OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

FDC6308P

FDC6308P
Mfr. #:
FDC6308P
Fabricante:
Rochester Electronics, LLC
Descripción:
MOSFET DISC BY MFG 2/02
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDC6308P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
FDC630, FDC63, FDC6, FDC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Dual P-channel 2.5V Specified PowerTrench MOSFET
***S.I.T. Europe - USA - Asia
Small Signal Field-Effect Transistor, 1.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
*** Services
CoC and 2-years warranty / RFQ for pricing
***et Europe
Trans MOSFET N/P-CH 20V 3A/2.2A 6-Pin TSOT-23 T/R
***ure Electronics
Dual N/P-Channel 20 V 70 mOhm Surface Mount PowerTrench Mosfet - SSOT-6
***r Electronics
Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET
***ment14 APAC
MOSFET, DUAL, NP, SMD, SUPERSOT-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:20V; On Resistance Rds(on):70mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:960mW; Transistor Case Style:SuperSOT; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:3A; Package / Case:SuperSOT-6; Power Dissipation Pd:960mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:900mV; Voltage Vgs Rds on Measurement:4.5V
***rchild Semiconductor
These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical.
***emi
P-Channel PowerTrench® MOSFET and Integrated Schottky Diode 20V -2.2A, 150mΩ
***ark
Transistor,mosfet,p-Channel,20V V(Br)Dss,2.2A I(D),so Rohs Compliant: Yes
***el Electronic
Chip Resistor - Surface Mount 120Ohm 0603 (1608 Metric) ±5% ±200ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 120 OHM 5% 1/4W 0603
***rchild Semiconductor
The FDC6392S combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with very low forward voltage drop Schottky barrier rectifier in an SSOT-6 package.This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies.
*** Source Electronics
MOSFET N/P-CH 20V 2.7A 6-TSOP / Trans MOSFET N/P-CH Si 20V 2.7A/2.2A 6-Pin TSOP T/R
***ernational Rectifier
20V Dual N- and P- Channel HEXFET Power MOSFET in a Micro 6 package
***ment14 APAC
MOSFET, DUAL, NP, TSOP-6; Transistor Polarity:N and P Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):135mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:1.25V; Power Dissipation Pd:960mW; Transistor Case Style:TSOP; No. of Pins:6; SVHC:No SVHC (20-Jun-2011); Application Code:LowR; Cont Current Id N Channel:2.7A; Cont Current Id P Channel:2.2A; Current Id Max:2.7A; Junction to Case Thermal Resistance A:62.5°C/W; On State Resistance Channel 1:90mohm; On State Resistance P Channel 2:135mohm; Package / Case:TSOP; Power Dissipation Pd:960mW; Power Dissipation Pd:960mW; Pulse Current Idm:9A; Pulse Current Idm N Channel:11A; Pulse Current Idm P Channel:9A; Termination Type:SMD; Voltage Vds N Channel 1:20V; Voltage Vds P Channel 1:20V; Voltage Vds Typ:20V; Voltage Vgs Max:1.25V; Voltage Vgs Rds on Measurement:4.5V
***ure Electronics
ZXMN2A01 Series 20 V 0.12 Ohm N-Channel Enhancement Mode MOSFET - SOT-23-3
***et
Trans MOSFET N-CH 20V 2.2A 3-Pin SOT-23 T/R
***ark
N CHANNEL MOSFET, 20V, 2.2A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current, Id:2.2A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):0.12ohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:700mV ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):120mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.2A; Current Temperature:25°C; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; On State Resistance Max:120mohm; Package / Case:SOT-23; Power Dissipation Pd:625mW; Power Dissipation Pd:806mW; Power Dissipation Ptot Max:625mW; Pulse Current Idm:8A; SMD Marking:7N2; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:12V; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Min:700mV
***ure Electronics
Dual N-Channel 20 V 0.125 Ohms Surface Mount Power Mosfet - TSOP-6
***et Europe
Transistor MOSFET Array Dual N-CH 20V 2A 6-Pin TSOP T/R
***ark
Transistor; Transistor Type:MOSFET; Transistor Polarity:Dual N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:2400mA; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:12V ;RoHS Compliant: Yes
***nell
MOSFET, DUAL N CH, 20V, 0.1OHM, 2A, TSOP; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.1ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:830mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TSOP; No. of Pins:6; MSL:-
***ure Electronics
DMP2104V Series P-Channel 20 V 150 mOhm MosFet Surface Mount - SOT-563-6
***ical
Trans MOSFET P-CH 20V 1.9A Automotive 6-Pin SOT-563 T/R
***ark
Mosfet, P Channel, -20V, -860Ma, Sot-563; Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:860Ma; On Resistance Rds(On):0.15Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5Vrohs Compliant: Yes
***nell
MOSFET P-CHANNEL SOT-563; Transistor Polarity: P Channel; Continuous Drain Current Id: -950mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.15ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1V; Power Dissipation Pd: 170mW; Transistor Case Style: SOT-563; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019); Current Id Max: -860mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: -20V; Voltage Vgs Max: 12V; Voltage Vgs Rds on Measurement: -4.5V
Parte # Mfg. Descripción Valores Precio
FDC6308P
DISTI # 512-FDC6308P		ON SemiconductorMOSFET DISC BY MFG 2/02
RoHS: Not compliant		0
    FDC6308PFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 1.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Compliant    		42000
    • 1000:$0.5300
    • 500:$0.5500
    • 100:$0.5800
    • 25:$0.6000
    • 1:$0.6500
    FDC6308PFairchild Semiconductor CorporationMOSFET Transistor, Matched Pair, P-Channel, TSOP2681
    • 1363:$0.5170
    • 305:$0.5875
    • 1:$1.8800
    FDC6308PFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 1.7A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    RoHS: Not Compliant    		1970
      Imagen Parte # Descripción
      FDC6332L

      Mfr.#: FDC6332L

      OMO.#: OMO-FDC6332L

      		 MOSFET 1.8V P-Ch MOSFET Common Source
      FDC6312P-NL

      Mfr.#: FDC6312P-NL

      OMO.#: OMO-FDC6312P-NL-1190

      		 Nuevo y original
      FDC6323L , LP2980AIM5-2.

      Mfr.#: FDC6323L , LP2980AIM5-2.

      OMO.#: OMO-FDC6323L-LP2980AIM5-2--1190

      		 Nuevo y original
      FDC6324L , LP2980AIM5-2.

      Mfr.#: FDC6324L , LP2980AIM5-2.

      OMO.#: OMO-FDC6324L-LP2980AIM5-2--1190

      		 Nuevo y original
      FDC6324L/ 324

      Mfr.#: FDC6324L/ 324

      OMO.#: OMO-FDC6324L-324-1190

      		 Nuevo y original
      FDC6325L , 1N485BTR

      Mfr.#: FDC6325L , 1N485BTR

      OMO.#: OMO-FDC6325L-1N485BTR-1190

      		 Nuevo y original
      FDC6326L , LM4040DEX3-4.

      Mfr.#: FDC6326L , LM4040DEX3-4.

      OMO.#: OMO-FDC6326L-LM4040DEX3-4--1190

      		 Nuevo y original
      FDC6327C , 1N486B T50A

      Mfr.#: FDC6327C , 1N486B T50A

      OMO.#: OMO-FDC6327C-1N486B-T50A-1190

      		 Nuevo y original
      FDC6331L.

      Mfr.#: FDC6331L.

      OMO.#: OMO-FDC6331L--1190

      		 INTEGRATED LOAD SWITCH, 8V, SSOT-6, FULL REEL
      FDC654P NL

      Mfr.#: FDC654P NL

      OMO.#: OMO-FDC654P-NL-1190

      		 Nuevo y original
      Disponibilidad
      Valores:
      Available
      En orden:
      1000
      Ingrese la cantidad:
      El precio actual de FDC6308P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,00 US$
      0,00 US$
      10
      0,00 US$
      0,00 US$
      100
      0,00 US$
      0,00 US$
      500
      0,00 US$
      0,00 US$
      1000
      0,00 US$
      0,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
      Empezar con
      Nuevos productos
      More Newest Products
      Top