IXFK80N50P

IXFK80N50P
Mfr. #:
IXFK80N50P
Fabricante:
Littelfuse
Descripción:
IGBT Transistors MOSFET 500V 80A
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFK80N50P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXFK80N50P más información
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
FET - Single
Serie
HiPerFET, PolarHT
embalaje
Tubo
Unidad de peso
0.352740 oz
Estilo de montaje
A través del orificio
Nombre comercial
HyperFET
Paquete-Estuche
TO-264-3, TO-264AA
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
A través del orificio
Número de canales
1 Channel
Paquete de dispositivo de proveedor
TO-264AA (IXFK)
Configuración
Único
Tipo FET
Canal N MOSFET, óxido metálico
Potencia máxima
1040W
Tipo transistor
1 N-Channel
Drenaje-a-fuente-voltaje-Vdss
500V
Entrada-Capacitancia-Ciss-Vds
12700pF @ 25V
Función FET
Estándar
Corriente-Continuo-Drenaje-Id-25 ° C
80A (Tc)
Rds-On-Max-Id-Vgs
65 mOhm @ 40A, 10V
Vgs-th-Max-Id
5V @ 8mA
Puerta-Carga-Qg-Vgs
197nC @ 10V
Disipación de potencia Pd
1040 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
16 ns
Hora de levantarse
27 ns
Vgs-Puerta-Fuente-Voltaje
30 V
Id-corriente-de-drenaje-continua
80 A
Vds-Drain-Source-Breakdown-Voltage
500 V
Resistencia a la fuente de desagüe de Rds
65 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
70 ns
Tiempo de retardo de encendido típico
25 ns
Transconductancia directa-Mín.
70 S
Modo de canal
Mejora
Tags
IXFK80N5, IXFK80, IXFK8, IXFK, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
N-Channel 500 V 65 mOhm Enhancement Mode Power MOSFET
***inecomponents.com
Trans MOSFET N-CH 500V 80A 3-Pin (3+Tab) TO-264
***nell
MOSFET, N, TO-264; Transistor type:HiPerFET; Voltage, Vds typ:500V; Current, Id cont:80A; Resistance, Rds on:0.065ohm; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:5V; Case style:TO-264; Capacitance, Ciss typ:12700pF; Charge, gate n-channel:197nC; Pins, No. of:3; Power, Pd:1040W; Termination Type:Through Hole; Thermal resistance, junction to case a:0.12°C/W; Transistor polarity:N; Voltage, Vds max:500V; Time, trr max:200ns
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFK80N50P
DISTI # V99:2348_15876949
IXYS CorporationTrans MOSFET N-CH 500V 80A 3-Pin(3+Tab) TO-264
RoHS: Compliant
9
  • 100:$12.4789
  • 25:$13.5710
  • 1:$16.1110
IXFK80N50P
DISTI # V36:1790_15876949
IXYS CorporationTrans MOSFET N-CH 500V 80A 3-Pin(3+Tab) TO-264
RoHS: Compliant
0
    IXFK80N50P
    DISTI # IXFK80N50P-ND
    IXYS CorporationMOSFET N-CH 500V 80A TO-264
    RoHS: Compliant
    Min Qty: 1
    Container: Tube
    On Order
    • 500:$10.6720
    • 100:$12.5120
    • 25:$13.6160
    • 10:$14.7200
    • 1:$16.1900
    IXFK80N50P
    DISTI # 32436170
    IXYS CorporationTrans MOSFET N-CH 500V 80A 3-Pin(3+Tab) TO-264
    RoHS: Compliant
    9
    • 100:$13.4148
    • 25:$14.5888
    • 1:$17.3193
    IXFK80N50P
    DISTI # 747-IXFK80N50P
    IXYS CorporationMOSFET 500V 80A
    RoHS: Compliant
    0
    • 1:$16.1900
    • 10:$14.9000
    • 25:$13.6100
    • 50:$13.0600
    • 100:$12.5100
    • 250:$12.1000
    • 500:$11.6900
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    IXFK80N50Q3

    Mfr.#: IXFK80N50Q3

    OMO.#: OMO-IXFK80N50Q3

    MOSFET Q3Class HiPerFET Pwr MOSFET 500V/80A
    IXFK80N50P

    Mfr.#: IXFK80N50P

    OMO.#: OMO-IXFK80N50P

    MOSFET 500V 80A
    IXFK88N20Q

    Mfr.#: IXFK88N20Q

    OMO.#: OMO-IXFK88N20Q

    MOSFET 88 Amps 200V 0.028W Rds
    IXFK80N20S

    Mfr.#: IXFK80N20S

    OMO.#: OMO-IXFK80N20S-1190

    Nuevo y original
    IXFK80N50

    Mfr.#: IXFK80N50

    OMO.#: OMO-IXFK80N50-1190

    Nuevo y original
    IXFK80N65X2

    Mfr.#: IXFK80N65X2

    OMO.#: OMO-IXFK80N65X2-IXYS-CORPORATION

    MOSFET N-CH 650V 80A TO-264
    IXFK80N10Q

    Mfr.#: IXFK80N10Q

    OMO.#: OMO-IXFK80N10Q-IXYS-CORPORATION

    MOSFET N-CH TO-264AA
    IXFK88N20Q

    Mfr.#: IXFK88N20Q

    OMO.#: OMO-IXFK88N20Q-IXYS-CORPORATION

    MOSFET 88 Amps 200V 0.028W Rds
    IXFK80N20

    Mfr.#: IXFK80N20

    OMO.#: OMO-IXFK80N20-IXYS-CORPORATION

    MOSFET 80 Amps 200V 0.03 Rds
    Disponibilidad
    Valores:
    Available
    En orden:
    3500
    Ingrese la cantidad:
    El precio actual de IXFK80N50P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    16,01 US$
    16,01 US$
    10
    15,21 US$
    152,08 US$
    100
    14,41 US$
    1 440,72 US$
    500
    13,61 US$
    6 803,40 US$
    1000
    12,81 US$
    12 806,40 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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