IXFK80N50Q3 vs IXFK80N50P vs IXFK80N50

 
PartNumberIXFK80N50Q3IXFK80N50PIXFK80N50
DescriptionMOSFET Q3Class HiPerFET Pwr MOSFET 500V/80AMOSFET 500V 80A
ManufacturerIXYSIXYS-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleThrough HoleThrough Hole-
Package / CaseTO-264-3TO-264-3-
Number of Channels1 Channel1 Channel-
Transistor PolarityN-ChannelN-Channel-
Vds Drain Source Breakdown Voltage500 V500 V-
Id Continuous Drain Current80 A80 A-
Rds On Drain Source Resistance65 mOhms65 mOhms-
Vgs Gate Source Voltage30 V30 V-
Qg Gate Charge200 nC--
Pd Power Dissipation1.25 kW1040 W-
ConfigurationSingleSingle-
TradenameHiPerFETHiPerFET-
PackagingTubeTube-
SeriesIXFK80N50IXFK80N50-
Transistor Type1 N-Channel1 N-Channel-
BrandIXYSIXYS-
Product TypeMOSFETMOSFET-
Rise Time250 ns27 ns-
Factory Pack Quantity2525-
SubcategoryMOSFETsMOSFETs-
Unit Weight0.264555 oz0.352740 oz-
Minimum Operating Temperature-- 55 C-
Maximum Operating Temperature-+ 150 C-
Channel Mode-Enhancement-
Height-26.16 mm-
Length-19.96 mm-
Width-5.13 mm-
Forward Transconductance Min-70 S-
Fall Time-16 ns-
Typical Turn Off Delay Time-70 ns-
Typical Turn On Delay Time-25 ns-
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