IPL65R190E6AUMA1

IPL65R190E6AUMA1
Mfr. #:
IPL65R190E6AUMA1
Fabricante:
Infineon Technologies
Descripción:
RF Bipolar Transistors MOSFET N-Ch 650V 20.2A VSON-4
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPL65R190E6AUMA1 Ficha de datos
Entrega:
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ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Infineon Technologies
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Alias ​​de parte
IPL65R190E6 SP001074938
Estilo de montaje
SMD / SMT
Paquete-Estuche
VSON-4
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
151 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 40 C
Otoño
10 ns
Hora de levantarse
11 ns
Vgs-Puerta-Fuente-Voltaje
+/- 20 V
Id-corriente-de-drenaje-continua
20.2 A
Vds-Drain-Source-Breakdown-Voltage
650 V
Vgs-th-Gate-Source-Threshold-Voltage
3 V
Resistencia a la fuente de desagüe de Rds
190 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
112 ns
Tiempo de retardo de encendido típico
12 ns
Qg-Gate-Charge
73 nC
Modo de canal
Mejora
Tags
IPL65R19, IPL65R1, IPL65R, IPL65, IPL6, IPL
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
IPL65R190E6AUMA1
DISTI # IPL65R190E6AUMA1-ND
Infineon Technologies AGMOSFET N-CH 4VSON
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Limited Supply - Call
    IPL65R190E6AUMA1
    DISTI # 726-IPL65R190E6AUMA1
    Infineon Technologies AGMOSFET N-Ch 650V 20.2A VSON-4
    RoHS: Compliant
    0
      IPL65R190E6AUMA1
      DISTI # 8977551P
      Infineon Technologies AGMOSFET N-CH 650V 12.8A COOLMOSE6 VSON4, RL2995
      • 25:£1.6400
      • 100:£1.4340
      • 250:£1.3420
      • 500:£1.2800
      Imagen Parte # Descripción
      IPL65R195C7AUMA1

      Mfr.#: IPL65R195C7AUMA1

      OMO.#: OMO-IPL65R195C7AUMA1

      MOSFET HIGH POWER BEST IN CLASS
      IPL65R190E6AUMA1

      Mfr.#: IPL65R190E6AUMA1

      OMO.#: OMO-IPL65R190E6AUMA1

      MOSFET N-Ch 650V 20.2A VSON-4
      IPL65R190E6

      Mfr.#: IPL65R190E6

      OMO.#: OMO-IPL65R190E6-1190

      Infineon HIGH POWER_LEGACY
      IPL65R195C7

      Mfr.#: IPL65R195C7

      OMO.#: OMO-IPL65R195C7-1190

      MOSFET HIGH POWER BEST IN CLASS
      IPL65R195C7AUMA1

      Mfr.#: IPL65R195C7AUMA1

      OMO.#: OMO-IPL65R195C7AUMA1-INFINEON-TECHNOLOGIES

      MOSFET HIGH POWER BEST IN CLASS
      IPL65R190E6AUMA1

      Mfr.#: IPL65R190E6AUMA1

      OMO.#: OMO-IPL65R190E6AUMA1-INFINEON-TECHNOLOGIES

      RF Bipolar Transistors MOSFET N-Ch 650V 20.2A VSON-4
      Disponibilidad
      Valores:
      Available
      En orden:
      1000
      Ingrese la cantidad:
      El precio actual de IPL65R190E6AUMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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      100
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      1000
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