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AS4C16M16D1A-5TINTR

AS4C16M16D1A-5TINTR
Mfr. #:
AS4C16M16D1A-5TINTR
Fabricante:
Alliance Memory
Descripción:
DRAM
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
AS4C16M16D1A-5TINTR Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
AS4C16M16D1A-5TINTR más información
Atributo del producto
Valor de atributo
Fabricante:
Memoria de la Alianza
Categoria de producto:
DRACMA
RoHS:
Y
Escribe:
SDRAM - DDR1
Ancho del bus de datos:
16 bit
Organización:
16 M x 16
Paquete / Caja:
TSOP-66
Tamaño de la memoria:
256 Mbit
Frecuencia máxima de reloj:
200 MHz
Voltaje de suministro - Máx:
2.7 V
Voltaje de suministro - Min:
2.3 V
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Serie:
AS4C16M16D1A
Embalaje:
Carrete
Marca:
Memoria de la Alianza
Estilo de montaje:
SMD / SMT
Sensible a la humedad:
Yes
Tipo de producto:
DRACMA
Cantidad de paquete de fábrica:
1000
Subcategoría:
Memoria y almacenamiento de datos
Tags
AS4C16M16D1A, AS4C16M16D1, AS4C16M16D, AS4C16M1, AS4C16M, AS4C16, AS4C1, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
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DDR1 Synchronous DRAM
Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
Parte # Mfg. Descripción Valores Precio
AS4C16M16D1A-5TINTR
DISTI # AS4C16M16D1A-5TINTR-ND		Alliance Memory IncIC DRAM 256M PARALLEL 66TSOP II
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 3000:$2.6366
  • 2000:$2.7443
  • 1000:$2.7726
AS4C16M16D1A-5TINTR
DISTI # AS4C16M16D1A-5TINTR		Alliance Memory IncDRAM Chip DDR SDRAM 256Mbit 16M X 16 66-Pin TSOP-II T/R - Tape and Reel (Alt: AS4C16M16D1A-5TINTR)
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$2.2900
  • 2000:$2.2900
  • 4000:$2.1900
  • 6000:$2.0900
  • 10000:$2.0900
AS4C16M16D1A-5TINTRAlliance Memory IncDDR SDRAM 256M 16M x 16 2.5V 66pin TSOP II1000
    Imagen Parte # Descripción
    AS4C16M16D1A-5TINTR

    Mfr.#: AS4C16M16D1A-5TINTR

    OMO.#: OMO-AS4C16M16D1A-5TINTR

    		 DRAM
    AS4C16M16SA-6TIN

    Mfr.#: AS4C16M16SA-6TIN

    OMO.#: OMO-AS4C16M16SA-6TIN

    		 DRAM
    AS4C16M16SA-7TCNTR

    Mfr.#: AS4C16M16SA-7TCNTR

    OMO.#: OMO-AS4C16M16SA-7TCNTR

    		 DRAM
    AS4C16M16D2-25BINTR

    Mfr.#: AS4C16M16D2-25BINTR

    OMO.#: OMO-AS4C16M16D2-25BINTR

    		 DRAM
    AS4C16M16D1-5TIN

    Mfr.#: AS4C16M16D1-5TIN

    OMO.#: OMO-AS4C16M16D1-5TIN

    		 DRAM 256Mb, 3.3V, 200Mhz 16M x 16 DDR
    AS4C16M16MD1-6BCM

    Mfr.#: AS4C16M16MD1-6BCM

    OMO.#: OMO-AS4C16M16MD1-6BCM-1190

    		 Nuevo y original
    AS4C16M16D1A-5TINTR

    Mfr.#: AS4C16M16D1A-5TINTR

    OMO.#: OMO-AS4C16M16D1A-5TINTR-ALLIANCE-MEMORY

    		 IC DRAM 256M PARALLEL 66TSOP II
    AS4C16M16D2-25BCNTR

    Mfr.#: AS4C16M16D2-25BCNTR

    OMO.#: OMO-AS4C16M16D2-25BCNTR-ALLIANCE-MEMORY

    		 IC DRAM 256M PARALLEL 84TFBGA
    AS4C16M16S-6BINTR

    Mfr.#: AS4C16M16S-6BINTR

    OMO.#: OMO-AS4C16M16S-6BINTR-ALLIANCE-MEMORY

    		 IC DRAM 256M PARALLEL 54TFBGA
    AS4C16M16D1-5TCN

    Mfr.#: AS4C16M16D1-5TCN

    OMO.#: OMO-AS4C16M16D1-5TCN-ALLIANCE-MEMORY

    		 DRAM 256Mb, 3.3V, 200Mhz 16M x 16 DDR
    Disponibilidad
    Valores:
    Available
    En orden:
    1000
    Ingrese la cantidad:
    El precio actual de AS4C16M16D1A-5TINTR es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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