MRF8P29300HSR6

MRF8P29300HSR6
Mfr. #:
MRF8P29300HSR6
Fabricante:
NXP Semiconductors
Descripción:
FET RF 2CH 65V 2.9GHZ NI1230S
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MRF8P29300HSR6 Ficha de datos
Entrega:
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ECAD Model:
Más información:
MRF8P29300HSR6 más información MRF8P29300HSR6 Product Details
Atributo del producto
Valor de atributo
Fabricante
NXP / Freescale
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
MRF8P29300H
embalaje
Carrete
Unidad de peso
0.300472 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
NI-1230S
Tecnología
Si
Ganar
13.3 dB at 2.9 GHz
Potencia de salida
320 W at Peak
Temperatura máxima de funcionamiento
+ 150 C
Frecuencia de operación
2.7 GHz to 2.9 GHz
Vgs-Puerta-Fuente-Voltaje
10 V
Vds-Drain-Source-Breakdown-Voltage
65 V
Vgs-th-Gate-Source-Threshold-Voltage
1.9 V
Polaridad del transistor
Canal N
Tags
MRF8P29, MRF8P2, MRF8P, MRF8, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V
***W
RF Power Transistor,2700 to 2900 MHz, 320 W, Typ Gain in dB is 13.3 @ 2900 MHz, 30 V, LDMOS, SOT1829
***et
Trans MOSFET N-CH -0.5V/65V 4-Pin NI-1230S T/R
***hardson RFPD
RF POWER TRANSISTOR LDMOS
***i-Key
FET RF 2CH 65V 2.9GHZ NI1230S
***ark
HV8 300W 50V NI1230S
Parte # Mfg. Descripción Valores Precio
MRF8P29300HSR6
DISTI # MRF8P29300HSR6-ND
NXP SemiconductorsFET RF 2CH 65V 2.9GHZ NI1230S
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 150:$361.3711
MRF8P29300HSR6
DISTI # MRF8P29300HSR6
NXP SemiconductorsTrans MOSFET N-CH -0.5V/65V 4-Pin NI-1230S T/R - Tape and Reel (Alt: MRF8P29300HSR6)
RoHS: Compliant
Min Qty: 150
Container: Reel
Americas - 0
  • 150:$395.9900
  • 300:$380.4900
  • 600:$365.5900
  • 900:$352.3900
  • 1500:$345.5900
MRF8P29300HSR6
DISTI # 841-MRF8P29300HSR6
NXP SemiconductorsRF MOSFET Transistors HV8 300W 50V NI1230S
RoHS: Compliant
0
  • 150:$347.8100
MRF8P29300HSR6
DISTI # MRF8P29300HSR6
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
0
  • 150:$380.3900
Imagen Parte # Descripción
MRF8P29300HR6

Mfr.#: MRF8P29300HR6

OMO.#: OMO-MRF8P29300HR6

RF MOSFET Transistors HV8 300W 50V NI1230
MRF8P29300HSR6

Mfr.#: MRF8P29300HSR6

OMO.#: OMO-MRF8P29300HSR6

RF MOSFET Transistors HV8 300W 50V NI1230S
MRF8P29300HR5

Mfr.#: MRF8P29300HR5

OMO.#: OMO-MRF8P29300HR5

RF MOSFET Transistors HV8 300W 50V NI1230
MRF8P29300HR5

Mfr.#: MRF8P29300HR5

OMO.#: OMO-MRF8P29300HR5-NXP-SEMICONDUCTORS

FET RF 2CH 65V 2.9GHZ NI1230
MRF8P29300HR6

Mfr.#: MRF8P29300HR6

OMO.#: OMO-MRF8P29300HR6-NXP-SEMICONDUCTORS

RF MOSFET Transistors HV8 300W 50V NI1230
MRF8P29300HSR6

Mfr.#: MRF8P29300HSR6

OMO.#: OMO-MRF8P29300HSR6-NXP-SEMICONDUCTORS

FET RF 2CH 65V 2.9GHZ NI1230S
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de MRF8P29300HSR6 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
518,38 US$
518,38 US$
10
492,47 US$
4 924,66 US$
100
466,55 US$
46 654,65 US$
500
440,63 US$
220 313,65 US$
1000
414,71 US$
414 708,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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