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IRL6372PBF

IRL6372PBF
Mfr. #:
IRL6372PBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 30V DUAL N-CH LO LOGIC LEVEL
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRL6372PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
8.1 A
Rds On - Resistencia de la fuente de drenaje:
17.9 mOhms
Vgs - Voltaje puerta-fuente:
12 V
Qg - Carga de puerta:
11 nC
Pd - Disipación de energía:
2 W
Configuración:
Doble
Embalaje:
Tubo
Altura:
1.75 mm
Longitud:
4.9 mm
Tipo de transistor:
2 N-Channel
Ancho:
3.9 mm
Marca:
Infineon / IR
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
95
Subcategoría:
MOSFET
Parte # Alias:
SP001568406
Unidad de peso:
0.019048 oz
Tags
IRL637, IRL63, IRL6, IRL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 30 V 2.0 W 11 nC Hexfet Power Mosfet Surface Mount - SOIC-8
***ernational Rectifier
30V Dual N-Channel Low Logic Level HEXFET Power MOSFET in a SO-8 Lead-Free package
***et
Trans MOSFET N-CH 30V 8.1A 8-Pin SOIC Tube
***ied Electronics & Automation
MOSFET Dual N-Ch 30V 8.1A HEXFET SOIC8
***ineon
Benefits: RoHS Compliant; Compatible with Existing Surface Mount Techniques; Qualified MSL1; Dual N-Channel MOSFET | Target Applications: Battery Protection
***nell
MOSFET,NN CH,W DIODE,30V,8.1A,SO8; Transistor Polarity:Dual N Channel; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Continuous Drain Current Id:8.1A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.014ohm; Power Dissipation Pd:2W
Parte # Mfg. Descripción Valores Precio
IRL6372PBF
DISTI # IRL6372PBF-ND		Infineon Technologies AGMOSFET 2N-CH 30V 8.1A 8SO
RoHS: Compliant
Min Qty: 1
Container: Tube		Limited Supply - Call
    IRL6372PBF
    DISTI # 942-IRL6372PBF    		Infineon Technologies AGMOSFET 30V DUAL N-CH LO LOGIC LEVEL
    RoHS: Compliant    		0
      IRL6372TRPBF
      DISTI # IRL6372PBF-GURT      		Infineon Technologies AG2xN-LogL 30V 8,1A 2,0W 0,0179R SO8
      RoHS: Compliant      		0
      • 50:€0.2625
      • 100:€0.2225
      • 500:€0.2025
      • 2000:€0.1950
      IRL6372PBF
      DISTI # 1888167      		Infineon Technologies AGMOSFET,NN CH,W DIODE,30V,8.1A,SO8
      RoHS: Compliant      		0
      • 1:$1.3700
      • 10:$1.2000
      • 100:$0.9170
      • 500:$0.7250
      • 1000:$0.5800
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      IRL6372PBF

      Mfr.#: IRL6372PBF

      OMO.#: OMO-IRL6372PBF-INFINEON-TECHNOLOGIES

      		 MOSFET 2N-CH 30V 8.1A 8SO
      Disponibilidad
      Valores:
      Available
      En orden:
      1500
      Ingrese la cantidad:
      El precio actual de IRL6372PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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