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IXFN60N80P

IXFN60N80P
Mfr. #:
IXFN60N80P
Fabricante:
Littelfuse
Descripción:
MOSFET DIODE Id54 BVdass800
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXFN60N80P Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN60N80P DatasheetIXFN60N80P Datasheet (P4)
ECAD Model:
Más información:
IXFN60N80P más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
Montaje en chasis
Paquete / Caja:
SOT-227-4
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
53 A
Rds On - Resistencia de la fuente de drenaje:
140 mOhms
Vgs - Voltaje puerta-fuente:
30 V
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
1040 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Altura:
9.6 mm
Longitud:
38.23 mm
Serie:
IXFN60N80
Tipo de transistor:
1 N-Channel
Ancho:
25.42 mm
Marca:
IXYS
Otoño:
26 ns
Tipo de producto:
MOSFET
Hora de levantarse:
29 ns
Cantidad de paquete de fábrica:
10
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
110 ns
Tiempo típico de retardo de encendido:
36 ns
Unidad de peso:
1.058219 oz
Tags
IXFN60, IXFN6, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***p One Stop Global
Trans MOSFET N-CH 800V 53A 4-Pin SOT-227B
***ukat
N-Ch 800V 53A 1040W 0,14R SOT227B
***ark
Mosfet, N Channel, 800V, 53A, Sot-227B; Transistor Polarity:n Channel; Drain Source Voltage Vds:800V; Continuous Drain Current Id:53A; On Resistance Rds(On):0.14Ohm; Transistor Mounting:module; Rds(On) Test Voltage Vgs:10V; Msl:- Rohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
HiPerFET™ Power MOSFETs
IXYS  Polar HT™/HV™ HiPerFET™ Power MOSFETs from IXYS are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Parte # Mfg. Descripción Valores Precio
IXFN60N80P
DISTI # V79:2366_19815502		IXYS CorporationTrans MOSFET N-CH 800V 53A 4-Pin SOT-227B
RoHS: Compliant		3
  • 500:$18.7000
  • 250:$19.5200
  • 100:$21.4800
  • 25:$23.3400
  • 10:$25.6400
  • 1:$27.9600
IXFN60N80P
DISTI # V36:1790_15877430		IXYS CorporationTrans MOSFET N-CH 800V 53A 4-Pin SOT-227B
RoHS: Compliant		0
  • 5000:$16.3700
  • 1000:$18.0100
  • 100:$21.8300
  • 10:$22.5300
IXFN60N80P
DISTI # IXFN60N80P-ND		IXYS CorporationMOSFET N-CH 800V 53A SOT-227B
RoHS: Compliant
Min Qty: 1
Container: Tube		161In Stock
  • 500:$19.3890
  • 100:$22.1990
  • 30:$23.8850
  • 10:$25.9930
  • 1:$28.1000
IXFN60N80P
DISTI # 26703217		IXYS CorporationTrans MOSFET N-CH 800V 53A 4-Pin SOT-227B
RoHS: Compliant		3
  • 1:$27.9600
IXFN60N80P
DISTI # 58M7624		IXYS CorporationMOSFET, N CHANNEL, 800V, 53A, SOT-227B,Transistor Polarity:N Channel,Continuous Drain Current Id:53A,Drain Source Voltage Vds:800V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,MSL:- RoHS Compliant: Yes10
  • 1:$15.2400
  • 5:$15.2400
  • 10:$15.2400
  • 25:$15.2400
  • 50:$15.2400
  • 100:$15.2400
  • 250:$15.2400
IXFN60N80P
DISTI # 747-IXFN60N80P		IXYS CorporationMOSFET DIODE Id54 BVdass800
RoHS: Compliant		99
  • 1:$28.1000
  • 5:$26.7000
  • 10:$25.9900
  • 25:$23.8800
  • 50:$22.8700
  • 100:$22.1900
  • 200:$20.3700
IXFN60N80PIXYS Corporation53 A, 800 V, 0.14 ohm, N-CHANNEL, Si, POWER, MOSFET76
  • 64:$15.1560
  • 31:$15.7875
  • 1:$16.4190
IXFN60N80P
DISTI # 194350		IXYS CorporationMOSFET N-CHANNEL 800V 53A SOT227B, EA558
  • 20:£16.5400
  • 10:£16.8800
  • 5:£17.4900
  • 2:£18.3100
  • 1:£20.3400
IXFN60N80PIXYS Corporation 300
    IXFN60N80P
    DISTI # IXFN60N80P    		IXYS CorporationModule,single transistor,800V,53A,SOT227B,Ugs: ±30V,screw8
    • 10:$23.0900
    • 3:$26.2400
    • 1:$29.0500
    IXFN60N80P
    DISTI # IXFN60N80P    		IXYS CorporationN-Ch 800V 53A 1040W 0,14R SOT227B
    RoHS: Compliant    		48
    • 1:€22.2000
    • 5:€19.2000
    • 10:€18.2000
    • 25:€17.5500
    IXFN60N80P
    DISTI # 1427326    		IXYS CorporationMOSFET, N, SOT-227B168
    • 100:£16.3400
    • 50:£18.6900
    • 10:£19.1600
    • 5:£21.8200
    • 1:£22.5300
    IXFN60N80P
    DISTI # 1427326    		IXYS CorporationMOSFET, N, SOT-227B
    RoHS: Compliant    		171
    • 100:$33.4600
    • 30:$36.0000
    • 10:$39.1800
    • 1:$42.3500
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    Disponibilidad
    Valores:
    99
    En orden:
    2082
    Ingrese la cantidad:
    El precio actual de IXFN60N80P es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    28,10 US$
    28,10 US$
    5
    26,70 US$
    133,50 US$
    10
    25,99 US$
    259,90 US$
    25
    23,88 US$
    597,00 US$
    50
    22,87 US$
    1 143,50 US$
    100
    22,19 US$
    2 219,00 US$
    200
    20,37 US$
    4 074,00 US$
    500
    19,38 US$
    9 690,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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