STU8N65M5

STU8N65M5
Mfr. #:
STU8N65M5
Fabricante:
STMicroelectronics
Descripción:
MOSFET N-CH 650V 7A IPAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STU8N65M5 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
STU8N65M5 más información STU8N65M5 Product Details
Atributo del producto
Valor de atributo
Tags
STU8N, STU8, STU
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 650V 7A 3-Pin(3+Tab) IPAK Tube
***an P&S
650V,7A,N-channel Power MOSFET
***Components
MOSFET N-Channel 650V 7A IPAK
***i-Key
MOSFET N-CH 650V 7A IPAK
***ark
MOSFET, N CH, 650V, 7A, TO-251; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.56ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; No. of Pins:3 ;RoHS Compliant: Yes
***ment14 APAC
MOSFET, N CH, 650V, 7A, IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.56ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:70W; Transistor Case Style:TO-251; No. of Pins:3; SVHC:No SVHC (19-Dec-2012)
***nell
MOSFET, CANALE N, 650V, 7A, IPAK; Polarità Transistor:Canale N; Corrente Continua di Drain Id:7A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.56ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:70W; Modello Case Transistor:TO-251; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (17-Dec-2015)
Parte # Mfg. Descripción Valores Precio
STU8N65M5
DISTI # 497-11365-5-ND
STMicroelectronicsMOSFET N-CH 650V 7A IPAK
RoHS: Compliant
Min Qty: 3000
Container: Tube
Limited Supply - Call
    STU8N65M5
    DISTI # 511-STU8N65M5
    STMicroelectronicsMOSFET N-Ch 650V 0.56 Ohm 7A Mdmesh V
    RoHS: Compliant
    0
      STU8N65M5STMicroelectronics650V,7A,0.56,N-channel Power MOSFET200
      • 1:$0.6900
      • 100:$0.6900
      • 500:$0.6900
      • 1000:$0.6900
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      Disponibilidad
      Valores:
      Available
      En orden:
      2000
      Ingrese la cantidad:
      El precio actual de STU8N65M5 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      1,04 US$
      1,04 US$
      10
      0,98 US$
      9,83 US$
      100
      0,93 US$
      93,15 US$
      500
      0,88 US$
      439,90 US$
      1000
      0,83 US$
      828,00 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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