IXTA8N65X2

IXTA8N65X2
Mfr. #:
IXTA8N65X2
Fabricante:
Littelfuse
Descripción:
MOSFET DISCMSFT NCHULTRAJNCTN X2CLASS
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTA8N65X2 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IXTA8N65X2 más información
Atributo del producto
Valor de atributo
Fabricante:
IXYS
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TO-263-3
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
650 V
Id - Corriente de drenaje continua:
8 A
Rds On - Resistencia de la fuente de drenaje:
500 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
12 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
150 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
HiPerFET
Embalaje:
Tubo
Serie:
X2-Class
Marca:
IXYS
Transconductancia directa - Mín .:
4.8 S
Otoño:
24 ns
Tipo de producto:
MOSFET
Hora de levantarse:
28 ns
Cantidad de paquete de fábrica:
50
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
53 ns
Tiempo típico de retardo de encendido:
24 ns
Unidad de peso:
0.068654 oz
Tags
IXTA8, IXTA, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ment14 APAC
MOSFET, N-CH, 650V, 8A, TO-263
***ark
Mosfet, N-Ch, 650V, 8A, To-263; Transistor Polarity:n Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.5Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Rohs Compliant: Yes
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
X2-Class 650V-700V Power MOSFETs with HiPerFET™
IXYS X2-Class 650V-700V Power MOSFETs with HiPerFET™ are designed for high-efficiency and high-speed power switching applications. The Ultra-Junction X2-Class MOSFETs offer low gate charge and excellent ruggedness with a fast intrinsic diode. These MOSFETs are available in many standard industrial packages including isolated types. Typical applications are switch-mode and resonant-mode power supplies, DC-DC converters, PFC circuits, AC and DC motor drives and robotics and servo controls.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
Parte # Mfg. Descripción Valores Precio
IXTA8N65X2
DISTI # IXTA8N65X2-ND
IXYS CorporationMOSFET N-CH 650V 8A X2 TO-263
RoHS: Compliant
Min Qty: 1
Container: Tube
39In Stock
  • 2500:$1.1200
  • 500:$1.4000
  • 100:$1.8000
  • 50:$2.0000
  • 10:$2.2400
  • 1:$2.4800
IXTA8N65X2
DISTI # 747-IXTA8N65X2
IXYS CorporationMOSFET
RoHS: Compliant
40
  • 1:$2.8500
  • 10:$2.5800
  • 25:$2.2400
  • 50:$2.1000
  • 100:$2.0700
  • 250:$1.6800
  • 500:$1.6100
  • 1000:$1.3400
  • 2500:$1.1200
IXTA8N65X2IXYS Corporation 200
    IXTA8N65X2
    DISTI # IXTA8N65X2
    IXYS CorporationTransistor: N-MOSFET,X2-Class,unipolar,650V,8A,150W,TO26397
    • 50:$1.2000
    • 10:$1.3300
    • 3:$1.5000
    • 1:$1.6700
    IXTA8N65X2
    DISTI # 2674778
    IXYS CorporationMOSFET, N-CH, 650V, 8A, TO-263
    RoHS: Compliant
    16
    • 500:$2.1500
    • 100:$2.7600
    • 50:$3.0600
    • 1:$3.7900
    IXTA8N65X2
    DISTI # 2674778
    IXYS CorporationMOSFET, N-CH, 650V, 8A, TO-263
    RoHS: Compliant
    16
    • 500:£1.0800
    • 250:£1.2900
    • 100:£1.3900
    • 10:£1.5500
    • 1:£2.1700
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    Disponibilidad
    Valores:
    40
    En orden:
    2023
    Ingrese la cantidad:
    El precio actual de IXTA8N65X2 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    2,85 US$
    2,85 US$
    10
    2,58 US$
    25,80 US$
    25
    2,24 US$
    56,00 US$
    50
    2,10 US$
    105,00 US$
    100
    2,07 US$
    207,00 US$
    250
    1,68 US$
    420,00 US$
    500
    1,61 US$
    805,00 US$
    1000
    1,34 US$
    1 340,00 US$
    2500
    1,12 US$
    2 800,00 US$
    Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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