IS61WV51216EEBLL-10BLI

IS61WV51216EEBLL-10BLI
Mfr. #:
IS61WV51216EEBLL-10BLI
Fabricante:
ISSI
Descripción:
SRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IS61WV51216EEBLL-10BLI Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IS61WV51216EEBLL-10BLI más información
Atributo del producto
Valor de atributo
Fabricante:
ISSI
Categoria de producto:
SRAM
RoHS:
Y
Tamaño de la memoria:
8 Mbit
Organización:
512 k x 16
Tiempo de acceso:
10 ns
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
3.6 V
Voltaje de suministro - Min:
2.4 V
Corriente de suministro - Máx .:
95 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TFBGA-48
Tipo de memoria:
SDR
Serie:
IS61WV51216EEBLL
Escribe:
Asincrónico
Marca:
ISSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
480
Subcategoría:
Memoria y almacenamiento de datos
Tags
IS61WV51216EEBLL-10B, IS61WV51216EEB, IS61WV51216EE, IS61WV51216E, IS61WV5121, IS61WV5, IS61W, IS61, IS6
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS
***ark
8Mb,high-Speed/low Power,async With Ecc,512K X 16,10Ns,2.4V-3.6V,48 Ball Mbga (6X8 Mm), Rohs
***ical
SRAM Chip Async Dual 2.5V/3.3V 16M-bit 512K x 16 10ns 48-Pin Mini-BGA
***i-Key
IC SRAM 8M PARALLEL 48TFBGA
Asynchronous SRAMs
ISSI Asynchronous SRAMs are offered in x8, x16, and x32 configurations. These devices are available in high-speed, low-power, high-speed/low-power, PowerSaver lower power and automotive versions with long-term support offered by ISSI's commitment to continued development of these products. With a wide offering of densities (64K to 16M), speeds (8ns to 55ns), supply voltages (1.65V to 5V), temperature ranges (commercial, industrial and automotive), and packages (BGA, SOJ, SOP, sTSOP, and TSOP) ISSI offers just about any asynchronous SRAM that an engineer could need for their latest design.Learn More
Parte # Mfg. Descripción Valores Precio
IS61WV51216EEBLL-10BLI
DISTI # IS61WV51216EEBLL-10BLI-ND
Integrated Silicon Solution IncIC SRAM 8M PARALLEL 48TFBGA
RoHS: Compliant
Min Qty: 480
Container: Tray
Temporarily Out of Stock
  • 480:$10.2060
IS61WV51216EEBLL-10BLI-TR
DISTI # IS61WV51216EEBLL-10BLI-TR-ND
Integrated Silicon Solution IncIC SRAM 8M PARALLEL 48TFBGA
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 2500:$9.3895
IS61WV51216EEBLL-10BLI
DISTI # IS61WV51216EEBLL-10BLI
Integrated Silicon Solution Inc8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS - Trays (Alt: IS61WV51216EEBLL-10BLI)
Min Qty: 480
Container: Tray
Americas - 0
  • 4800:$8.5900
  • 2880:$8.7900
  • 1920:$9.0900
  • 960:$9.2900
  • 480:$9.3900
IS61WV51216EEBLL-10BLI
DISTI # IS61WV51216EEBLL-10BLI
Integrated Silicon Solution Inc8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS (Alt: IS61WV51216EEBLL-10BLI)
RoHS: Compliant
Min Qty: 480
Asia - 0
  • 24000:$9.7297
  • 12000:$10.0000
  • 4800:$10.2857
  • 2400:$11.0769
  • 1440:$12.0000
  • 960:$14.4000
  • 480:$18.0000
IS61WV51216EEBLL-10BLI-TR
DISTI # IS61WV51216EEBLL-10BLI-TR
Integrated Silicon Solution Inc8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS - Tape and Reel (Alt: IS61WV51216EEBLL-10BLI-TR)
Min Qty: 2500
Container: Reel
Americas - 0
  • 25000:$8.9900
  • 15000:$9.2900
  • 10000:$9.6900
  • 5000:$10.0900
  • 2500:$10.4900
IS61WV51216EEBLL-10BLI
DISTI # 48AC3035
Integrated Silicon Solution Inc8MB,HIGH-SPEED/LOW POWER,ASYNC WITH ECC,512K X 16,10NS,2.4V-3.6V,48 BALL MBGA (6X8 MM), ROHS0
  • 500:$9.3600
  • 250:$9.6500
  • 100:$11.0200
  • 50:$11.6700
  • 25:$12.9600
  • 10:$13.3200
  • 1:$14.2600
IS61WV51216EEBLL-10BLI-TR
DISTI # 48AC3036
Integrated Silicon Solution Inc8MB,HIGH-SPEED/LOW POWER,ASYNC WITH ECC,512K X 16,10NS,2.4V-3.6V,48 BALL MBGA (6X8 MM), ROHS0
  • 1200:$8.5700
  • 800:$9.0000
  • 400:$9.2900
  • 200:$9.5800
  • 1:$10.0800
IS61WV51216EEBLL-10BLI
DISTI # 870-61W51216EEBLL1BI
Integrated Silicon Solution IncSRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS
RoHS: Compliant
392
  • 1:$13.0400
  • 10:$12.0800
  • 25:$11.8100
  • 50:$11.7400
  • 100:$10.3400
IS61WV51216EEBLL-10BLI-TR
DISTI # 870-61W51216EEBL1BIT
Integrated Silicon Solution IncSRAM 8Mb,High-Speed/Low Power,Async with ECC,512K x 16,10ns,2.4V-3.6V,48 Ball mBGA (6x8 mm), RoHS0
  • 2500:$8.6500
Imagen Parte # Descripción
2SCR542PFRAT100

Mfr.#: 2SCR542PFRAT100

OMO.#: OMO-2SCR542PFRAT100

Bipolar Transistors - BJT NPN SOT-89 5A 200 to 500hFE 30V
Si7223DN-T1-GE3

Mfr.#: Si7223DN-T1-GE3

OMO.#: OMO-SI7223DN-T1-GE3

MOSFET -30V Vds 20V Vgs PowerPAK 1212-8
NVMFS5C612NLT1G

Mfr.#: NVMFS5C612NLT1G

OMO.#: OMO-NVMFS5C612NLT1G

MOSFET NFET SO8FL 60V 235A 1.5MO
S27KS0641DPBHI020

Mfr.#: S27KS0641DPBHI020

OMO.#: OMO-S27KS0641DPBHI020

DRAM HyperRAM 1.8-V 64Mb
ZRB18AR61A226ME01L

Mfr.#: ZRB18AR61A226ME01L

OMO.#: OMO-ZRB18AR61A226ME01L

Multilayer Ceramic Capacitors MLCC - SMD/SMT
SI7223DN-T1-GE3

Mfr.#: SI7223DN-T1-GE3

OMO.#: OMO-SI7223DN-T1-GE3-VISHAY

MOSFET DUAL P-CHAN POWERPAK 1212
GRJ155R60J106ME11D

Mfr.#: GRJ155R60J106ME11D

OMO.#: OMO-GRJ155R60J106ME11D-MURATA-ELECTRONICS

CAP CER 10UF 6.3V X5R 0402
S27KS0641DPBHI020

Mfr.#: S27KS0641DPBHI020

OMO.#: OMO-S27KS0641DPBHI020-CYPRESS-SEMICONDUCTOR

IC DRAM 64M PARALLEL 24BGA HyperRAM KS
2SCR542PFRAT100

Mfr.#: 2SCR542PFRAT100

OMO.#: OMO-2SCR542PFRAT100-ROHM-SEMI

NPN DRIVER TRANSISTOR (CORRESPON
NVMFS5C612NLT1G

Mfr.#: NVMFS5C612NLT1G

OMO.#: OMO-NVMFS5C612NLT1G-ON-SEMICONDUCTOR

IGBT Transistors MOSFET NFET SO8FL 60V 235A 1.5MO
Disponibilidad
Valores:
382
En orden:
2365
Ingrese la cantidad:
El precio actual de IS61WV51216EEBLL-10BLI es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
8,81 US$
8,81 US$
10
8,10 US$
81,00 US$
25
7,91 US$
197,75 US$
100
7,09 US$
709,00 US$
250
6,88 US$
1 720,00 US$
500
6,54 US$
3 270,00 US$
1000
6,31 US$
6 310,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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