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STU80N4F6

STU80N4F6
Mfr. #:
STU80N4F6
Fabricante:
STMicroelectronics
Descripción:
MOSFET N CH 40V 80A IPAK
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
STU80N4F6 Ficha de datos
Entrega:
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Más información:
STU80N4F6 más información STU80N4F6 Product Details
Atributo del producto
Valor de atributo
Fabricante
STMicroelectronics
categoria de producto
Transistores - FET, MOSFET - Sencillo
Serie
STripFET de canal N
embalaje
Tubo
Unidad de peso
0.139332 oz
Estilo de montaje
A través del orificio
Nombre comercial
STripFET
Paquete-Estuche
IPAK-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
70 W
Temperatura máxima de funcionamiento
+ 175 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
11.9 ns
Hora de levantarse
7.6 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
80 A
Vds-Drain-Source-Breakdown-Voltage
40 V
Vgs-th-Gate-Source-Threshold-Voltage
4 V
Resistencia a la fuente de desagüe de Rds
5.5 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
46.1 ns
Tiempo de retardo de encendido típico
10.5 ns
Qg-Gate-Charge
36 nC
Modo de canal
Mejora
Tags
STU8, STU
Service Guarantees

We guarantee 100% customer satisfaction.

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We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***icroelectronics
N-channel 40 V, 5.8 mOhm typ., 80 A, STripFET(TM) VI DeepGATE(TM) Power MOSFET in DPAK package
***r Electronics
Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ical
Trans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) IPAK Tube
***ernational Rectifier
30V Single N-Channel HEXFET Power MOSFET in a I-Pak package
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***ment14 APAC
MOSFET, N-CH 30V 86A IPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):5.8mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:75W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:I-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:86A; Package / Case:IPAK; Power Dissipation Pd:75W; Power Dissipation Pd:75W; Termination Type:Through Hole; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
***Yang
30V,35A,5.7MO,NCH, IPAK, POWER TRENCH MOSFET - Bulk
***ser
MOSFETs 30V N-Channel PowerTrench
***r Electronics
Power Field-Effect Transistor, 17A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA
***i-Key
MOSFET N-CH 30V 90A IPAK
***ser
MOSFETs 30V N-Channel PowerTrench SyncFET
***el Nordic
Contact for details
***ineon SCT
Automotive Q101 40V Single N-Channel HEXFET Power MOSFET in a I-Pak Package, IPAK-3, RoHS
***ical
Trans MOSFET N-CH Si 40V 100A Automotive 3-Pin(3+Tab) IPAK Tube
***el Electronic
Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 8.2pF 50Volts C0G +/-0.50pF
***ineon
Benefits: Advanced process technology; Ultra-low on-resistance; 175C operating temperature; Fast switching; Repetitive avalanche allowed up to Tjmax; Lead free, RoHS compliant; Automotive qualified
***nell
MOSFET, 40V, 100A, Q101, I-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Min:-55°C; Operating Temperature Max:175°C; Transistor Case Style:TO-251AA; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
***icroelectronics
N-channel 30 V, 0.0042 Ohm, 75 A, IPAK STripFET(TM) VI DeepGATE(TM) Power MOSFET
***r Electronics
Power Field-Effect Transistor, 75A I(D), 30V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
***ark
MOSFET, N CH, 30V, 75A, TO-251; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:75A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:1.7V; MSL:- RoHS Compliant: Yes
***nell
MOSFET, N CH, 30V, 75A, IPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 75A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0046ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Power Dissipation Pd: 60W; Transistor Case Style: TO-251; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C
***ser
MOSFETs- Power and Small Signal NFET 30V 76A 6MOHM
***r Electronics
Power Field-Effect Transistor, 11A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
***Yang
NFET DPAK 30V 76A 6MOHM - Rail/Tube
***or
MOSFET N-CH 30V 11.3A/79A IPAK
***th Star Micro
Not recommended for new design. Use NTD4906N
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:76A; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):6mohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:2.5V; Power Dissipation, Pd:60W ;RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
STU80N4F6
DISTI # 30615503		STMicroelectronicsTrans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		50
  • 33:$0.7625
STU80N4F6
DISTI # 497-13657-5-ND		STMicroelectronicsMOSFET N CH 40V 80A IPAK
RoHS: Compliant
Min Qty: 1
Container: Tube		2377In Stock
  • 525:$1.0841
  • 150:$1.3195
  • 75:$1.5488
  • 10:$1.6420
  • 1:$1.8300
STU80N4F6
DISTI # C1S730200785376		STMicroelectronicsTrans MOSFET N-CH 40V 80A Automotive 3-Pin(3+Tab) IPAK Tube
RoHS: Compliant		50
  • 50:$0.6030
  • 1:$0.6100
STU80N4F6
DISTI # 89W1526		STMicroelectronicsPTD LOW VOLTAGE0
  • 5000:$0.7670
  • 2500:$0.7910
  • 1000:$0.9800
  • 500:$1.1000
  • 100:$1.1800
  • 10:$1.4700
  • 1:$1.7300
STU80N4F6
DISTI # 511-STU80N4F6		STMicroelectronicsMOSFET N-Ch 40 V 5.8 mOhm 80 A STripFET(TM)
RoHS: Compliant		2887
  • 1:$1.7400
  • 10:$1.4800
  • 100:$1.1800
  • 500:$1.0400
  • 1000:$0.8560
  • 3000:$0.7970
  • 6000:$0.7680
  • 9000:$0.7380
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Valores:
Available
En orden:
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