IRL40S212

IRL40S212
Mfr. #:
IRL40S212
Fabricante:
Infineon / IR
Descripción:
MOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRL40S212 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IRL40S212 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-252-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
40 V
Id - Corriente de drenaje continua:
254 A
Rds On - Resistencia de la fuente de drenaje:
2.4 mOhms
Vgs th - Voltaje umbral puerta-fuente:
1 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
91 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 175 C
Pd - Disipación de energía:
231 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
Fuerte IRFET
Embalaje:
Carrete
Altura:
2.3 mm
Longitud:
6.5 mm
Ancho:
6.22 mm
Marca:
Infineon / IR
Transconductancia directa - Mín .:
256 S
Otoño:
84 ns
Tipo de producto:
MOSFET
Hora de levantarse:
154 ns
Cantidad de paquete de fábrica:
800
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
88 ns
Tiempo típico de retardo de encendido:
39 ns
Parte # Alias:
SP001568454
Unidad de peso:
0.139332 oz
Tags
IRL40S2, IRL40S, IRL40, IRL4, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 40 V 1.9 mOhm 91 nC HEXFET® Power Mosfet - D2PAK
***et
MOSFET, 40V, 195A, 1.9 MOHM, 91 NC QG, LOGIC LEVEL, D2PAK
***ical
Trans MOSFET N-CH Si 40V 254A 3-Pin(2+Tab) D2PAK T/R
***ineon
Benefits: Optimized for Logic Level Drive; Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; Fully Characterized Capacitance and Avalanche SOA; Enhanced body diode dV/dt and dI/dt Capability; Lead-Free; RoHS Compliant, Halogen-Free
StrongIRFET™ Power MOSFETs
Infineon StrongIRFET™ Power MOSFET family are optimized for low RDS(on) and high current capability. These devices are ideal for low-frequency applications requiring performance and ruggedness. These MOSFETs have the highest current carrying capability in the industry. This feature leads to increased robustness and reliability for high power density applications which require high efficiency and reliability. 
Parte # Mfg. Descripción Valores Precio
IRL40S212
DISTI # 27499136
Infineon Technologies AGTrans MOSFET N-CH Si 40V 254A 3-Pin(2+Tab) D2PAK Tube80
  • 37:$1.7250
IRL40S212
DISTI # IRL40S212-ND
Infineon Technologies AGMOSFET N-CH 40V 195A
RoHS: Compliant
Min Qty: 25600
Container: Tube
Temporarily Out of Stock
  • 25600:$1.7290
IRL40S212
DISTI # IRL40S212
Infineon Technologies AGTrans MOSFET N-CH 40V 254A 3-Pin D2PAK T/R - Tape and Reel (Alt: IRL40S212)
RoHS: Compliant
Min Qty: 25600
Container: Reel
Americas - 0
  • 25600:$1.3900
  • 27200:$1.2900
  • 52800:$1.2900
  • 128000:$1.1900
  • 256000:$1.1900
IRL40S212
DISTI # SP001568454
Infineon Technologies AGTrans MOSFET N-CH 40V 254A 3-Pin D2PAK T/R (Alt: SP001568454)
RoHS: Compliant
Min Qty: 800
Container: Tape and Reel
Europe - 0
  • 800:€1.3900
  • 1600:€1.3900
  • 3200:€1.3900
  • 4800:€1.3900
  • 8000:€1.3900
IRL40S212
DISTI # 53Y4836
Infineon Technologies AGMOSFET, N-CH, 40V, 195A, TO-263AB-3,Transistor Polarity:N Channel,Continuous Drain Current Id:195A,Drain Source Voltage Vds:40V,On Resistance Rds(on):0.0015ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.4V,MSL:- RoHS Compliant: Yes80
  • 1:$1.3800
IRL40S212Infineon Technologies AGPower Field-Effect Transistor
RoHS: Compliant
1000
  • 1000:$1.6300
  • 500:$1.7200
  • 100:$1.7900
  • 25:$1.8700
  • 1:$2.0100
IRL40S212International RectifierPower Field-Effect Transistor
RoHS: Compliant
3250
  • 1000:$1.6300
  • 500:$1.7200
  • 100:$1.7900
  • 25:$1.8700
  • 1:$2.0100
IRL40S212
DISTI # 942-IRL40S212
Infineon Technologies AGMOSFET 40V, 195A, 1.9 mOhm 91 nC Qg, Logic Lvl
RoHS: Compliant
0
  • 1:$3.2700
  • 10:$2.7800
  • 100:$2.4100
  • 250:$2.2900
  • 500:$2.0600
  • 800:$1.7300
IRL40S212
DISTI # 8967349P
Infineon Technologies AGN-CHANNEL POWER MOSFET 40V 414A TO220, TU2675
  • 10:£2.3120
  • 50:£2.1560
  • 100:£2.0000
  • 250:£1.9020
IRL40S212
DISTI # 8967349
Infineon Technologies AGN-CHANNEL POWER MOSFET 40V 414A TO220, PK235
  • 5:£2.7140
  • 10:£2.3120
  • 50:£2.1560
  • 100:£2.0000
  • 250:£1.9020
IRL40S212Infineon Technologies AGINSTOCK749
    IRL40S212
    DISTI # 2577182
    Infineon Technologies AG(Alternate Part Number: SP001568454
    RoHS: Compliant
    0
    • 1:$5.0100
    • 10:$4.2600
    • 100:$3.6900
    • 250:$3.5100
    • 500:$3.1500
    • 800:$2.6500
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    Disponibilidad
    Valores:
    Available
    En orden:
    4500
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