IXTH14N100

IXTH14N100
Mfr. #:
IXTH14N100
Fabricante:
IXYS
Descripción:
MOSFET 14 Amps 1000V 0.82 Rds
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IXTH14N100 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXTH14N100 Datasheet
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
IXYS
categoria de producto
FET - Single
Serie
IXTH14N100
embalaje
Tubo
Unidad de peso
0.229281 oz
Estilo de montaje
A través del orificio
Paquete-Estuche
TO-247-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
360 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
36 ns
Hora de levantarse
21 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
14 A
Vds-Drain-Source-Breakdown-Voltage
1000 V
Resistencia a la fuente de desagüe de Rds
820 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
80 ns
Tiempo de retardo de encendido típico
24 ns
Modo de canal
Mejora
Tags
IXTH14, IXTH1, IXTH, IXT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***i-Key
MOSFET N-CH 1000V 14A TO-247
***omponent
IXYS power module
***ment14 APAC
MOSFET, N, TO-247; Transistor Polarity:N Channel; Continuous Drain Current Id:14A; Drain Source Voltage Vds:1kV; On Resistance Rds(on):700mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:360W; Transistor Case Style:TO-247; No. of Pins:3; Current Id Max:14A; Current Temperature:25°C; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:820mohm; Package / Case:TO-247; Power Dissipation Pd:360W; Power Dissipation Pd:360W; Pulse Current Idm:56A; Termination Type:Through Hole; Voltage Vds Typ:1kV; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V
Parte # Mfg. Descripción Valores Precio
IXTH14N100
DISTI # IXTH14N100-ND
IXYS CorporationMOSFET N-CH 1000V 14A TO-247
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$15.0183
IXTH14N100
DISTI # 747-IXTH14N100
IXYS CorporationMOSFET 14 Amps 1000V 0.82 Rds
RoHS: Compliant
0
    IXTH14N100IXYS Corporation 284
    • 114:$16.6021
    • 55:$17.6397
    • 1:$20.7526
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    Disponibilidad
    Valores:
    Available
    En orden:
    4000
    Ingrese la cantidad:
    El precio actual de IXTH14N100 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
    Precio de referencia (USD)
    Cantidad
    Precio unitario
    Ext. Precio
    1
    22,53 US$
    22,53 US$
    10
    21,40 US$
    214,01 US$
    100
    20,27 US$
    2 027,47 US$
    500
    19,15 US$
    9 574,20 US$
    1000
    18,02 US$
    18 022,00 US$
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