GS8161Z18DGT-200I

GS8161Z18DGT-200I
Mfr. #:
GS8161Z18DGT-200I
Fabricante:
GSI Technology
Descripción:
SRAM 2.5 or 3.3V 1M x 18 18M
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
GS8161Z18DGT-200I Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
GS8161Z18DGT-200I más información
Atributo del producto
Valor de atributo
Fabricante:
Tecnología GSI
Categoria de producto:
SRAM
RoHS:
Y
Tamaño de la memoria:
18 Mbit
Organización:
1 M x 18
Tiempo de acceso:
6.5 ns
Frecuencia máxima de reloj:
200 MHz
Tipo de interfaz:
Parallel
Voltaje de suministro - Máx:
3.6 V
Voltaje de suministro - Min:
2.3 V
Corriente de suministro - Máx .:
215 mA, 215 mA
Temperatura mínima de funcionamiento:
- 40 C
Temperatura máxima de funcionamiento:
+ 85 C
Estilo de montaje:
SMD / SMT
Paquete / Caja:
TQFP-100
Embalaje:
Bandeja
Tipo de memoria:
SDR
Serie:
GS8161Z18DGT
Escribe:
NBT
Marca:
Tecnología GSI
Sensible a la humedad:
Yes
Tipo de producto:
SRAM
Cantidad de paquete de fábrica:
36
Subcategoría:
Memoria y almacenamiento de datos
Nombre comercial:
NBT SRAM
Tags
GS8161Z18DGT-20, GS8161Z18DGT-2, GS8161Z18DGT, GS8161Z18DG, GS8161Z18D, GS8161Z1, GS8161Z, GS8161, GS816, GS81, GS8
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
SRAM Chip Sync Dual 2.5V/3.3V 18M-Bit 1M x 18 6.5ns/3ns 100-Pin TQFP
***ure Electronics
AS8C161831 Series 18 Mb (1 M x 18) 2.5 V 3.2 ns Synchronous RAM - TQFP100
***et
SRAM Chip Sync Dual 2.5V 18M-Bit 1M x 18 3.5ns 100-Pin TQFP
***se
18Mb SYNC SRAM 1M x 18 ZBT(Pipelined) 2.5V 166MHz 100TQFP
***i-Key
IC SRAM 18MBIT PARALLEL 100TQFP
***egrated Device Technology
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM
***enic
TQFP-100(14x14) SRAM ROHS
***i-Key
IC SRAM 18MBIT PARALLEL 100TQFP
*** Electronic Components
SRAM 2.5V CORE ZBT X18 18M
***et
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 5ns 100-Pin TQFP Tube/Tray
***i-Key Marketplace
IC SRAM 18MBIT PAR 100TQFP
***i-Key
1M X 18, SYNCHRONOUS ZBT SRAM
***et
SRAM Chip Sync Dual 3.3V 18M-Bit 1M x 18 7.5ns 100-Pin TQFP
***-Wing Technology
e3 Surface Mount Tray 1MX18 ic memory 117MHz 7.5ns 1.6mm 250mA
***DA Technology Co., Ltd.
Product Description Demo for Development.
***or
IC SRAM 18MBIT PARALLEL 100TQFP
***ark
18Mb,flow-Through,sync,1Mb X 18,7.5Ns,3.3V Or 2.5V I/O,100 Pin Tqfp, Rohs |Integrated Silicon Solution (Issi) IS61LF102418A-7.5TQLI
***ical
SRAM Chip Sync Single 2.5V 18M-Bit 1M x 18 3.5ns 100-Pin TQFP Tray
***ure Electronics
Synchronous SRAM ZBT 18 Mb( 1M x 18), 166 Mhz TQFP-100
***egrated Device Technology
2.5V 1M X 18 ZBT Synchronous 2.5V I/O PipeLine SRAM
***i-Key Marketplace
IC SRAM 18MBIT PARALLEL 100TQFP
***pmh
STANDARD SRAM, 1MX36, 6.5NS PDSO
***et
SRAM Chip Sync Dual 3.3V 18M-Bit 1M x 18 3.1ns 100-Pin TQFP
***or
IC SRAM 18MBIT PARALLEL 100TQFP
***ark
18Mb,"no-Wait"/Pipeline,sync,1Mb X 18,200Mhz,3.3V/2.5V - I/O,100 Pin Tqfp, Rohs |Integrated Silicon Solution (Issi) IS61NLP102418-200TQLI
NBT SRAMs
GSI Technology NBT SRAMs are 144Mbit and 288Mbit Synchronous Static SRAMs that allow utilization of all available bus bandwidth. The SRAMs achieve this by eliminating the need to insert deselect cycles when the device is switched from read to write cycles. The devices' simplified interface is designed to use a data bus's maximum bandwidth. Because it is a synchronous device, address, data inputs, and read/write control inputs are captured on the rising edge of the input clock. 
Imagen Parte # Descripción
GS8161Z18DGT-150

Mfr.#: GS8161Z18DGT-150

OMO.#: OMO-GS8161Z18DGT-150

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGD-150V

Mfr.#: GS8161Z18DGD-150V

OMO.#: OMO-GS8161Z18DGD-150V

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DGT-200I

Mfr.#: GS8161Z18DGT-200I

OMO.#: OMO-GS8161Z18DGT-200I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGD-250

Mfr.#: GS8161Z18DGD-250

OMO.#: OMO-GS8161Z18DGD-250

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGT-250I

Mfr.#: GS8161Z18DGT-250I

OMO.#: OMO-GS8161Z18DGT-250I

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGD-333

Mfr.#: GS8161Z18DGD-333

OMO.#: OMO-GS8161Z18DGD-333

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DD-200IV

Mfr.#: GS8161Z18DD-200IV

OMO.#: OMO-GS8161Z18DD-200IV

SRAM 1.8/2.5V 1M x 18 18M
GS8161Z18DD-333

Mfr.#: GS8161Z18DD-333

OMO.#: OMO-GS8161Z18DD-333

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DGT-400

Mfr.#: GS8161Z18DGT-400

OMO.#: OMO-GS8161Z18DGT-400

SRAM 2.5 or 3.3V 1M x 18 18M
GS8161Z18DD-400I

Mfr.#: GS8161Z18DD-400I

OMO.#: OMO-GS8161Z18DD-400I

SRAM 2.5 or 3.3V 1M x 18 18M
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de GS8161Z18DGT-200I es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
15,23 US$
15,23 US$
25
14,14 US$
353,50 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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