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SI5517DU-T1-GE3

SI5517DU-T1-GE3
Mfr. #:
SI5517DU-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N/P-CH 20V 6A CHIPFET
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI5517DU-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET: matrices
Serie
TrincheraFETR
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI5517DU-GE3
Estilo de montaje
SMD / SMT
Paquete-Estuche
PowerPAKR ChipFET Dual
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
PowerPAKR ChipFet Dual
Configuración
1 N-Channel 1 P-Channel
Tipo FET
Canal N y P
Potencia máxima
8.3W
Tipo transistor
1 N-Channel 1 P-Channel
Drenaje-a-fuente-voltaje-Vdss
20V
Entrada-Capacitancia-Ciss-Vds
520pF @ 10V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
6A
Rds-On-Max-Id-Vgs
39 mOhm @ 4.4A, 4.5V
Vgs-th-Max-Id
1V @ 250μA
Puerta-Carga-Qg-Vgs
16nC @ 8V
Disipación de potencia Pd
2.3 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
10 ns 55 ns
Hora de levantarse
65 ns 35 ns
Vgs-Puerta-Fuente-Voltaje
8 V
Id-corriente-de-drenaje-continua
7.2 A
Vds-Drain-Source-Breakdown-Voltage
20 V
Resistencia a la fuente de desagüe de Rds
32 mOhms 60 mOhms
Polaridad del transistor
Canal N Canal P
Tiempo de retardo de apagado típico
40 ns 40 ns
Tiempo de retardo de encendido típico
20 ns 8 ns
Modo de canal
Mejora
Tags
SI5517, SI551, SI55, SI5
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R
***Components
On a Reel of 3000, Dual N/P-Channel-Channel MOSFET, 3.7 A, 7.2 A, 20 V, 8-Pin PowerPAK ChipFET Vishay SI5517DU-T1-GE3
***ure Electronics
MOSFET 20V 6.0A 8.3W 39/72mohm @ 4.5V
***ied Electronics & Automation
Trans MOSFET N/P-CH 20V 7.2A/4.6
***i-Key
MOSFET N/P-CH 20V 6A CHIPFET
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N/P Channel; Rds(on) Test Voltage, Vgs:8V; Package/Case:PowerPAK ChipFET Dual; Termination Type:SMD; Operating Temperature Range:-55°C to +150°C ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
SI5517DU-T1-GE3
DISTI # V36:1790_09216229		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R
RoHS: Compliant		3000
  • 3000:$0.4654
SI5517DU-T1-GE3
DISTI # V72:2272_09216229		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R
RoHS: Compliant		10
  • 10:$0.7040
  • 1:$0.9199
SI5517DU-T1-GE3
DISTI # SI5517DU-T1-GE3CT-ND		Vishay SiliconixMOSFET N/P-CH 20V 6A CHIPFET
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5739In Stock
  • 1000:$0.5778
  • 500:$0.7319
  • 100:$0.9438
  • 10:$1.1940
  • 1:$1.3500
SI5517DU-T1-GE3
DISTI # SI5517DU-T1-GE3DKR-ND		Vishay SiliconixMOSFET N/P-CH 20V 6A CHIPFET
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5739In Stock
  • 1000:$0.5778
  • 500:$0.7319
  • 100:$0.9438
  • 10:$1.1940
  • 1:$1.3500
SI5517DU-T1-GE3
DISTI # SI5517DU-T1-GE3TR-ND		Vishay SiliconixMOSFET N/P-CH 20V 6A CHIPFET
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 3000:$0.5236
SI5517DU-T1-GE3
DISTI # 30306435		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R
RoHS: Compliant		3000
  • 3000:$0.4654
SI5517DU-T1-GE3
DISTI # SI5517DU-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R (Alt: SI5517DU-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Asia - 0
  • 3000:$0.4282
  • 6000:$0.3294
  • 9000:$0.2621
  • 15000:$0.2215
  • 30000:$0.2039
  • 75000:$0.1976
  • 150000:$0.1917
SI5517DU-T1-GE3
DISTI # SI5517DU-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R - Tape and Reel (Alt: SI5517DU-T1-GE3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.4939
  • 6000:$0.4799
  • 12000:$0.4599
  • 18000:$0.4469
  • 30000:$0.4349
SI5517DU-T1-GE3
DISTI # SI5517DU-T1-GE3		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R (Alt: SI5517DU-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€0.8369
  • 6000:€0.6009
  • 12000:€0.4869
  • 18000:€0.4309
  • 30000:€0.4119
SI5517DU-T1-GE3
DISTI # 16P3788		Vishay IntertechnologiesDUAL N/P CH MOSFET, 20V, POWERPAK, FULL REEL,Transistor Polarity:N and P Channel,Continuous Drain Current Id:7.2A,Drain Source Voltage Vds:20V,On Resistance Rds(on):32mohm,Rds(on) Test Voltage Vgs:8V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
  • 1:$0.4770
  • 3000:$0.4740
  • 6000:$0.4510
  • 12000:$0.4000
SI5517DU-T1-GE3
DISTI # 09X6441		Vishay IntertechnologiesMOSFET, N & P CHANNEL, 20V, 6A, POWERPAK-8,Transistor Polarity:N and P Channel,Continuous Drain Current Id:6A,Drain Source Voltage Vds:20V,On Resistance Rds(on):0.032ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1V , RoHS Compliant: Yes0
  • 1:$0.9320
  • 10:$0.9030
  • 100:$0.7120
  • 250:$0.6770
  • 500:$0.6320
  • 1000:$0.5060
SI5517DU-T1-GE3
DISTI # 70616987		Vishay SiliconixTrans MOSFET N/P-CH 20V 7.2A/4.6
RoHS: Compliant		0
  • 300:$0.7700
  • 600:$0.6500
  • 1500:$0.5700
  • 3000:$0.5400
SI5517DU-T1-GE3
DISTI # 781-SI5517DU-GE3		Vishay IntertechnologiesMOSFET 20V Vds 8V Vgs PowerPAK ChipFET
RoHS: Compliant		3065
  • 1:$1.1900
  • 10:$0.9800
  • 100:$0.7520
  • 500:$0.6470
  • 1000:$0.5100
  • 3000:$0.4760
SI5517DU-T1-GE3
DISTI # 8181334P		Vishay IntertechnologiesTRANS MOSFET N/P-CH 20V 7.2A/4.6, RL3160
  • 200:£0.2510
SI5517DUT1GE3Vishay Intertechnologies 
RoHS: Compliant		Europe - 6000
    SI5517DU-T1-GE3
    DISTI # C1S803601298171    		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R
    RoHS: Compliant    		3000
    • 3000:$0.4654
    SI5517DU-T1-GE3
    DISTI # C1S806001096569    		Vishay IntertechnologiesTrans MOSFET N/P-CH 20V 7.2A/4.6A 8-Pin PowerPAK ChipFET T/R
    RoHS: Compliant    		10
    • 10:$0.7967
    Imagen Parte # Descripción
    SI5517DU-T1-GE3

    Mfr.#: SI5517DU-T1-GE3

    OMO.#: OMO-SI5517DU-T1-GE3

    		 MOSFET 20V Vds 8V Vgs PowerPAK ChipFET
    SI5517DU-T1-E3

    Mfr.#: SI5517DU-T1-E3

    OMO.#: OMO-SI5517DU-T1-E3-VISHAY

    		 MOSFET N/P-CH 20V 6A CHIPFET
    SI5517DU-T1-GE3

    Mfr.#: SI5517DU-T1-GE3

    OMO.#: OMO-SI5517DU-T1-GE3-VISHAY

    		 MOSFET N/P-CH 20V 6A CHIPFET
    SI5517DU-T1-GE3DKR-ND

    Mfr.#: SI5517DU-T1-GE3DKR-ND

    OMO.#: OMO-SI5517DU-T1-GE3DKR-ND-1190

    		 Nuevo y original
    Disponibilidad
    Valores:
    Available
    En orden:
    3500
    Ingrese la cantidad:
    El precio actual de SI5517DU-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    0,64 US$
    0,64 US$
    10
    0,60 US$
    6,03 US$
    100
    0,57 US$
    57,15 US$
    500
    0,54 US$
    269,85 US$
    1000
    0,51 US$
    508,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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