SIHP18N60E-GE3

SIHP18N60E-GE3
Mfr. #:
SIHP18N60E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 600V Vds 30V Vgs TO-220AB
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHP18N60E-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHP18N60E-GE3 DatasheetSIHP18N60E-GE3 Datasheet (P4-P6)SIHP18N60E-GE3 Datasheet (P7)
ECAD Model:
Más información:
SIHP18N60E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220AB-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
18 A
Rds On - Resistencia de la fuente de drenaje:
176 mOhms
Vgs th - Voltaje umbral puerta-fuente:
4 V
Vgs - Voltaje puerta-fuente:
30 V
Qg - Carga de puerta:
46 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
179 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Carrete
Producto:
Triacs
Serie:
E
Marca:
Vishay / Siliconix
Otoño:
24 ns
Tipo de producto:
MOSFET
Hora de levantarse:
24 ns
Cantidad de paquete de fábrica:
1000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
51 ns
Tiempo típico de retardo de encendido:
17 ns
Unidad de peso:
0.063493 oz
Tags
SIHP18N, SIHP18, SIHP1, SIHP, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 600V 18A 3-Pin TO-220AB
***i-Key
MOSFET N-CH 600V 18A TO220AB
***ark
N-CHANNEL 600V
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHP18N60E-GE3
DISTI # SIHP18N60E-GE3-ND
Vishay SiliconixMOSFET N-CH 600V 18A TO220AB
RoHS: Not compliant
Min Qty: 1000
Container: Tube
Temporarily Out of Stock
  • 1000:$1.6464
SIHP18N60E-GE3
DISTI # SIHP18N60E-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 600V 18A 3-Pin TO-220AB - Tape and Reel (Alt: SIHP18N60E-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel
Americas - 0
  • 6000:$1.3900
  • 10000:$1.3900
  • 2000:$1.4900
  • 4000:$1.4900
  • 1000:$1.5900
SIHP18N60E-GE3
DISTI # 78-SIHP18N60E-GE3
Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-220AB
RoHS: Compliant
0
  • 1000:$1.5700
  • 2000:$1.4900
  • 5000:$1.4400
Imagen Parte # Descripción
SIHP18N50C-E3

Mfr.#: SIHP18N50C-E3

OMO.#: OMO-SIHP18N50C-E3

MOSFET 500V Vds 30V Vgs TO-220AB
SIHP18N60E-GE3

Mfr.#: SIHP18N60E-GE3

OMO.#: OMO-SIHP18N60E-GE3

MOSFET 600V Vds 30V Vgs TO-220AB
SIHP18N50C

Mfr.#: SIHP18N50C

OMO.#: OMO-SIHP18N50C-1190

Nuevo y original
SIHP18N50C-E3

Mfr.#: SIHP18N50C-E3

OMO.#: OMO-SIHP18N50C-E3-VISHAY

MOSFET N-CH 500V 18A TO220
SIHP18N50C-E3,SIHP18N50C

Mfr.#: SIHP18N50C-E3,SIHP18N50C

OMO.#: OMO-SIHP18N50C-E3-SIHP18N50C-1190

Nuevo y original
SIHP18N50CE3

Mfr.#: SIHP18N50CE3

OMO.#: OMO-SIHP18N50CE3-1190

Power Field-Effect Transistor, 18A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
SIHP18N60E-GE3

Mfr.#: SIHP18N60E-GE3

OMO.#: OMO-SIHP18N60E-GE3-VISHAY

MOSFET N-CH 600V 18A TO220AB
Disponibilidad
Valores:
Available
En orden:
1000
Ingrese la cantidad:
El precio actual de SIHP18N60E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Empezar con
Nuevos productos
  • Si7655DN -20 V P-Channel MOSFET
    Vishay's MOSFET enables lower RDS(ON) while providing a slimmer profile and matching PCB pattern.
  • Compare SIHP18N60E-GE3
    SIHP18N50C vs SIHP18N50CE3 vs SIHP18N50CE3SIHP18N50C
  • P-Channel MOSFETs
    Vishay Siliconix's p-channel TrenchFET® GEN III and IV MOSFETs have the lowest on-resistance per area for p-channel MOSFETs.
  • Si8410DB Chipscale N-Channel MOSFET
    Vishay Siliconix's Si8410DB offers an extremely low on-resistance per area of 30 mΩ mm square.
  • 50 A VRPower® Solution (DrMOS)
    Vishay's VRPower® Solution solution that integrates a high- and low-side MOSFET and a MOSFET driver, optimized for synchronous buck applications.
  • PowerPAIR®
    Vishay's PowerPAIR series are dual asymmetric MOSFETs that help to simplify design and decrease conduction losses.
Top