rail - Bulk (Alt: FDP050AN06A0)
RoHS: Compliant
Min Qty: 256
Container: Bulk		Americas - 0
  • 256:$1.1900
  • 512:$1.1900
  • 768:$1.1900
  • 1280:$1.1900
  • 2560:$1.1900
FDP050AN06A0
DISTI # 31Y1384		ON SemiconductorMOSFET, N CH, 60V, 18A, TO-220AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:80A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0043ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,MSL:- RoHS Compliant: Yes673
  • 1000:$1.1200
  • 500:$1.2800
  • 100:$1.4600
  • 10:$1.8400
  • 1:$2.1600
FDP050AN06A0
DISTI # 512-FDP050AN06A0		ON SemiconductorMOSFET N-Channel PowerTrench
RoHS: Compliant		1343
  • 1:$2.1400
  • 10:$1.8200
  • 100:$1.4500
  • 500:$1.2700
  • 1000:$1.0600
FDP050AN06A0_Q
DISTI # 512-FDP050AN06A0_Q		ON SemiconductorMOSFET N-Channel PowerTrench
RoHS: Not compliant		0
    FDP050AN06A0Fairchild Semiconductor CorporationPower Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		26791
    • 1000:$1.2900
    • 500:$1.3600
    • 100:$1.4100
    • 25:$1.4700
    • 1:$1.5900
    FDP050AN06A0Fairchild Semiconductor Corporation 30
      FDP050AN06A0
      DISTI # FDP050AN06A0      		ON SemiconductorTransistor: N-MOSFET,unipolar,60V,18A,245W,TO220AB26
      • 100:$2.1200
      • 25:$2.3500
      • 5:$2.9300
      • 1:$3.4000
      FDP050AN06A0Fairchild Semiconductor CorporationPower Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
      RoHS: Compliant      		800
        FDP050AN06A0
        DISTI # 2454156        		ON SemiconductorMOSFET, N CH, 60V, 18A, TO-220AB-3
        RoHS: Compliant        		673
        • 500:$1.9500
        • 100:$2.2400
        • 10:$2.8000
        • 1:$3.2900
        FDP050AN06A0
        DISTI # 2454156        		ON SemiconductorMOSFET, N CH, 60V, 18A, TO-220AB-3873
        • 500:£0.9800
        • 250:£1.0500
        • 100:£1.1200
        • 10:£1.4200
        • 1:£1.8700
        Imagen Parte # Descripción
        TPS92611QDGNRQ1

        Mfr.#: TPS92611QDGNRQ1

        OMO.#: OMO-TPS92611QDGNRQ1

        		 LED Lighting Drivers LED DRIVER
        UCLAMP3301D.TCT

        Mfr.#: UCLAMP3301D.TCT

        OMO.#: OMO-UCLAMP3301D-TCT

        		 TVS Diodes / ESD Suppressors TVS 1-LINE UNI,15A(8/20)5.3V
        NSVR02100HT1G

        Mfr.#: NSVR02100HT1G

        OMO.#: OMO-NSVR02100HT1G

        		 Schottky Diodes & Rectifiers
        MC78M08CDTG

        Mfr.#: MC78M08CDTG

        OMO.#: OMO-MC78M08CDTG

        		 Linear Voltage Regulators 8V 500mA Positive
        TLV61046ADBVR

        Mfr.#: TLV61046ADBVR

        OMO.#: OMO-TLV61046ADBVR

        		 Switching Voltage Regulators TINY BOOST CONVERTER FOR PMOLED AND WLED
        DRV5032FADBZR

        Mfr.#: DRV5032FADBZR

        OMO.#: OMO-DRV5032FADBZR

        		 Board Mount Hall Effect / Magnetic Sensors Ultra-Low Power 1.65V to 5.5V Hall Effect Switch 3-SOT-23 -40 to 85
        784770330

        Mfr.#: 784770330

        OMO.#: OMO-784770330

        		 Fixed Inductors WE-PDA 1280 33uH 33uH 20% 3.4A 55mOhm
        TPS92611QDGNRQ1

        Mfr.#: TPS92611QDGNRQ1

        OMO.#: OMO-TPS92611QDGNRQ1-TEXAS-INSTRUMENTS

        		 Single Channel Linear LED Drive
        MC78M08CDTG

        Mfr.#: MC78M08CDTG

        OMO.#: OMO-MC78M08CDTG-ON-SEMICONDUCTOR

        		 Linear Voltage Regulators 8V 500mA Positive
        DRV5032FADBZR

        Mfr.#: DRV5032FADBZR

        OMO.#: OMO-DRV5032FADBZR-TEXAS-INSTRUMENTS

        		 LP HALL 32FADBZR
        Disponibilidad
        Valores:
        Available
        En orden:
        1984
        Ingrese la cantidad:
        El precio actual de FDP050AN06A0 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        2,46 US$
        2,46 US$
        10
        2,09 US$
        20,90 US$
        100
        1,67 US$
        167,00 US$
        500
        1,46 US$
        730,00 US$
        1000
        1,21 US$
        1 210,00 US$
        2500
        1,20 US$
        3 000,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
        Empezar con
        Nuevos productos
        • NCP1244/46
          NCP1244/46
          Featuring Dynamic Self-Supply the NCP1244 and NCP1246 are new fixed-frequency current-mode controllers from ON Semiconductor.
        • Compare FDP050AN06A0
          Compare FDP050AN06A0
          FDP050AN06A0 vs FDP050AN06A0NL vs FDP050AN06AO
        • FAN7688 Resonant Converter Controller
          FAN7688 Resonant Converter Controller
          ON Semiconductor's FAN7688 is an advanced pulse frequency modulated (PFM) controller for LLC resonant converters with synchronous rectification (SR).
        • NCP1256 Current Mode Controller
          NCP1256 Current Mode Controller
          ON Semiconductor's NCP1256 includes everything to build cost-effective switch mode power supplies ranging from a few watts up to several tens of watts. Housed in a tiny TSOP-6 package, the par
        • FCP190N60E/FCP380N60E SuperFET II
          FCP190N60E/FCP380N60E SuperFET II
          ON Semiconductor's high-end, AC-DC switch-mode power supply applications require high power-density.
        • Stepper Motor Drivers
          Stepper Motor Drivers
          This portfolio includes a wide selection of ICs operating at supply voltages less than 20V. Many have the ability to draw zero current in standby mode.
        More Newest Products
        Top