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TK31J60W,S1VQ

TK31J60W,S1VQ
Mfr. #:
TK31J60W,S1VQ
Fabricante:
Toshiba
Descripción:
MOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
TK31J60W,S1VQ Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
TK31J60W,S1VQ DatasheetTK31J60W,S1VQ Datasheet (P4-P6)TK31J60W,S1VQ Datasheet (P7-P9)TK31J60W,S1VQ Datasheet (P10)
ECAD Model:
Más información:
TK31J60W,S1VQ más información
Atributo del producto
Valor de atributo
Fabricante:
Toshiba
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-3PN-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
30.8 A
Rds On - Resistencia de la fuente de drenaje:
88 mOhms
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
105 nC
Pd - Disipación de energía:
230 W
Configuración:
Único
Nombre comercial:
DTMOSIV
Altura:
20 mm
Longitud:
15.5 mm
Serie:
TK31J60W
Tipo de transistor:
1 N-Channel
Ancho:
4.5 mm
Marca:
Toshiba
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
25
Subcategoría:
MOSFET
Unidad de peso:
0.245577 oz
Tags
TK31J60W,S, TK31J, TK31, TK3
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
X35 Pb-F Power Mosfet Transistor To-3Pn(Os) Moq=50 Pd=230W F=1Mhz
***ical
Trans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-3PN Bag/Tube
***et
DTMOSIV_600V_88MOHM MAX(VGS=10V)_TO-3P(N)
Gen-4 Super Junction DTMOS MOSFETs
Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process, DTMOSIV which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on) chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.
Parte # Mfg. Descripción Valores Precio
TK31J60W,S1VQ
DISTI # V99:2348_13896269		Toshiba America Electronic ComponentsTrans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-3PN Bag/Tube25
  • 2500:$4.3030
  • 1000:$4.4470
  • 500:$4.9850
  • 250:$5.4040
  • 100:$5.8070
  • 25:$6.3230
  • 10:$6.8150
  • 1:$7.4270
TK31J60W,S1VQ
DISTI # TK31J60WS1VQ-ND		Toshiba America Electronic ComponentsMOSFET N CH 600V 30.8A TO-3P(N)
RoHS: Compliant
Min Qty: 1
Container: Tube		23In Stock
  • 500:$5.7629
  • 100:$6.8783
  • 25:$7.6220
  • 1:$9.3000
TK31J60W,S1VQ
DISTI # 30524811		Toshiba America Electronic ComponentsTrans MOSFET N-CH Si 600V 30.8A 3-Pin(3+Tab) TO-3PN Bag/Tube25
  • 25:$6.3120
  • 10:$6.8030
  • 2:$7.4120
TK31J60WS1VQ
DISTI # TK31J60W,S1VQ		Toshiba America Electronic ComponentsTrans MOSFET N 600V 30.8A 3-Pin SC-65 Tube - Rail/Tube (Alt: TK31J60W,S1VQ)
RoHS: Compliant
Min Qty: 25
Container: Tube		Americas - 0
  • 25:$5.1900
  • 50:$4.8900
  • 100:$4.6900
  • 150:$4.3900
  • 250:$4.2900
TK31J60W,S1VQ
DISTI # 757-TK31J60WS1VQ		Toshiba America Electronic ComponentsMOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC
RoHS: Compliant		23
  • 1:$8.4500
  • 10:$7.6100
  • 25:$6.9300
  • 100:$6.2600
  • 250:$5.7500
  • 500:$5.2400
  • 1000:$4.5700
TK31J60WS1VQ(OToshiba America Electronic Components 50
    TK31J60W,S1VQ(O)
    DISTI # C1S751201082507    		Toshiba America Electronic ComponentsMOSFETs55
    • 50:$11.9000
    • 10:$14.2000
    • 5:$14.9000
    TK31J60W,S1VQ
    DISTI # C1S751200875760    		Toshiba America Electronic ComponentsMOSFETs
    RoHS: Compliant    		25
    • 25:$6.3120
    • 10:$6.8030
    • 1:$7.4120
    TK31J60W,S1VQToshiba America Electronic ComponentsMOSFET N-Ch 30.8A 230W FET 600V 3000pF 86nC
    RoHS: Compliant    		Americas -
      TK31J60WS1VQToshiba America Electronic ComponentsMOSFET POWER MOSFET TRANSISTOR
      RoHS: Compliant      		Americas -
        Imagen Parte # Descripción
        FCB199N65S3

        Mfr.#: FCB199N65S3

        OMO.#: OMO-FCB199N65S3

        		 MOSFET SuperFET3 650V 199mOhm D2PAK PKG
        FCP190N60E

        Mfr.#: FCP190N60E

        OMO.#: OMO-FCP190N60E

        		 MOSFET 600V N-CHAN MOSFET
        FCD360N65S3R0

        Mfr.#: FCD360N65S3R0

        OMO.#: OMO-FCD360N65S3R0

        		 MOSFET SUPERFET3 650V 10A 360 mOhm
        FCP190N60E

        Mfr.#: FCP190N60E

        OMO.#: OMO-FCP190N60E-ON-SEMICONDUCTOR

        		 MOSFET N-CH 600V TO220-3
        FCB199N65S3

        Mfr.#: FCB199N65S3

        OMO.#: OMO-FCB199N65S3-ON-SEMICONDUCTOR

        		 MOSFET N-CH 650V 14A D2PAK
        FCD360N65S3R0

        Mfr.#: FCD360N65S3R0

        OMO.#: OMO-FCD360N65S3R0-ON-SEMICONDUCTOR

        		 SUPERFET3 650V DPAK
        Disponibilidad
        Valores:
        18
        En orden:
        2001
        Ingrese la cantidad:
        El precio actual de TK31J60W,S1VQ es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        8,45 US$
        8,45 US$
        10
        7,61 US$
        76,10 US$
        25
        6,93 US$
        173,25 US$
        100
        6,26 US$
        626,00 US$
        250
        5,75 US$
        1 437,50 US$
        500
        5,24 US$
        2 620,00 US$
        1000
        4,57 US$
        4 570,00 US$
        2500
        4,40 US$
        11 000,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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