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AS4C16M16MSA-6BINTR

AS4C16M16MSA-6BINTR
Mfr. #:
AS4C16M16MSA-6BINTR
Fabricante:
Alliance Memory
Descripción:
DRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AS4C16M16MSA-6BINTR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
AS4C16M16MSA-6BINTR más información
Atributo del producto
Valor de atributo
Fabricante:
Memoria de la Alianza
Categoria de producto:
DRACMA
RoHS:
Y
Escribe:
SDRAM móvil
Ancho del bus de datos:
16 bit
Organización:
16 M x 16
Paquete / Caja:
FBGA-54
Tamaño de la memoria:
256 Mbit
Frecuencia máxima de reloj:
166 MHz
Tiempo de acceso:
6 ns
Voltaje de suministro - Máx:
1.95 V
Voltaje de suministro - Min:
1.7 V
Corriente de suministro - Máx .:
80 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Serie:
AS4C16M16MSA-6
Embalaje:
Carrete
Marca:
Memoria de la Alianza
Estilo de montaje:
SMD / SMT
Sensible a la humedad:
Yes
Tipo de producto:
DRACMA
Cantidad de paquete de fábrica:
1000
Subcategoría:
Memoria y almacenamiento de datos
Tags
AS4C16M16M, AS4C16M1, AS4C16M, AS4C16, AS4C1, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Mobile Low Power SDRAMs
Alliance Memory Mobile Low Power SDRAMs are high-performance CMOS Dynamic RAMs (DRAM) with 64ms refresh period (4K cycle). These devices feature advanced circuit design to provide low active current and extremely low standby current. The low power features include Auto Temperature Compensated Self Refresh (TCSR), partial array self-refresh power-saving mode, deep power down mode, and driver strength control. The Mobile Low Power SDRAMs support 133MHZ/166MHZ high speeds and operate within -40°C to 85°C industrial temperature range. These quad bank devices are available in 128M, 256M, and 512M densities with 4Mx32, 8Mx16, 8Mx32, 16Mx32, and 32Mx16 organizations. The Mobile Low Power SDRAMs are compatible with the JEDEC standard LP-SDRAM specifications. Learn More
Parte # Mfg. Descripción Valores Precio
AS4C16M16MSA-6BINTR
DISTI # AS4C16M16MSA-6BINTR-ND		Alliance Memory IncIC DRAM 256M PARALLEL 54FBGA
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 2000:$4.1108
  • 1000:$4.2478
AS4C16M16MSA-6BINTR
DISTI # AS4C16M16MSA-6BINTR		Alliance Memory IncDRAM Chip Mobile LP SDRAM 256Mbit 16M X 16 1.8V 54-Pin FPBGA T/R (Alt: AS4C16M16MSA-6BINTR)
RoHS: Compliant
Min Qty: 1000
Container: Tape and Reel		Europe - 0
  • 10000:€3.4900
  • 6000:€3.6900
  • 4000:€3.9900
  • 2000:€4.1900
  • 1000:€4.3900
AS4C16M16MSA-6BINTR
DISTI # AS4C16M16MSA-6BINTR		Alliance Memory IncDRAM Chip Mobile LP SDRAM 256Mbit 16M X 16 1.8V 54-Pin FPBGA T/R - Tape and Reel (Alt: AS4C16M16MSA-6BINTR)
RoHS: Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 10000:$3.2900
  • 6000:$3.3900
  • 4000:$3.5900
  • 2000:$3.6900
  • 1000:$3.7900
AS4C16M16MSA-6BIN
DISTI # 913-AS4C16M16MSA6BIN		Alliance Memory IncDRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT
RoHS: Compliant		638
  • 1:$6.1400
  • 10:$5.6000
  • 25:$5.4900
  • 50:$5.4600
  • 100:$4.9000
  • 250:$4.8800
  • 500:$4.5700
  • 1000:$4.3800
AS4C16M16MSA-6BINTR
DISTI # 913-A4C16M16MSA6BINT		Alliance Memory IncDRAM 256M 166MHz 16Mx16 Mobile LP SDRAM IT
RoHS: Compliant		0
  • 1:$6.2400
  • 10:$5.7000
  • 25:$5.5900
  • 50:$5.5500
  • 100:$4.9800
  • 250:$4.9600
  • 500:$4.6500
  • 1000:$4.4500
Imagen Parte # Descripción
AS4C16M16D1A-5TINTR

Mfr.#: AS4C16M16D1A-5TINTR

OMO.#: OMO-AS4C16M16D1A-5TINTR

 DRAM
AS4C16M16SA-7BCN

Mfr.#: AS4C16M16SA-7BCN

OMO.#: OMO-AS4C16M16SA-7BCN

 DRAM
AS4C16M16D1-5BCN

Mfr.#: AS4C16M16D1-5BCN

OMO.#: OMO-AS4C16M16D1-5BCN

 DRAM 256M 2.5V 200Mhz 16M x 16 DDR1
AS4C16M16MD1-6BCN

Mfr.#: AS4C16M16MD1-6BCN

OMO.#: OMO-AS4C16M16MD1-6BCN

 DRAM 256M, 1.8V, 166Mhz 16M x 16 Mobile DDR
AS4C16M16D2-25BCN

Mfr.#: AS4C16M16D2-25BCN

OMO.#: OMO-AS4C16M16D2-25BCN

 DRAM
AS4C16M16S-7BCN

Mfr.#: AS4C16M16S-7BCN

OMO.#: OMO-AS4C16M16S-7BCN

 DRAM 256Mb, 3.3V, 143Mhz 16M x 16 SDRAM
AS4C16M16D1A-5TCN

Mfr.#: AS4C16M16D1A-5TCN

OMO.#: OMO-AS4C16M16D1A-5TCN-ALLIANCE-MEMORY

 IC DRAM 256M PARALLEL 66TSOP II
AS4C16M16SA-6BAN

Mfr.#: AS4C16M16SA-6BAN

OMO.#: OMO-AS4C16M16SA-6BAN-ALLIANCE-MEMORY

 IC DRAM 256M PARALLEL 54TFBGA Automotive, AEC-Q100
AS4C16M16S-6TCNTR

Mfr.#: AS4C16M16S-6TCNTR

OMO.#: OMO-AS4C16M16S-6TCNTR-ALLIANCE-MEMORY

 DRAM 256M, 3.3V, 166Mhz 16M x 16 SDRAM
AS4C16M16D1-5BIN

Mfr.#: AS4C16M16D1-5BIN

OMO.#: OMO-AS4C16M16D1-5BIN-ALLIANCE-MEMORY

 DRAM 256M, 2.5V, 200Mhz 16M x 16 DDR1
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de AS4C16M16MSA-6BINTR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,24 US$
6,24 US$
10
5,70 US$
57,00 US$
25
5,59 US$
139,75 US$
50
5,55 US$
277,50 US$
100
4,98 US$
498,00 US$
250
4,96 US$
1 240,00 US$
500
4,65 US$
2 325,00 US$
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