MRF8P29300HSR6

MRF8P29300HSR6
Mfr. #:
MRF8P29300HSR6
Fabricante:
NXP / Freescale
Descripción:
RF MOSFET Transistors HV8 300W 50V NI1230S
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
MRF8P29300HSR6 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
NXP
Categoria de producto:
Transistores RF MOSFET
RoHS:
Y
Polaridad del transistor:
Canal N
Tecnología:
Si
Vds - Voltaje de ruptura de drenaje-fuente:
65 V
Ganar:
13.3 dB
Potencia de salida:
320 W
Temperatura máxima de funcionamiento:
+ 150 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
NI-1230S
Embalaje:
Carrete
Configuración:
Doble
Frecuencia de operación:
2.7 GHz to 2.9 GHz
Serie:
MRF8P29300H
Marca:
NXP / Freescale
Tipo de producto:
Transistores RF MOSFET
Cantidad de paquete de fábrica:
150
Subcategoría:
MOSFET
Vgs - Voltaje puerta-fuente:
10 V
Vgs th - Voltaje umbral puerta-fuente:
1.9 V
Parte # Alias:
935310588128
Unidad de peso:
0.300472 oz
Tags
MRF8P29, MRF8P2, MRF8P, MRF8, MRF
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We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***escale Semiconductor
Lateral N-Channel Broadband RF Power MOSFET, 2700-2900 MHz, 320 W, 30 V
***W
RF Power Transistor,2700 to 2900 MHz, 320 W, Typ Gain in dB is 13.3 @ 2900 MHz, 30 V, LDMOS, SOT1829
***et
Trans MOSFET N-CH -0.5V/65V 4-Pin NI-1230S T/R
***hardson RFPD
RF POWER TRANSISTOR LDMOS
***i-Key
FET RF 2CH 65V 2.9GHZ NI1230S
***ark
HV8 300W 50V NI1230S
Parte # Mfg. Descripción Valores Precio
MRF8P29300HSR6
DISTI # MRF8P29300HSR6-ND
NXP SemiconductorsFET RF 2CH 65V 2.9GHZ NI1230S
RoHS: Compliant
Min Qty: 150
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 150:$361.3711
MRF8P29300HSR6
DISTI # MRF8P29300HSR6
NXP SemiconductorsTrans MOSFET N-CH -0.5V/65V 4-Pin NI-1230S T/R - Tape and Reel (Alt: MRF8P29300HSR6)
RoHS: Compliant
Min Qty: 150
Container: Reel
Americas - 0
  • 150:$395.9900
  • 300:$380.4900
  • 600:$365.5900
  • 900:$352.3900
  • 1500:$345.5900
MRF8P29300HSR6
DISTI # 841-MRF8P29300HSR6
NXP SemiconductorsRF MOSFET Transistors HV8 300W 50V NI1230S
RoHS: Compliant
0
  • 150:$347.8100
MRF8P29300HSR6
DISTI # MRF8P29300HSR6
NXP SemiconductorsRF POWER TRANSISTOR
RoHS: Compliant
0
  • 150:$380.3900
Imagen Parte # Descripción
MRF8P29300HR6

Mfr.#: MRF8P29300HR6

OMO.#: OMO-MRF8P29300HR6

RF MOSFET Transistors HV8 300W 50V NI1230
MRF8P29300HSR6

Mfr.#: MRF8P29300HSR6

OMO.#: OMO-MRF8P29300HSR6

RF MOSFET Transistors HV8 300W 50V NI1230S
MRF8P29300HR5

Mfr.#: MRF8P29300HR5

OMO.#: OMO-MRF8P29300HR5

RF MOSFET Transistors HV8 300W 50V NI1230
MRF8P29300HR5

Mfr.#: MRF8P29300HR5

OMO.#: OMO-MRF8P29300HR5-NXP-SEMICONDUCTORS

FET RF 2CH 65V 2.9GHZ NI1230
MRF8P29300HR6

Mfr.#: MRF8P29300HR6

OMO.#: OMO-MRF8P29300HR6-NXP-SEMICONDUCTORS

RF MOSFET Transistors HV8 300W 50V NI1230
MRF8P29300HSR6

Mfr.#: MRF8P29300HSR6

OMO.#: OMO-MRF8P29300HSR6-NXP-SEMICONDUCTORS

FET RF 2CH 65V 2.9GHZ NI1230S
Disponibilidad
Valores:
Available
En orden:
2500
Ingrese la cantidad:
El precio actual de MRF8P29300HSR6 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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