IRF8915PBF

IRF8915PBF
Mfr. #:
IRF8915PBF
Fabricante:
Rochester Electronics, LLC
Descripción:
IGBT Transistors MOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF8915PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Rectificador internacional
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Tubo
Unidad de peso
0.019048 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
SOIC-8
Tecnología
Si
Número de canales
2 Channel
Configuración
Dual Dual Drain
Tipo transistor
2 N-Channel
Disipación de potencia Pd
2 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
3.6 ns
Hora de levantarse
12 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
8.9 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Vgs-th-Gate-Source-Threshold-Voltage
1.7 V to 2.5 V
Resistencia a la fuente de desagüe de Rds
27 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
7.1 ns
Tiempo de retardo de encendido típico
6 ns
Qg-Gate-Charge
4.9 nC
Transconductancia directa-Mín.
12 S
Modo de canal
Mejora
Tags
IRF8915, IRF891, IRF89, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Transistor MOSFET Array Dual N-CH 20V 8.9A 8-Pin SOIC Tube
***ernational Rectifier
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
***ark
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:8.9A; On Resistance, Rds(on):18.3mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes
***ure Electronics
Dual N-Channel 20 V 18.3/11.3 mOhm 11/23 nC HEXFET® Power Mosfet - SOIC-8
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 12A I(D), 20V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current; Dual N-Channel MOSFET
***ment14 APAC
N CHANNEL MOSFET, 20V, 10A; Transistor P; N CHANNEL MOSFET, 20V, 10A; Transistor Polarity:N Channel; Continuous Drain Current Id:10A; Drain Source Voltage Vds:20V; On Resistance Rds(on):18.3mohm; Rds(on) Test Voltage Vgs:20V; Threshold Voltage Vgs Typ:2.55V; No. of Pins:8
***(Formerly Allied Electronics)
IRF7401PBF N-channel MOSFET Transistor; 8.7 A; 20 V; 8-Pin SOIC
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*** Source Electronics
Trans MOSFET N-CH Si 20V 8.7A 8-Pin SOIC T/R / MOSFET N-CH 20V 8.7A 8-SOIC
***nell
N CHANNEL MOSFET, 20V, 8.7A, SOIC; Trans; Transistor Polarity: N Channel; Continuous Drain Current Id: 8.7A; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.022ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vg
***roFlash
Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature
***trelec
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 8.7 / Drain-Source Voltage (Vds) V = 20 / ON Resistance (Rds(on)) mOhm = 22 / Gate-Source Voltage V = 12 / Fall Time ns = 92 / Rise Time ns = 72 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 13 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
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MOSFET 2N-CH 20V 7A 8-SOIC / Trans MOSFET N-CH Si 20V 7A 8-Pin SOIC T/R
***ineon
Benefits: RoHS Compliant; Low RDS(on); Dual N-Channel MOSFET
***ark
Mosfet, Dual N-Ch, 20V, 7A, Soic; Transistor Polarity:dual N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:20V; On Resistance Rds(On):0.03Ohm; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Power Rohs Compliant: Yes
***et Japan
Transistor MOSFET Array Dual N-CH 20V 7.63A 8-Pin SOIC T/R
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Trans MOSFET N-CH 20V 7.63A Automotive 8-Pin SO T/R
***(Formerly Allied Electronics)
Dual N-Channel Enhancement MOSFET SOIC8
***des Inc SCT
N-Channel Mosfet, 20V VDS, 12±V VGS
***peria
PSMN010-25YLC - N-channel 25 V 10.6 mΩ logic level MOSFET in LFPAK using NextPower technology
***et
Transistor MOSFET N-Channel 25V 39A 4-Pin LFPAK
*** Electronics
MOSFET N-CH 25 V 10.6 MOHMS LOGIC LEVEL MOSFET
***el Electronic
Interface - Drivers, Receivers, Transceivers 2 (1 Year) 8-SOIC (0.154, 3.90mm Width) Tape & Reel (TR) Transceiver Surface Mount 4.75V~5.25V 2/1 1Mbps CAN TRANSCEIVER
***peria
PSMN012-25YLC - N-channel 25 V 12.6 mΩ logic level MOSFET in LFPAK using NextPower technology
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Trans MOSFET N-CH 25V 33A 5-Pin(4+Tab) LFPAK T/R
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MOSFET N-CH 25 V 12.6 MOHMS LOGIC LEVEL MOSFET
Parte # Mfg. Descripción Valores Precio
IRF8915TRPBF
DISTI # IRF8915PBFCT-ND
Infineon Technologies AGMOSFET 2N-CH 20V 8.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
7769In Stock
  • 1000:$0.3740
  • 500:$0.4675
  • 100:$0.6311
  • 10:$0.8180
  • 1:$0.9300
IRF8915TRPBF
DISTI # IRF8915PBFDKR-ND
Infineon Technologies AGMOSFET 2N-CH 20V 8.9A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
7769In Stock
  • 1000:$0.3740
  • 500:$0.4675
  • 100:$0.6311
  • 10:$0.8180
  • 1:$0.9300
IRF8915TRPBF
DISTI # IRF8915PBFTR-ND
Infineon Technologies AGMOSFET 2N-CH 20V 8.9A 8-SOIC
RoHS: Compliant
Min Qty: 4000
Container: Tape & Reel (TR)
4000In Stock
  • 4000:$0.3291
IRF8915PBF
DISTI # 70018279
Infineon Technologies AGIRF8915PBF Dual N-channel MOSFET Transistor,8.9 A,20 V,8-Pin SOIC
RoHS: Compliant
0
  • 3800:$1.0900
  • 7600:$1.0680
  • 19000:$1.0360
  • 38000:$0.9920
  • 95000:$0.9270
IRF8915PBF
DISTI # 942-IRF8915PBF
Infineon Technologies AGMOSFET 20V DUAL N-CH HEXFET 18.3mOhms 4.9nC
RoHS: Compliant
2570
  • 1:$1.0900
  • 10:$0.4830
  • 100:$0.3700
  • 1000:$0.3490
  • 2500:$0.3130
  • 10000:$0.3010
  • 25000:$0.2870
IRF8915PBFInternational Rectifier 
RoHS: Not Compliant
355
  • 1000:$0.2900
  • 500:$0.3100
  • 100:$0.3200
  • 25:$0.3400
  • 1:$0.3600
Imagen Parte # Descripción
IRF8910TRPBF

Mfr.#: IRF8910TRPBF

OMO.#: OMO-IRF8910TRPBF

MOSFET MOSFT DUAL NCh 20V 10A
IRF8910TRPBF

Mfr.#: IRF8910TRPBF

OMO.#: OMO-IRF8910TRPBF-INFINEON-TECHNOLOGIES

MOSFET 2N-CH 20V 10A 8-SOIC
IRF8915TRPBF-CUT TAPE

Mfr.#: IRF8915TRPBF-CUT TAPE

OMO.#: OMO-IRF8915TRPBF-CUT-TAPE-1190

Nuevo y original
IRF8915UTRPBF

Mfr.#: IRF8915UTRPBF

OMO.#: OMO-IRF8915UTRPBF-1190

Nuevo y original
IRF8910

Mfr.#: IRF8910

OMO.#: OMO-IRF8910-1190

INSTOCK
IRF8910PBF-1

Mfr.#: IRF8910PBF-1

OMO.#: OMO-IRF8910PBF-1-1190

Nuevo y original
IRF8910TR

Mfr.#: IRF8910TR

OMO.#: OMO-IRF8910TR-1190

Nuevo y original
IRF8910TRPBF.

Mfr.#: IRF8910TRPBF.

OMO.#: OMO-IRF8910TRPBF--1190

TRENCH_MOSFETS , ROHS COMPLIANT: YES
IRF8915PBFCT-ND

Mfr.#: IRF8915PBFCT-ND

OMO.#: OMO-IRF8915PBFCT-ND-1190

Nuevo y original
IRF8915TRPBF

Mfr.#: IRF8915TRPBF

OMO.#: OMO-IRF8915TRPBF-INFINEON-TECHNOLOGIES

MOSFET 2N-CH 20V 8.9A 8-SOIC
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de IRF8915PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
0,43 US$
0,43 US$
10
0,41 US$
4,09 US$
100
0,39 US$
38,75 US$
500
0,37 US$
182,95 US$
1000
0,34 US$
344,40 US$
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