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SISH615ADN-T1-GE3

SISH615ADN-T1-GE3
Mfr. #:
SISH615ADN-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET -20V Vds; 12V Vgs PowerPAK 1212-8SH
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SISH615ADN-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SISH615ADN-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK1212-8
Número de canales:
1 Channel
Polaridad del transistor:
P-Channel
Vds - Voltaje de ruptura de drenaje-fuente:
20 V
Id - Corriente de drenaje continua:
35 A
Rds On - Resistencia de la fuente de drenaje:
4.4 mOhms
Vgs th - Voltaje umbral puerta-fuente:
- 1.5 V
Vgs - Voltaje puerta-fuente:
12 V
Qg - Carga de puerta:
183 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
52 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SIS
Tipo de transistor:
1 P-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
82 S
Otoño:
26 ns
Tipo de producto:
MOSFET
Hora de levantarse:
40 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
75 ns
Tiempo típico de retardo de encendido:
41 ns
Tags
SISH6, SISH, SIS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
TrenchFET Gen IV MOSFETs
Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.
Parte # Mfg. Descripción Valores Precio
SISH615ADN-T1-GE3
DISTI # V72:2272_22759346		Vishay IntertechnologiesP-Channel 20 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 4.4 m @ 10Vm @ 7.5V 6 m @ 4.5V3000
  • 3000:$0.2128
  • 1000:$0.2319
  • 500:$0.2950
  • 250:$0.3464
  • 100:$0.3608
  • 25:$0.4643
  • 10:$0.5207
  • 1:$0.6406
SISH615ADN-T1-GE3
DISTI # SISH615ADN-T1-GE3CT-ND		Vishay SiliconixMOSFET P-CHAN 20 V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5384In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SISH615ADN-T1-GE3
DISTI # SISH615ADN-T1-GE3DKR-ND		Vishay SiliconixMOSFET P-CHAN 20 V POWERPAK 1212
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5384In Stock
  • 1000:$0.2596
  • 500:$0.3245
  • 100:$0.4104
  • 10:$0.5350
  • 1:$0.6100
SISH615ADN-T1-GE3
DISTI # SISH615ADN-T1-GE3TR-ND		Vishay SiliconixMOSFET P-CHAN 20 V POWERPAK 1212
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 30000:$0.1995
  • 15000:$0.2047
  • 6000:$0.2126
  • 3000:$0.2284
SISH615ADN-T1-GE3
DISTI # 31081364		Vishay IntertechnologiesP-Channel 20 V (D-S) MOSFET PowerPAK 1212-8SH 1G , 4.4 m @ 10Vm @ 7.5V 6 m @ 4.5V3000
  • 3000:$0.2128
  • 1000:$0.2319
  • 500:$0.2950
  • 250:$0.3464
  • 100:$0.3608
  • 34:$0.4643
SISH615ADN-T1-GE3
DISTI # SISH615ADN-T1-GE3		Vishay IntertechnologiesP-CHANNEL 20-V (D-S) MOSFET - Tape and Reel (Alt: SISH615ADN-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.1919
  • 30000:$0.1969
  • 18000:$0.2029
  • 12000:$0.2109
  • 6000:$0.2179
SISH615ADN-T1-GE3
DISTI # 81AC3497		Vishay IntertechnologiesP-CHANNEL 20-V (D-S) MOSFET0
  • 50000:$0.1940
  • 30000:$0.2030
  • 20000:$0.2180
  • 10000:$0.2330
  • 5000:$0.2520
  • 1:$0.2580
SISH615ADN-T1-GE3
DISTI # 99AC9585		Vishay IntertechnologiesMOSFET, P-CH, -20V, -35A, 150DEG C, 52W,Transistor Polarity:P Channel,Continuous Drain Current Id:-35A,Drain Source Voltage Vds:-20V,On Resistance Rds(on):0.0035ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-1.5V,RoHS Compliant: Yes20
  • 1000:$0.2420
  • 500:$0.3030
  • 250:$0.3350
  • 100:$0.3680
  • 50:$0.4060
  • 25:$0.4450
  • 10:$0.4840
  • 1:$0.5960
SISH615ADN-T1-GE3
DISTI # 78-SISH615ADN-T1-GE3		Vishay IntertechnologiesMOSFET -20V Vds,12V Vgs PowerPAK 1212-8SH
RoHS: Compliant		4584
  • 1:$0.5900
  • 10:$0.4780
  • 100:$0.3630
  • 500:$0.3000
  • 1000:$0.2400
  • 3000:$0.2170
  • 6000:$0.2020
  • 9000:$0.1950
  • 24000:$0.1870
SISH615ADN-T1-GE3
DISTI # 3019134		Vishay IntertechnologiesMOSFET, P-CH, -20V, -35A, 150DEG C, 52W
RoHS: Compliant		0
  • 1000:$0.3400
  • 500:$0.4290
  • 250:$0.4800
  • 100:$0.5310
  • 25:$0.7130
  • 5:$0.7810
SISH615ADN-T1-GE3
DISTI # 3019134		Vishay IntertechnologiesMOSFET, P-CH, -20V, -35A, 150DEG C, 52W5930
  • 500:£0.2180
  • 250:£0.2410
  • 100:£0.2640
  • 10:£0.3870
  • 1:£0.4900
Imagen Parte # Descripción
ESP32-D0WDQ6

Mfr.#: ESP32-D0WDQ6

OMO.#: OMO-ESP32-D0WDQ6

 RF System on a Chip - SoC SMD IC ESP32-D0WDQ6, Dual Core MCU, WiFi & Bluetooth
LPV821DBVR

Mfr.#: LPV821DBVR

OMO.#: OMO-LPV821DBVR

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DST2080S

Mfr.#: DST2080S

OMO.#: OMO-DST2080S

 Schottky Diodes & Rectifiers 80V 20A
MSP430F5310IRGCR

Mfr.#: MSP430F5310IRGCR

OMO.#: OMO-MSP430F5310IRGCR

 16-bit Microcontrollers - MCU MSP430F530x Mixed Signal MCU
NTCG103JF103FT1S

Mfr.#: NTCG103JF103FT1S

OMO.#: OMO-NTCG103JF103FT1S-TDK

 Thermistor NTC 10K Ohm 1% 2-Pin 0402 Surface Mount Solder Pad 3435K T/R Automotive
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Mfr.#: LPV821DBVR

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 ZERO-DRIFT LOW POWER AMPLIFIER
ESP32-D0WDQ6

Mfr.#: ESP32-D0WDQ6

OMO.#: OMO-ESP32-D0WDQ6-ESPRESSIF-SYSTEMS

 RF Module (Alt: ESP32-D0WDQ6)
DRV8873HPWPRQ1

Mfr.#: DRV8873HPWPRQ1

OMO.#: OMO-DRV8873HPWPRQ1-TEXAS-INSTRUMENTS

 BRUSHED DC MOTOR DRIVER
DST2080S

Mfr.#: DST2080S

OMO.#: OMO-DST2080S-LITTELFUSE

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NX3225SA-26.000000MHZ-G4

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 CRYSTAL 26.0000MHZ 10PF SMD
Disponibilidad
Valores:
Available
En orden:
1987
Ingrese la cantidad:
El precio actual de SISH615ADN-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,59 US$
0,59 US$
10
0,48 US$
4,78 US$
100
0,36 US$
36,30 US$
500
0,30 US$
150,00 US$
1000
0,24 US$
240,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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