IRF8513PBF

IRF8513PBF
Mfr. #:
IRF8513PBF
Fabricante:
Infineon / IR
Descripción:
MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF8513PBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8513PBF DatasheetIRF8513PBF Datasheet (P4-P6)IRF8513PBF Datasheet (P7-P9)IRF8513PBF Datasheet (P10-P11)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
2 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
8 A
Rds On - Resistencia de la fuente de drenaje:
22.2 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
5.7 nC
Pd - Disipación de energía:
1.5 W
Configuración:
Doble
Embalaje:
Tubo
Altura:
1.75 mm
Longitud:
4.9 mm
Tipo de transistor:
2 N-Channel
Ancho:
3.9 mm
Marca:
Infineon / IR
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
95
Subcategoría:
MOSFET
Parte # Alias:
SP001555762
Unidad de peso:
0.019048 oz
Tags
IRF85, IRF8, IRF
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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Dual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET® Power Mosfet - SOIC-8
***ernational Rectifier
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package
***ark
; Continuous Drain Current, Id:8A; On Resistance, Rds(on):15.5mohm; No. of Pins:8
***nell
DUAL N CH MOSFET, 30V, 8A, SOIC
***et
Trans MOSFET N-CH 30V 8A/11A 8-Pin SO
***ment14 APAC
MOSFET, DUAL N-CH 30V 8A/11A SO8; Module Configuration:Dual; Transistor Polarity:N Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):15.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.4W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:8mA; Package / Case:SOIC; Power Dissipation Pd:2.4W; Power Dissipation Pd:2.4W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V
Parte # Mfg. Descripción Valores Precio
IRF8513PBF
DISTI # IRF8513PBF-ND
Infineon Technologies AGMOSFET 2N-CH 30V 8A/11A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube
Limited Supply - Call
    IRF8513PBF
    DISTI # 70018021
    Infineon Technologies AGMOSFET,DUAL N-CHANNEL,30V,11A,SO-8
    RoHS: Compliant
    0
    • 3800:$1.0600
    • 7600:$1.0390
    • 19000:$1.0070
    • 38000:$0.9650
    • 95000:$0.9010
    IRF8513PBF
    DISTI # 942-IRF8513PBF
    Infineon Technologies AGMOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
    RoHS: Compliant
    0
      IRF8513PBFInfineon Technologies AGDual N-Channel 30 V 15.5 mOhm 5.7 nC HEXFET Power Mosfet - SOIC-8
      RoHS: Compliant
      42Tube
      • 25:$0.4750
      • 300:$0.4150
      • 1250:$0.3600
      IRF8513PBFInternational Rectifier 
      RoHS: Compliant
      Europe - 455
        Imagen Parte # Descripción
        IRF8513PBF

        Mfr.#: IRF8513PBF

        OMO.#: OMO-IRF8513PBF

        MOSFET 30V DUAL N-CH HEXFET 15.5mOhms 6nC
        IRF8513PBF

        Mfr.#: IRF8513PBF

        OMO.#: OMO-IRF8513PBF-INFINEON-TECHNOLOGIES

        MOSFET 2N-CH 30V 8A/11A 8-SOIC
        IRF8513TRPBF

        Mfr.#: IRF8513TRPBF

        OMO.#: OMO-IRF8513TRPBF-INFINEON-TECHNOLOGIES

        MOSFET 2N-CH 30V 8A/11A 8-SOIC
        IRF8520

        Mfr.#: IRF8520

        OMO.#: OMO-IRF8520-1190

        Nuevo y original
        Disponibilidad
        Valores:
        Available
        En orden:
        2500
        Ingrese la cantidad:
        El precio actual de IRF8513PBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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