IRLS4030TRLPBF

IRLS4030TRLPBF
Mfr. #:
IRLS4030TRLPBF
Fabricante:
Infineon / IR
Descripción:
MOSFET MOSFT 100V 180A 4.3mOhm 87nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRLS4030TRLPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRLS4030TRLPBF DatasheetIRLS4030TRLPBF Datasheet (P4-P6)IRLS4030TRLPBF Datasheet (P7-P9)IRLS4030TRLPBF Datasheet (P10)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
180 A
Rds On - Resistencia de la fuente de drenaje:
4.3 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.5 V
Qg - Carga de puerta:
130 nC
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
370 W
Configuración:
Único
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Tipo de transistor:
1 N-Channel
Ancho:
6.22 mm
Marca:
Infineon / IR
Transconductancia directa - Mín .:
320 S
Otoño:
170 ns
Tipo de producto:
MOSFET
Hora de levantarse:
330 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Parte # Alias:
SP001552944
Unidad de peso:
0.139332 oz
Tags
IRLS4030TRLP, IRLS4030T, IRLS4, IRLS, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***(Formerly Allied Electronics)
IRLS4030PBF N-channel MOSFET Transistor; 180 A; 100 V; 3-Pin D2PAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***roFlash
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***ical
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK Tube
***ineon
Benefits: RoHS Compliant; Logic Level | Target Applications: Battery Operated Drive
***nell
MOSFET, N-CH 100V 180A D2PAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 110A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0034ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 2.5V; Po
*** Source Electronics
Trans MOSFET N-CH Si 100V 190A Automotive 7-Pin(6+Tab) D2PAK T/R / HEXFETPower MOSFET
***ernational Rectifier
Automotive Q101 100V Single N-Channel HEXFET Power MOSFET in a D2-Pak 7p Package
***el Electronic
Power Field-Effect Transistor, 190A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, D2PAK-7
***ure Electronics
FDB035N10 Series 100 V 214 A 3.5 mOhm N-Channel SuperFET® MOSFET - D2PAK-3
***Yang
Trans MOSFET N-CH 100V 214A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***emi
N-Channel PowerTrench® MOSFET 100V, 214A, 3.5mΩ
***hard Electronics
N CH MOSFET, POWERTRENCH, 100V, 120A, D2PAK - More Details
***ment14 APAC
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:214A; Source Voltage Vds:100V; On Resistance
***r Electronics
Power Field-Effect Transistor, 120A I(D), 100V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***rchild Semiconductor
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
***nell
MOSFET, N-CH, 214A, 100V, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 214A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.003ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 333W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
***-Tronics LLC (USA)
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R / MOSFET N-CH 100V 180A D2PAK
***ineon SCT
100V Single N-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***ure Electronics
Single N-Channel 100 V 4.7 mOhm 143 nC HEXFET® Power Mosfet - D2PAK
***Yang
Trans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Product that comes on tape, but is not reeled (
***ment14 APAC
MOSFET, N-CH, 100V, 180A, TO-263AB; Transistor Polarity:N Channel; Continuous Drain Current Id:180A; Source Voltage Vds:100V; On Resistance
***roFlash
Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N-CH, 100V, 180A, TO-263AB; Transistor Polarity: N Channel; Continuous Drain Current Id: 180A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0039ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: HEXFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Parte # Mfg. Descripción Valores Precio
IRLS4030TRLPBF
DISTI # V72:2272_13889642
Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
354
  • 800:$2.8129
IRLS4030TRLPBF
DISTI # IRLS4030TRLPBFCT-ND
Infineon Technologies AGMOSFET N-CH 100V 180A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
531In Stock
  • 100:$3.4061
  • 10:$4.0960
  • 1:$4.5500
IRLS4030TRLPBF
DISTI # IRLS4030TRLPBFDKR-ND
Infineon Technologies AGMOSFET N-CH 100V 180A D2PAK
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
531In Stock
  • 100:$3.4061
  • 10:$4.0960
  • 1:$4.5500
IRLS4030TRLPBF
DISTI # IRLS4030TRLPBFTR-ND
Infineon Technologies AGMOSFET N-CH 100V 180A D2PAK
RoHS: Compliant
Min Qty: 800
Container: Tape & Reel (TR)
On Order
  • 800:$2.4886
IRLS4030TRLPBF
DISTI # 30616539
Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
750
  • 500:$2.5372
  • 100:$2.6520
  • 50:$2.7923
  • 10:$3.3788
  • 5:$6.0180
IRLS4030TRLPBF
DISTI # IRLS4030TRLPBF
Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R (Alt: IRLS4030TRLPBF)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Asia - 0
    IRLS4030TRLPBF
    DISTI # IRLS4030TRLPBF
    Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: IRLS4030TRLPBF)
    RoHS: Compliant
    Min Qty: 800
    Container: Reel
    Americas - 0
    • 800:$1.4900
    • 1600:$1.4900
    • 3200:$1.3900
    • 4800:$1.2900
    • 8000:$1.2900
    IRLS4030TRLPBF
    DISTI # SP001552944
    Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R (Alt: SP001552944)
    RoHS: Compliant
    Min Qty: 800
    Container: Tape and Reel
    Europe - 0
    • 800:€1.6900
    • 1600:€1.5900
    • 3200:€1.5900
    • 4800:€1.4900
    • 8000:€1.3900
    IRLS4030TRLPBF
    DISTI # 43AC3299
    Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-263-3,Transistor Polarity:N Channel,Continuous Drain Current Id:180A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0034ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.5V,Power , RoHS Compliant: Yes536
    • 1:$3.5800
    • 10:$3.0500
    • 25:$2.9100
    • 50:$2.7800
    • 100:$2.6400
    • 250:$2.5100
    • 500:$2.2500
    IRLS4030TRLPBF
    DISTI # 70019182
    Infineon Technologies AGMOSFET,100V,180A,4.3 mOhm,87 nC Qg,D2-PAK
    RoHS: Compliant
    0
    • 1:$6.1100
    • 10:$5.4000
    • 100:$4.7000
    • 500:$4.0800
    • 1000:$3.6000
    IRLS4030TRLPBF
    DISTI # 942-IRLS4030TRLPBF
    Infineon Technologies AGMOSFET MOSFT 100V 180A 4.3mOhm 87nC
    RoHS: Compliant
    1600
    • 1:$3.5800
    • 10:$3.0500
    • 100:$2.6400
    • 250:$2.5100
    • 500:$2.2500
    • 800:$1.9000
    • 2400:$1.8000
    IRLS4030TRLPBF
    DISTI # 1301029P
    Infineon Technologies AGMOSFET HEXFET N-CH 100V 180A D2PAK, RL686
    • 10:£1.3550
    IRLS4030TRLPBF
    DISTI # IRLS4030PBF-GURT
    Infineon Technologies AGN-LogL 100V 180A 370W 0,0043R DPak
    RoHS: Compliant
    660
    • 10:€2.1300
    • 50:€1.8300
    • 200:€1.7300
    • 500:€1.6700
    IRLS4030TRLPBF
    DISTI # C1S322000505133
    Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    750
    • 500:$1.9900
    • 100:$2.0800
    • 50:$2.1900
    • 10:$2.6500
    • 1:$4.7200
    IRLS4030TRLPBF
    DISTI # C1S322000505124
    Infineon Technologies AGTrans MOSFET N-CH 100V 180A 3-Pin(2+Tab) D2PAK T/R
    RoHS: Compliant
    354
    • 250:$2.1210
    • 100:$2.2150
    • 25:$2.4779
    • 10:$2.4859
    • 1:$2.8129
    IRLS4030TRLPBF
    DISTI # 2803431
    Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-263-3
    RoHS: Compliant
    536
    • 1:$4.8600
    • 10:$4.5500
    • 100:$4.0200
    • 250:$3.8000
    • 500:$3.6000
    • 1000:$3.4300
    IRLS4030TRLPBF
    DISTI # 2803431
    Infineon Technologies AGMOSFET, N-CH, 100V, 180A, TO-263-3
    RoHS: Compliant
    536
    • 1:£2.6800
    • 10:£2.3300
    • 100:£2.0100
    • 250:£1.9200
    • 500:£1.7200
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    Disponibilidad
    Valores:
    Available
    En orden:
    1985
    Ingrese la cantidad:
    El precio actual de IRLS4030TRLPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    3,58 US$
    3,58 US$
    10
    3,04 US$
    30,40 US$
    100
    2,63 US$
    263,00 US$
    250
    2,50 US$
    625,00 US$
    500
    2,24 US$
    1 120,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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