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SIHB33N60EF-GE3

SIHB33N60EF-GE3
Mfr. #:
SIHB33N60EF-GE3
Fabricante:
Vishay
Descripción:
IGBT Transistors MOSFET N-Channel 600V
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHB33N60EF-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
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ECAD Model:
Más información:
SIHB33N60EF-GE3 más información
Atributo del producto
Valor de atributo
Fabricante
VISHAY / SILICONIX
categoria de producto
Transistores - FET, MOSFET - Sencillo
embalaje
Carrete
Unidad de peso
0.068654 oz
Estilo de montaje
SMD / SMT
Nombre comercial
Serie EF
Paquete-Estuche
TO-263-3
Tecnología
Si
Número de canales
1 Channel
Configuración
Único
Tipo transistor
1 N-Channel
Disipación de potencia Pd
278 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Otoño
48 ns
Hora de levantarse
43 ns
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
33 A
Vds-Drain-Source-Breakdown-Voltage
600 V
Vgs-th-Gate-Source-Threshold-Voltage
2 V
Resistencia a la fuente de desagüe de Rds
98 mOhms
Polaridad del transistor
Canal N
Tiempo de retardo de apagado típico
161 ns
Tiempo de retardo de encendido típico
28 ns
Qg-Gate-Charge
155 nC
Tags
SIHB33, SIHB3, SIHB, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 600V 33A 3-Pin D2PAK
***ure Electronics
600V, 33A, 98MOHM, D2PAK, EF SERIES
***i-Key
MOSFET N-CH 600V 33A TO-263
***ark
N-Channel 600V
***
N-CH 600V T0-263
EF Series High Voltage Power MOSFETs
Vishay / Siliconix EF Series High Voltage Power MOSFETs with Fast Body Diode are N-Channel power MOSFETs with low reverse recovery charge (Qrr) than standard MOSFETs. The EF power MOSFETs come with low Qrr that allows the devices to avoid failure from shoot-through, thermal overstress, and provide low reverse recovery losses. These devices possess ultra-low on-resistance and gate charge that translate into extremely low conduction and switching losses to save energy in high-power, high-performance switch mode applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
Parte # Mfg. Descripción Valores Precio
SIHB33N60EF-GE3
DISTI # SIHB33N60EF-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 33A TO-263
RoHS: Compliant
Min Qty: 1
Container: Bulk		934In Stock
  • 1000:$3.8610
  • 500:$4.4330
  • 100:$5.2910
  • 10:$6.4350
  • 1:$7.1500
SIHB33N60EF-GE3
DISTI # SIHB33N60EF-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 33A 3-Pin D2PAK - Tape and Reel (Alt: SIHB33N60EF-GE3)
RoHS: Not Compliant
Min Qty: 1000
Container: Reel		Americas - 0
  • 1000:$3.6900
  • 2000:$3.5900
  • 4000:$3.4900
  • 6000:$3.3900
  • 10000:$3.2900
SIHB33N60EF-GE3
DISTI # 78-SIHB33N60EF-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		640
  • 1:$6.5000
  • 10:$5.8600
  • 25:$5.3400
  • 100:$4.8200
  • 250:$4.4300
  • 500:$4.3500
SIHB33N60EF-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs D2PAK (TO-263)
RoHS: Compliant		Americas -
  • 3000:$3.3280
Imagen Parte # Descripción
SIHB33N60EF-GE3

Mfr.#: SIHB33N60EF-GE3

OMO.#: OMO-SIHB33N60EF-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB33N60ET1-GE3

Mfr.#: SIHB33N60ET1-GE3

OMO.#: OMO-SIHB33N60ET1-GE3

 MOSFET N-Channel 600V
SIHB33N60E-GE3

Mfr.#: SIHB33N60E-GE3

OMO.#: OMO-SIHB33N60E-GE3

 MOSFET 600V Vds 30V Vgs D2PAK (TO-263)
SIHB33N60EF-GE3

Mfr.#: SIHB33N60EF-GE3

OMO.#: OMO-SIHB33N60EF-GE3-VISHAY

 IGBT Transistors MOSFET N-Channel 600V
SIHB33N60E-E3

Mfr.#: SIHB33N60E-E3

OMO.#: OMO-SIHB33N60E-E3-317

 RF Bipolar Transistors MOSFET N-Channel 600V
SIHB33N60ET1-GE3

Mfr.#: SIHB33N60ET1-GE3

OMO.#: OMO-SIHB33N60ET1-GE3-VISHAY

 RF Bipolar Transistors MOSFET N-Channel 600V
SIHB33N60EF-GE3-CUT TAPE

Mfr.#: SIHB33N60EF-GE3-CUT TAPE

OMO.#: OMO-SIHB33N60EF-GE3-CUT-TAPE-1190

 Nuevo y original
SIHB33N60E

Mfr.#: SIHB33N60E

OMO.#: OMO-SIHB33N60E-1190

 N-CH 600V 99mOhm 33A TO263
SIHB33N60E-GE3

Mfr.#: SIHB33N60E-GE3

OMO.#: OMO-SIHB33N60E-GE3-VISHAY

 MOSFET N-CH 600V 33A TO-263
SIHB33N60ET5-GE3

Mfr.#: SIHB33N60ET5-GE3

OMO.#: OMO-SIHB33N60ET5-GE3-VISHAY

 MOSFET N-CH 600V 33A TO263
Disponibilidad
Valores:
Available
En orden:
4500
Ingrese la cantidad:
El precio actual de SIHB33N60EF-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
4,41 US$
4,41 US$
10
4,19 US$
41,94 US$
100
3,97 US$
397,33 US$
500
3,75 US$
1 876,30 US$
1000
3,53 US$
3 531,80 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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