SIRA22DP-T1-RE3

SIRA22DP-T1-RE3
Mfr. #:
SIRA22DP-T1-RE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 25V Vds 16V Vgs PowerPAK SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIRA22DP-T1-RE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIRA22DP-T1-RE3 DatasheetSIRA22DP-T1-RE3 Datasheet (P4-P6)SIRA22DP-T1-RE3 Datasheet (P7)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
25 V
Id - Corriente de drenaje continua:
60 A
Rds On - Resistencia de la fuente de drenaje:
1.17 mOhms
Vgs th - Voltaje umbral puerta-fuente:
2.2 V
Vgs - Voltaje puerta-fuente:
16 V, - 12 V
Qg - Carga de puerta:
45.5 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
83.3 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET, PowerPAK
Embalaje:
Carrete
Serie:
SEÑOR
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
89 S
Otoño:
25 ns
Tipo de producto:
MOSFET
Hora de levantarse:
61 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
40 ns
Tiempo típico de retardo de encendido:
37 ns
Tags
SIRA2, SIRA, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TrenchFET Gen IV Power MOSFET N-Channel Single 25V VDS +16V -12V VGS 60A ID 8-Pin PowerPAK SOIC T/R
***i-Key
MOSFET N-CH 25V 60A POWERPAKSO-8
***ark
N-CHANNEL 25-V (D-S) MOSFET
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 25V, 60A, 150DEG C, 83.3W; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.00063ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Pd:83.3W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CANAL N, 25V, 60A, 150°C, 83,3W; Polarità Transistor:Canale N; Corrente Continua di Drain Id:60A; Tensione Drain Source Vds:25V; Resistenza di Attivazione Rds(on):0.00063ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.2V; Dissipazione di Potenza Pd:83.3W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
Parte # Mfg. Descripción Valores Precio
SIRA22DP-T1-RE3
DISTI # SIRA22DP-T1-RE3TR-ND
Vishay SiliconixMOSFET N-CH 25V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
6000In Stock
  • 15000:$0.5752
  • 6000:$0.5977
  • 3000:$0.6292
SIRA22DP-T1-RE3
DISTI # SIRA22DP-T1-RE3CT-ND
Vishay SiliconixMOSFET N-CH 25V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
6000In Stock
  • 1000:$0.6943
  • 500:$0.8795
  • 100:$1.0646
  • 10:$1.3660
  • 1:$1.5300
SIRA22DP-T1-RE3
DISTI # SIRA22DP-T1-RE3DKR-ND
Vishay SiliconixMOSFET N-CH 25V 60A POWERPAKSO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
6000In Stock
  • 1000:$0.6943
  • 500:$0.8795
  • 100:$1.0646
  • 10:$1.3660
  • 1:$1.5300
SIRA22DP-T1-RE3
DISTI # SIRA22DP-T1-RE3
Vishay IntertechnologiesTrenchFET Gen IV Power MOSFET N-Channel Single 25V VDS +16V -12V VGS 60A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIRA22DP-T1-RE3)
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.5479
  • 30000:$0.5629
  • 18000:$0.5789
  • 12000:$0.6039
  • 6000:$0.6229
SIRA22DP-T1-RE3
DISTI # 59AC7423
Vishay IntertechnologiesN-CHANNEL 25-V (D-S) MOSFET0
  • 10000:$0.5440
  • 6000:$0.5570
  • 4000:$0.5780
  • 2000:$0.6420
  • 1000:$0.7070
  • 1:$0.7370
SIRA22DP-T1-RE3
DISTI # 78-SIRA22DP-T1-RE3
Vishay IntertechnologiesMOSFET 25V Vds 16V Vgs PowerPAK SO-8
RoHS: Compliant
6000
  • 1:$1.4900
  • 10:$1.2300
  • 100:$0.9450
  • 500:$0.8130
  • 1000:$0.6410
  • 3000:$0.5990
  • 6000:$0.5690
  • 9000:$0.5470
SIRA22DP-T1-RE3
DISTI # 2932947
Vishay IntertechnologiesMOSFET, N-CH, 25V, 60A, 150DEG C, 83.3W
RoHS: Compliant
5979
  • 1000:$0.9650
  • 500:$1.0200
  • 250:$1.2100
  • 100:$1.4600
  • 10:$1.8600
  • 1:$2.2500
SIRA22DP-T1-RE3
DISTI # 2932947
Vishay IntertechnologiesMOSFET, N-CH, 25V, 60A, 150DEG C, 83.3W5994
  • 500:£0.5900
  • 250:£0.6380
  • 100:£0.6860
  • 10:£0.9380
  • 1:£1.2400
Imagen Parte # Descripción
SIRA22DP-T1-RE3

Mfr.#: SIRA22DP-T1-RE3

OMO.#: OMO-SIRA22DP-T1-RE3

MOSFET 25V Vds 16V Vgs PowerPAK SO-8
SIRA22DP-T1-RE3

Mfr.#: SIRA22DP-T1-RE3

OMO.#: OMO-SIRA22DP-T1-RE3-VISHAY

MOSFET N-CH 25V 60A POWERPAKSO-8
Disponibilidad
Valores:
Available
En orden:
1989
Ingrese la cantidad:
El precio actual de SIRA22DP-T1-RE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,49 US$
1,49 US$
10
1,23 US$
12,30 US$
100
0,94 US$
94,50 US$
500
0,81 US$
406,50 US$
1000
0,64 US$
641,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
Empezar con
Nuevos productos
  • -12 V and -20 V P-Channel Gen III MOSFETs
    Vishay's TrenchFET® MOSFETs features low on-resistance for -12 V and -20 V devices, allowing for lower voltage drops.
  • DG2788A Dual DPDT / Quad SPDT Analog Switch
    Vishay introduces the dual DPDT / quad SPDT analog switch featuring low resistance of 0.37 Ω at 2.7 V in the compact 2.6 mm x 1.8 mm x 0.55 mm miniQFN16 package.
  • Smart Load Switches
    Vishay's smart load switch features a simplified GPIO control can be used to implement power distribution and sequencing of multiple-sub-systems.
  • Compare SIRA22DP-T1-RE3
    SIRA20DPT1RE3 vs SIRA22DPT1RE3 vs SIRA24DPT1GE3
  • SUM70101EL 100 V P-Channel MOSFET
    Vishay Siliconix's SUM70101EL MOSFET has industry leading RDS(ON) (0.0101 Ω at -10 V and 0.015 Ω at -4.5 V) minimizes conduction loss and increases efficiency.
  • DGQ2788A AEC-Q100 Qualified Analog Switch
    The wide operation voltage range, low resistance, and high bandwidth of Vishay Siliconix's DGQ2788A make it ideal for a variety of design needs, simplifying the BOM.
Top