IXTH6N120

IXTH6N120
Mfr. #:
IXTH6N120
Fabricante:
Littelfuse
Descripción:
IGBT Transistors MOSFET 6 Amps 1200V 2.700 Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTH6N120 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
FET - Single
Serie
IXTH6N120
embalaje
Tubo
Unidad de peso
0.229281 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
300 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
18 ns
Hora de levantarse
33 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
6 A
Vds-Drain-Source-Breakdown-Voltage
1200 V
Resistencia a la fuente de desagüe de Rds
2.4 Ohms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
42 ns
Tiempo de retardo de encendido típico
28 ns
Modo de canal
Mejora
Tags
IXTH6N1, IXTH6N, IXTH6, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Parte # Mfg. Descripción Valores Precio
IXTH6N120
DISTI # 30284411
IXYS CorporationTrans MOSFET N-CH Si 1.2KV 6A 3-Pin(3+Tab) TO-247AD
RoHS: Compliant
570
  • 30:$9.0133
IXTH6N120
DISTI # IXTH6N120-ND
IXYS CorporationMOSFET N-CH 1200V 6A TO-247AD
RoHS: Compliant
Min Qty: 30
Container: Box
Temporarily Out of Stock
  • 30:$8.2617
IXTH6N120
DISTI # 747-IXTH6N120
IXYS CorporationMOSFET 6 Amps 1200V 2.700 Rds
RoHS: Compliant
113
  • 1:$11.5800
  • 10:$10.4300
  • 25:$8.6800
  • 50:$8.0600
  • 100:$7.8800
  • 250:$7.1900
  • 500:$6.5600
  • 1000:$6.2600
IXTH6N120IXYS CorporationSingle N-Channel 1200 V 700 mOhm 300 W Power Mosfet - TO-247 AD
RoHS: Compliant
967Tube
  • 2:$10.5200
  • 10:$8.8900
  • 25:$8.3100
  • 50:$7.9000
  • 100:$7.5100
IXTH6N120
DISTI # XSFP00000008501
IXYS CorporationPowerField-EffectTransistor,30AI(D),200V,0.075ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-247AC
RoHS: Compliant
780
  • 780:$13.1500
  • 30:$14.0300
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Mfr.#: IXTH140N075L2

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Mfr.#: IXTH54N30T

OMO.#: OMO-IXTH54N30T

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Mfr.#: IXTH96N25T

OMO.#: OMO-IXTH96N25T

MOSFET 96 Amps 250V 36 Rds
IXTH200N085T

Mfr.#: IXTH200N085T

OMO.#: OMO-IXTH200N085T-IXYS-CORPORATION

MOSFET N-CH 85V 200A TO-247
IXTH2N150L

Mfr.#: IXTH2N150L

OMO.#: OMO-IXTH2N150L-IXYS-CORPORATION

MOSFET N-CH 1500V 2A TO-247
IXTH96N20P

Mfr.#: IXTH96N20P

OMO.#: OMO-IXTH96N20P-IXYS-CORPORATION

Darlington Transistors MOSFET 96 Amps 200V 0.024 Rds
IXTH14N100

Mfr.#: IXTH14N100

OMO.#: OMO-IXTH14N100-IXYS-CORPORATION

MOSFET 14 Amps 1000V 0.82 Rds
Disponibilidad
Valores:
Available
En orden:
2000
Ingrese la cantidad:
El precio actual de IXTH6N120 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,80 US$
6,80 US$
10
6,46 US$
64,62 US$
100
6,12 US$
612,23 US$
500
5,78 US$
2 891,05 US$
1000
5,44 US$
5 442,00 US$
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