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SIHP18N50C-E3

SIHP18N50C-E3
Mfr. #:
SIHP18N50C-E3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 500V 18A TO220
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHP18N50C-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
SIHP18N50C-E3 más información
Atributo del producto
Valor de atributo
Tags
SIHP18N5, SIHP18N, SIHP18, SIHP1, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ied Electronics & Automation
SiHP18N50C-E3 N-channel MOSFET Transistor; 17 A; 500 V; 3-Pin TO-220AB
***Components
In a Pack of 5, N-Channel MOSFET, 17 A, 500 V, 3-Pin TO-220AB Vishay SiHP18N50C-E3
***ure Electronics
E Series N-Channel 500 V 0.27 O 76 nC Flange Mount Power Mosfet - TO-220AB
***et Europe
Trans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220AB
***ark
MOSFET,N CH,W DIO,500V,18A,TO220AB
***i-Key
MOSFET N-CH 500V 18A TO220
***
500V N-CHANNEL
***ment14 APAC
MOSFET,N CH,500V,18A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:18A; Drain Source Voltage Vds:500V; On Resistance Rds(on):0.225ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:5V; Power Dissipation Pd:223W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Current Id Max:18A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V
***nell
MOSFET,CANALE N,500V,18A,TO220; Polarità Transistor:Canale N; Corrente Continua di Drain Id:18A; Tensione Drain Source Vds:500V; Resistenza di Attivazione Rds(on):0.225ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:5V; Dissipazione di Potenza Pd:223W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):-; Corrente Id Max:18A; Intervallo Temperatura di Esercizio:Da -55°C a +150°C; Temperatura di Esercizio Min:-55°C; Tensione Vgs Max:30V
Super Junction FET® Gen 9 Power MOSFETs
Vishay Siliconix Super Junction FET® Gen 9 Power MOSFETs are 22A, 600V devices with Super Junction technology for improved on-resistance RDS(on). Vishay Siliconix Power MOSFETs feature on-resistance as low as 0.19Ω (max) and high peak current capability. Vishay Siliconix Super Junction FET Gen 9 Power MOSFETs are optimized for use in switch mode power supplies (SMPS), lighting ballasts, ATX, servers, and LCD TVs.Learn More
Parte # Mfg. Descripción Valores Precio
SIHP18N50C-E3
DISTI # V99:2348_09218738		Vishay IntertechnologiesTrans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant		400
  • 5000:$1.2230
  • 2500:$1.2480
  • 1000:$1.3070
  • 500:$1.6150
  • 100:$1.8320
  • 10:$2.3640
  • 1:$3.1064
SIHP18N50C-E3
DISTI # SIHP18N50C-E3-ND		Vishay SiliconixMOSFET N-CH 500V 18A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube		135In Stock
  • 5000:$1.2558
  • 3000:$1.3041
  • 1000:$1.4007
  • 100:$2.0576
  • 25:$2.4152
  • 10:$2.5600
  • 1:$2.8500
SIHP18N50C-E3
DISTI # 25872705		Vishay IntertechnologiesTrans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220AB
RoHS: Compliant		400
  • 6:$3.1064
SIHP18N50C-E3
DISTI # SIHP18N50C-E3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220AB (Alt: SIHP18N50C-E3)
RoHS: Compliant
Min Qty: 50		Europe - 700
  • 500:€1.1900
  • 300:€1.2900
  • 200:€1.3900
  • 100:€1.6900
  • 50:€2.4900
SIHP18N50C-E3
DISTI # SIHP18N50C-E3		Vishay IntertechnologiesTrans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220AB - Rail/Tube (Alt: SIHP18N50C-E3)
RoHS: Not Compliant
Min Qty: 1000
Container: Tube		Americas - 0
  • 10000:$1.0900
  • 2000:$1.1900
  • 4000:$1.1900
  • 6000:$1.1900
  • 1000:$1.2900
SIHP18N50C-E3
DISTI # 35R0016		Vishay IntertechnologiesTrans MOSFET N-CH 500V 18A 3-Pin(3+Tab) TO-220AB - Bulk (Alt: 35R0016)
RoHS: Not Compliant
Min Qty: 1
Container: Bulk		Americas - 0
  • 1:$1.3400
SIHP18N50C-E3
DISTI # 35R0016		Vishay IntertechnologiesN CHANNEL MOSFET, 560V, 18A,Transistor Polarity:N Channel,Continuous Drain Current Id:18A,Drain Source Voltage Vds:560V,On Resistance Rds(on):0.225ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:5V,No. of Pins:3Pins RoHS Compliant: Yes0
  • 1000:$1.3500
  • 500:$1.6400
  • 100:$1.8600
  • 50:$2.0400
  • 25:$2.2200
  • 10:$2.4000
  • 1:$2.8900
SIHP18N50C-E3
DISTI # 70459583		Vishay SiliconixSiHP18N50C-E3 N-channel MOSFET Transistor,17 A,500 V,3-Pin TO-220AB
RoHS: Compliant		0
  • 1000:$1.9500
  • 2000:$1.8510
SIHP18N50C-E3
DISTI # 781-SIHP18N50C-E3		Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs TO-220AB
RoHS: Compliant		193
  • 1:$2.8600
  • 10:$2.3800
  • 100:$1.8400
  • 500:$1.6200
  • 1000:$1.3400
SIHP18N50C-E3Vishay Intertechnologies 2500
    SIHP18N50C-E3
    DISTI # 8152689    		Vishay IntertechnologiesMOSFET N-CHANNEL 500V 17A TO-220AB, PK75
    • 100:£1.3680
    • 50:£1.7240
    • 5:£2.2260
    SIHP18N50C-E3
    DISTI # 8152689P    		Vishay IntertechnologiesMOSFET N-CHANNEL 500V 17A TO-220AB, TU265
    • 100:£1.3680
    • 50:£1.7240
    SIHP18N50CE3Vishay IntertechnologiesPower Field-Effect Transistor, 18A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
    RoHS: Compliant    		1000
      SIHP18N50C-E3Vishay IntertechnologiesMOSFET 500V Vds 30V Vgs TO-220AB
      RoHS: Compliant      		Americas -
      • 1000:$1.3480
      • 2000:$1.2500
      • 5000:$1.1900
      IRFB18N50KPBFVishay IntertechnologiesMOSFET RECOMMENDED ALT 781-SIHP18N50C-E3
      RoHS: Compliant      		Americas -
        SIHP18N50C-E3
        DISTI # XSKDRABV0026539        		Vishay Intertechnologies 
        RoHS: Compliant        		550 in Stock0 on Order
        • 550:$1.8200
        • 350:$1.9500
        Imagen Parte # Descripción
        SIHP180N60E-GE3

        Mfr.#: SIHP180N60E-GE3

        OMO.#: OMO-SIHP180N60E-GE3

        		 MOSFET 600V Vds 30V Vgs TO-220AB
        SIHP18N50C-E3

        Mfr.#: SIHP18N50C-E3

        OMO.#: OMO-SIHP18N50C-E3

        		 MOSFET 500V Vds 30V Vgs TO-220AB
        SIHP186N60EF-GE3

        Mfr.#: SIHP186N60EF-GE3

        OMO.#: OMO-SIHP186N60EF-GE3

        		 MOSFET Power MOSFET
        SIHP18N60E-GE3

        Mfr.#: SIHP18N60E-GE3

        OMO.#: OMO-SIHP18N60E-GE3

        		 MOSFET 600V Vds 30V Vgs TO-220AB
        SIHP18N50C

        Mfr.#: SIHP18N50C

        OMO.#: OMO-SIHP18N50C-1190

        		 Nuevo y original
        SIHP18N50C-E3

        Mfr.#: SIHP18N50C-E3

        OMO.#: OMO-SIHP18N50C-E3-VISHAY

        		 MOSFET N-CH 500V 18A TO220
        SIHP18N50C-E3,SIHP18N50C

        Mfr.#: SIHP18N50C-E3,SIHP18N50C

        OMO.#: OMO-SIHP18N50C-E3-SIHP18N50C-1190

        		 Nuevo y original
        SIHP18N50CE3

        Mfr.#: SIHP18N50CE3

        OMO.#: OMO-SIHP18N50CE3-1190

        		 Power Field-Effect Transistor, 18A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
        SIHP180N60E-GE3

        Mfr.#: SIHP180N60E-GE3

        OMO.#: OMO-SIHP180N60E-GE3-VISHAY

        		 E Series Power MOSFET TO-220AB, 180 m @ 10V
        SIHP18N60E-GE3

        Mfr.#: SIHP18N60E-GE3

        OMO.#: OMO-SIHP18N60E-GE3-VISHAY

        		 MOSFET N-CH 600V 18A TO220AB
        Disponibilidad
        Valores:
        Available
        En orden:
        1500
        Ingrese la cantidad:
        El precio actual de SIHP18N50C-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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