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GS8161Z18DD-200

GS8161Z18DD-200
Mfr. #:
GS8161Z18DD-200
Fabricante:
GSI Technology
Descripción:
SRAM 2.5 or 3.3V 1M x 18 18M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS8161Z18DD-200 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS8161Z18DD-200 más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
RoHS:
N
Tamaño de la memoria:
18 Mbit
Organización:
1 M x 18
Tiempo de acceso:
6.5 ns
Frecuencia máxima de reloj:
200 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
3.6 V
Voltaje de suministro - Min:
2.3 V
Corriente de suministro - Máx .:
195 mA, 195 mA
Temperatura mínima de funcionamiento:
0 C
Temperatura máxima de funcionamiento:
+ 70 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
BGA-165
Embalaje:
Bandeja
Tipo de memoria:
SDR
Serie:
GS8161Z18DD
Escribe:
NBT
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
36
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
NBT SRAM
Tags
GS8161Z18DD-20, GS8161Z18DD-2, GS8161Z18DD, GS8161Z18D, GS8161Z1, GS8161Z, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 6.5ns/3ns 165-Pin FBGA
NBT SRAMs
GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. 
Imagen Parte # Descripción
GS8161Z18DGT-150

Mfr.#: GS8161Z18DGT-150

OMO.#: OMO-GS8161Z18DGT-150

 SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGD-200IV

Mfr.#: GS8161Z18DGD-200IV

OMO.#: OMO-GS8161Z18DGD-200IV

 SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DGT-200I

Mfr.#: GS8161Z18DGT-200I

OMO.#: OMO-GS8161Z18DGT-200I

 SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z36DGD-200V

Mfr.#: GS8161Z36DGD-200V

OMO.#: OMO-GS8161Z36DGD-200V

 SRAM 1.8/2.5V 512K x 36 18M
GS8161Z36DD-250IV

Mfr.#: GS8161Z36DD-250IV

OMO.#: OMO-GS8161Z36DD-250IV

 SRAM 1.8/2.5V 512K x 36 18M
GS8161Z36DGT-150V

Mfr.#: GS8161Z36DGT-150V

OMO.#: OMO-GS8161Z36DGT-150V

 SRAM 1.8/2.5V 512K x 36 18M
GS8161Z18DGD-150IV

Mfr.#: GS8161Z18DGD-150IV

OMO.#: OMO-GS8161Z18DGD-150IV

 SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DGT-250IV

Mfr.#: GS8161Z18DGT-250IV

OMO.#: OMO-GS8161Z18DGT-250IV

 SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DGT-333IV

Mfr.#: GS8161Z18DGT-333IV

OMO.#: OMO-GS8161Z18DGT-333IV

 SRAM 1.8/2.5V 1M x 18 18M
GS8161Z32DD-200I

Mfr.#: GS8161Z32DD-200I

OMO.#: OMO-GS8161Z32DD-200I

 SRAM 2.5 or 3.3V 512K x 32 16M
Disponibilidad
Valores:
Available
En orden:
5500
Ingrese la cantidad:
El precio actual de GS8161Z18DD-200 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
14,23 US$
14,23 US$
25
13,21 US$
330,25 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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