IRL6372TRPBF

Mfr. #:: IRL6372TRPBF
Fabricante:: Infineon Technologies
Descripción:: MOSFET 2N-CH 30V 8.1A 8SOIC
Ciclo vital:: Nuevo de este fabricante.
Ficha de datos:: IRL6372TRPBF Ficha de datos
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Atributo del producto
Valor de atributo

Fabricante: Infineon Technologies

categoria de producto: FET: matrices

Serie: HEXFETR

embalaje: Embalaje alternativo de Digi-ReelR

Unidad de peso: 0.019048 oz

Estilo de montaje: SMD / SMT

Paquete-Estuche: 8-SOIC (0.154", 3.90mm Width)

Tecnología: Si

Temperatura de funcionamiento: -55°C ~ 150°C (TJ)

Tipo de montaje: Montaje superficial

Número de canales: 2 Channel

Paquete de dispositivo de proveedor: 8-SO

Configuración: Doble

Tipo FET: 2 N-Channel (Dual)

Potencia máxima: 2W

Tipo transistor: 2 N-Channel

Drenaje-a-fuente-voltaje-Vdss: 30V

Entrada-Capacitancia-Ciss-Vds: 1020pF @ 25V

Función FET: Puerta de nivel lógico

Corriente-Continuo-Drenaje-Id-25 ° C: 8.1A

Rds-On-Max-Id-Vgs: 17.9 mOhm @ 8.1A, 4.5V

Vgs-th-Max-Id: 1.1V @ 10μA

Puerta-Carga-Qg-Vgs: 11nC @ 4.5V

Disipación de potencia Pd: 2 W

Vgs-Puerta-Fuente-Voltaje: 12 V

Id-corriente-de-drenaje-continua: 8.1 A

Vds-Drain-Source-Breakdown-Voltage: 30 V

Resistencia a la fuente de desagüe de Rds: 17.9 mOhms

Polaridad del transistor: Canal N

Qg-Gate-Charge: 11 nC

Tags: IRL637, IRL63, IRL6, IRL

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IRL6372TRPBF Descripción

***ernational Rectifier: 30V Dual N-Channel Low Logic Level HEXFET Power MOSFET in a SO-8 Lead-Free package

***ure Electronics: Dual N-Channel 30 V 23 mOhm 11 nC HEXFET® Power Mosfet - SOIC-8

***et: Trans MOSFET N-CH 30V 8.1A 8-Pin SOIC T/R

***ineon: Benefits: RoHS Compliant; Compatible with Existing Surface Mount Techniques; Qualified MSL1; Dual N-Channel MOSFET | Target Applications: Battery Protection

***ment14 APAC: DUAL N CH HEXFET POWER MOSFET, 30V, 8.1A, SOIC-8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8.1A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.014ohm; Rds(on) Test Voltage Vgs:4.5V

Market price

Parte #	Mfg.	Descripción	Valores	Precio
IRL6372TRPBF DISTI # V72:2272_13889769	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.1A 8-Pin SOIC T/R RoHS: Compliant	1011	1000:$0.3136 500:$0.3276 250:$0.3640 100:$0.3764 25:$0.5195 10:$0.5220 1:$0.5956
IRL6372TRPBF DISTI # IRL6372TRPBFCT-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 8.1A 8SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	3927In Stock	1000:$0.4395 500:$0.5386 100:$0.7121 10:$0.9110 1:$1.0300
IRL6372TRPBF DISTI # IRL6372TRPBFDKR-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 8.1A 8SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	3927In Stock	1000:$0.4395 500:$0.5386 100:$0.7121 10:$0.9110 1:$1.0300
IRL6372TRPBF DISTI # IRL6372TRPBFTR-ND	Infineon Technologies AG	MOSFET 2N-CH 30V 8.1A 8SOIC RoHS: Compliant Min Qty: 4000 Container: Tape & Reel (TR)	On Order	4000:$0.3906
IRL6372TRPBF DISTI # 27125061	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.1A 8-Pin SOIC T/R RoHS: Compliant	4000	4000:$0.2514
IRL6372TRPBF DISTI # 26196158	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.1A 8-Pin SOIC T/R RoHS: Compliant	1011	1000:$0.3136 500:$0.3276 250:$0.3640 100:$0.3764 29:$0.5195
IRL6372TRPBF DISTI # IRL6372TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.1A 8-Pin SOIC T/R - Cut TR (SOS) (Alt: IRL6372TRPBF) RoHS: Compliant Min Qty: 1 Container: Cut Tape	Americas - 3946	1:$0.2659 40:$0.2649 100:$0.2639 200:$0.2639 500:$0.2629 1000:$0.2619 2000:$0.2619
IRL6372TRPBF DISTI # SP001569038	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.1A 8-Pin SOIC T/R (Alt: SP001569038) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Europe - 12000	4000:€0.3079 8000:€0.2519 16000:€0.2309 24000:€0.2129 40000:€0.1979
IRL6372TRPBF DISTI # IRL6372TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.1A 8-Pin SOIC T/R - Tape and Reel (Alt: IRL6372TRPBF) RoHS: Compliant Min Qty: 4000 Container: Reel	Americas - 0	4000:$0.2519 8000:$0.2429 16000:$0.2339 24000:$0.2259 40000:$0.2219
IRL6372TRPBF DISTI # IRL6372TRPBF	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.1A 8-Pin SOIC T/R (Alt: IRL6372TRPBF) RoHS: Compliant Min Qty: 4000 Container: Tape and Reel	Asia - 0	4000:$0.2723 8000:$0.2611 12000:$0.2576 20000:$0.2476 40000:$0.2444 100000:$0.2383 200000:$0.2325
IRL6372TRPBF DISTI # 13AC9258	Infineon Technologies AG	MOSFET, DUAL N CH, 30V, 8.1A, SOIC-8,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:8.1A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.014ohm,Rds(on) Test Voltage Vgs:4.5V,Threshold Voltage Vgs:1.1V,RoHS Compliant: Yes	3225	1:$0.8200 10:$0.6790 25:$0.5990 50:$0.5180 100:$0.4380 250:$0.4090 500:$0.3800 1000:$0.3510
IRL6372TRPBF DISTI # 942-IRL6372TRPBF	Infineon Technologies AG	MOSFET DUAL MOSFT 8.1A 2.5V 18mOhm drv cpbl RoHS: Compliant	34622	1:$0.8200 10:$0.6790 100:$0.4380 1000:$0.3510 4000:$0.2960
IRL6372TRPBF DISTI # 1301013P	Infineon Technologies AG	MOSFET DUAL N-CH 30V 8.1A SOIC8, RL	4150	125:£0.3170 500:£0.2850 1000:£0.2540 2500:£0.2280
IRL6372TRPBF DISTI # IRL6372TRPBF	Infineon Technologies AG	Transistor: N-MOSFET x2,unipolar,30V,8.1A,2.5W,SO8	1180	1:$0.6000 5:$0.4100 25:$0.3600 100:$0.3300 500:$0.3100
IRL6372TRPBF DISTI # IRL6372PBF-GURT	Infineon Technologies AG	2xN-LogL 30V 8,1A 2,0W 0,0179R SO8 RoHS: Compliant	0	50:€0.2625 100:€0.2225 500:€0.2025 2000:€0.1950
IRL6372TRPBF DISTI # 2726002	Infineon Technologies AG	MOSFET, DUAL N CH, 30V, 8.1A, SOIC-8 RoHS: Compliant	3255	1:$1.3100 10:$1.0800 100:$0.6930 1000:$0.5560 4000:$0.4690
IRL6372TRPBF DISTI # 2726002	Infineon Technologies AG	MOSFET, DUAL N CH, 30V, 8.1A, SOIC-8 RoHS: Compliant	3235	5:£0.5900 25:£0.5350 100:£0.3230 250:£0.3070 500:£0.2910
IRL6372TRPBF DISTI # C1S322000501872	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.1A 8-Pin SOIC T/R RoHS: Compliant	1011	250:$0.3640 100:$0.3764 25:$0.5195 10:$0.5220
IRL6372TRPBF DISTI # C1S327400982308	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.1A 8-Pin SOIC T/R RoHS: Compliant	5230	100:$0.3360 50:$0.4540 10:$0.6150
IRL6372TRPBF DISTI # C1S322000501881	Infineon Technologies AG	Trans MOSFET N-CH 30V 8.1A 8-Pin SOIC T/R RoHS: Compliant	4000	4000:$0.3370

Productos relacionados

Imagen	Parte #	Descripción
	Mfr.#: IRL6372TRPBF OMO.#: OMO-IRL6372TRPBF	MOSFET DUAL MOSFT 8.1A 2.5V 18mOhm drv cpbl
	Mfr.#: IRL6372PBF OMO.#: OMO-IRL6372PBF	MOSFET 30V DUAL N-CH LO LOGIC LEVEL
	Mfr.#: IRL6372 OMO.#: OMO-IRL6372-1190	Nuevo y original
	Mfr.#: IRL6372PBF OMO.#: OMO-IRL6372PBF-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 30V 8.1A 8SO
	Mfr.#: IRL6372TRPBF OMO.#: OMO-IRL6372TRPBF-INFINEON-TECHNOLOGIES	MOSFET 2N-CH 30V 8.1A 8SOIC

Disponibilidad

Valores:: Available
En orden:: 3000
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El precio actual de IRL6372TRPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]

Precio de referencia (USD)

Cantidad
Precio unitario
Ext. Precio

1: ~~0,33 US$~~; ~~0,33 US$~~

10: ~~0,32 US$~~; ~~3,16 US$~~

100: ~~0,30 US$~~; ~~29,91 US$~~

500: ~~0,28 US$~~; ~~141,25 US$~~

1000: ~~0,27 US$~~; ~~265,90 US$~~

Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.

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IRL6372TRPBF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes