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| PartNumber | SI5517DU-T1-GE3 | SI5517DU-T1-E3 | SI5517DU-T1-GE3DKR-ND |
| Description | MOSFET 20V Vds 8V Vgs PowerPAK ChipFET | MOSFET N/P-CH 20V 6A CHIPFET | |
| Manufacturer | Vishay | Vishay Siliconix | - |
| Product Category | MOSFET | FETs - Arrays | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | PowerPAK-ChipFET-Dual-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 6 A | - | - |
| Rds On Drain Source Resistance | 39 mOhms, 72 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 400 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 16 nC, 14 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 8.3 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Digi-ReelR | - |
| Series | SI54 | TrenchFETR | - |
| Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 22 S, 9 S | - | - |
| Fall Time | 10 ns, 55 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 65 ns, 35 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 40 ns, 40 ns | - | - |
| Typical Turn On Delay Time | 20 ns, 8 ns | - | - |
| Part # Aliases | SI5517DU-GE3 | - | - |
| Package Case | - | PowerPAKR ChipFET Dual | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | PowerPAKR ChipFet Dual | - |
| FET Type | - | N and P-Channel | - |
| Power Max | - | 8.3W | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 520pF @ 10V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 6A | - |
| Rds On Max Id Vgs | - | 39 mOhm @ 4.4A, 4.5V | - |
| Vgs th Max Id | - | 1V @ 250μA | - |
| Gate Charge Qg Vgs | - | 16nC @ 8V | - |
| Fabricante | Parte # | Descripción | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SI5517DU-T1-GE3 | MOSFET 20V Vds 8V Vgs PowerPAK ChipFET | |
Vishay |
SI5517DU-T1-E3 | MOSFET N/P-CH 20V 6A CHIPFET | |
| SI5517DU-T1-GE3 | MOSFET N/P-CH 20V 6A CHIPFET | ||
| SI5517DU-T1-GE3DKR-ND | Nuevo y original |