FDMS7620S

FDMS7620S
Mfr. #:
FDMS7620S
Fabricante:
ON Semiconductor
Descripción:
MOSFET 2N-CH 30V POWER56
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
FDMS7620S Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
FDMS7620S más información
Atributo del producto
Valor de atributo
Fabricante
Fairchild Semiconductor
categoria de producto
FET: matrices
Serie
PowerTrenchR
embalaje
Embalaje alternativo de Digi-ReelR
Unidad de peso
0.007443 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-PowerWDFN
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
Power56
Configuración
Doble fuente triple asimétrica de drenaje triple
Tipo FET
2 N-Channel (Dual)
Potencia máxima
1W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
608pF @ 15V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
10.1A, 12.4A
Rds-On-Max-Id-Vgs
20 mOhm @ 10.1A, 10V
Vgs-th-Max-Id
3V @ 250μA
Puerta-Carga-Qg-Vgs
11nC @ 10V
Disipación de potencia Pd
2.2 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
1.4 nS 1.5 nS
Hora de levantarse
1.2 nS 1.8 nS
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
10.1 A 12.4 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
20 mOhms 11.2 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
11.9 nS 17.4 nS
Tiempo de retardo de encendido típico
5.2 nS 6.6 nS
Qg-Gate-Charge
7.2 nC 15.6 nC
Transconductancia directa-Mín.
22 S 53 S
Tags
FDMS7620, FDMS762, FDMS76, FDMS7, FDMS, FDM
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
FDMS7620S Series 30 V 20 mOhm Dual N.Ch. SMT PowerTrench Mosfet - Power56
***ical
Trans MOSFET N-CH Si 30V 10.1A/12.4A 8-Pin Power 56 T/R
***Semiconductor
Dual N-Channel PowerTrench® MOSFET 30V
***p One Stop Japan
Trans MOSFET N-CH 30V 10.1A/12.4A 8-Pin Power 56 T/R
***Components
MOSFET Dual N-Ch 30V 10.1A/12.4A Power56
***i-Key
MOSFET N-CH 30V DUAL POWER56
*** Source Electronics
MOSFET 2N-CH 30V POWER56
***ark
DUAL N CH MOSFET, 30V, 22A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:10.1A; Continuous Drain Current Id, P Channel:12.4A; Drain Source Voltage Vds, N Channel:30V
***rchild Semiconductor
This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal synchronous buck power stage in terms of efficiency and PCB utilization. The low switching loss “High Side” MOSFET is complementory by a low conduction loss “Low Side” SyncFET.
***ment14 APAC
MOSFET, NN CH, 30V, 13A/22A, POWER56; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:13A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0152ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.2V; Power Dissipation Pd:2.2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
Fairchild PowerTrench MOSFETs
PowerTrench® MOSFETs
ON Semiconductor PowerTrench® MOSFETs offer a broad portfolio of MOSFETs in the industry. These MOSFETs offer both N-Channel and P-Channel versions that are optimized for low RDS(ON) switching performance and ruggedness. Typical applications include load switches, primary switching, mobile computing, DC-DC converters, and synchronous rectifiers.  
FDMS36xxS Power Stage Dual Asymmetric MOSFETs
ON Semiconductor FDMS36xxS Power Stage Dual Asymmetric MOSFET modules provide the highest output current capability among all 5mm x 6mm dual MOSFET solutions on the market. The FDMS36xxS dual asymmetric MOSFETs incorporate a control and synchronous MOSFET as well as a monolithic Schottky body diode in a PQFN package. The switch node has been internally connected to allow enable easy placement and routing of synchronous buck converters. The control MOSFET and synchronous MOSFET have been designed to provide optimal power efficiency for output currents up to 30A. These ON Semiconductor devices achieve industry-leading sub-2mΩ low side rDS(on) at high performance computing rated breakdown voltages. FDMS36xxS MOSFETs are optimized to minimize the combination of conduction and switching losses from 300kHz to 600kHz, delivering reliable, highest power efficiency for point-of-load and multi-phase synchronous buck DC-DC applications.Learn More
Parte # Mfg. Descripción Valores Precio
FDMS7620S
DISTI # FDMS7620SCT-ND
ON SemiconductorMOSFET 2N-CH 30V POWER56
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Limited Supply - Call
    FDMS7620S
    DISTI # FDMS7620SDKR-ND
    ON SemiconductorMOSFET 2N-CH 30V POWER56
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®
    Limited Supply - Call
      FDMS7620S
      DISTI # FDMS7620STR-ND
      ON SemiconductorMOSFET 2N-CH 30V POWER56
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape & Reel (TR)
      Temporarily Out of Stock
      • 3000:$0.5698
      FDMS7620S
      DISTI # FDMS7620S
      ON SemiconductorTrans MOSFET N-CH 30V 10.1A/12.4A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS7620S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Reel
      Americas - 0
      • 3000:$0.4829
      • 6000:$0.4799
      • 12000:$0.4739
      • 18000:$0.4679
      • 30000:$0.4559
      FDMS7620S
      DISTI # FDMS7620S
      ON SemiconductorTrans MOSFET N-CH 30V 10.1A/12.4A 8-Pin Power 56 T/R (Alt: FDMS7620S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel
      Europe - 0
      • 3000:€0.7139
      • 6000:€0.5839
      • 12000:€0.5359
      • 18000:€0.4939
      • 30000:€0.4589
      FDMS7620S
      DISTI # FDMS7620S
      ON SemiconductorTrans MOSFET N-CH 30V 10.1A/12.4A 8-Pin Power 56 T/R (Alt: FDMS7620S)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel
      Asia - 0
      • 3000:$0.4536
      • 6000:$0.4361
      • 9000:$0.4200
      • 15000:$0.4050
      • 30000:$0.3910
      • 75000:$0.3780
      • 150000:$0.3718
      FDMS7620S-T
      DISTI # FDMS7620S-T
      ON SemiconductorTrans MOSFET N-CH 30V10.1A@Q1/12.4A@Q2 8-Pin Power 56 T/R (Alt: FDMS7620S-T)
      RoHS: Compliant
      Min Qty: 3000
      Container: Tape and Reel
      Asia - 0
        FDMS7620S_F106
        DISTI # FDMS7620S-F106
        ON SemiconductorTrans MOSFET N-CH 30V 10.1A/12.4A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS7620S-F106)
        RoHS: Compliant
        Min Qty: 3000
        Container: Reel
        Americas - 0
        • 3000:$0.2349
        • 6000:$0.2329
        • 12000:$0.2299
        • 18000:$0.2269
        • 30000:$0.2219
        FDMS7620S
        DISTI # 54T8342
        ON SemiconductorDUAL N CH MOSFET, 30V, 22A, POWER56, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:22A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0152ohm,Rds(on) Test Voltage Vgs:10V,Power Dissipation Pd:1WRoHS Compliant: Yes0
        • 1:$0.4930
        • 9000:$0.4740
        • 24000:$0.4590
        FDMS7620S-F106
        DISTI # 48AC0989
        ON Semiconductor30/20V DUAL N-CH. ER TR / REEL0
        • 1:$0.8100
        • 250:$0.6110
        • 500:$0.5450
        • 1000:$0.4910
        • 5000:$0.4450
        FDMS7620SFairchild Semiconductor CorporationSmall Signal Field-Effect Transistor, 0.0101A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
        RoHS: Compliant
        139349
        • 1000:$0.5400
        • 500:$0.5700
        • 100:$0.5900
        • 25:$0.6200
        • 1:$0.6600
        FDMS7620S
        DISTI # 512-FDMS7620S
        ON SemiconductorMOSFET 30V Dual N-Channel PowerTrench MOSFET
        RoHS: Compliant
        2630
        • 1:$1.2200
        • 10:$1.0400
        • 100:$0.7960
        • 500:$0.7040
        • 1000:$0.5550
        • 3000:$0.4930
        • 9000:$0.4740
        FDMS7620S-F106
        DISTI # 512-FDMS7620S_F106
        ON SemiconductorMOSFET 30V Dual N-Channel PowerTrench
        RoHS: Compliant
        0
        • 3000:$0.2800
        FDMS7620S_F065
        DISTI # 512-FDMS7620S_F065
        ON SemiconductorMOSFET 30V Dual N-Channel PowerTrench
        RoHS: Compliant
        0
        • 3000:$0.3990
        • 9000:$0.3850
        FDMS7620SFairchild Semiconductor Corporation10.1 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET20
        • 16:$0.6600
        • 5:$0.9900
        • 1:$1.3200
        FDMS7620SFairchild Semiconductor Corporation 4811
          FDMS7620SON SemiconductorDUAL N-CHANNEL POWERTRENCH MOSFET ROHS COMPLIANT, POWER 56, 8 PIN
          RoHS: Compliant
          Europe - 3000
            FDMS7620S
            DISTI # C1S541901537940
            ON SemiconductorTrans MOSFET N-CH Si 30V 10.1A/12.4A 8-Pin DFN EP T/R
            RoHS: Compliant
            3000
            • 3000:$0.6450
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            OMO.#: OMO-FDMS7660-CUT-TAPE-1190

            Nuevo y original
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            OMO.#: OMO-FDMS86369-F085-ON-SEMICONDUCTOR

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            Disponibilidad
            Valores:
            Available
            En orden:
            2000
            Ingrese la cantidad:
            El precio actual de FDMS7620S es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
            Precio de referencia (USD)
            Cantidad
            Precio unitario
            Ext. Precio
            1
            0,68 US$
            0,68 US$
            10
            0,65 US$
            6,50 US$
            100
            0,62 US$
            61,55 US$
            500
            0,58 US$
            290,65 US$
            1000
            0,55 US$
            547,10 US$
            Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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