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SI4830CDY-T1-GE3

SI4830CDY-T1-GE3
Mfr. #:
SI4830CDY-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET 2N-CH 30V 8A 8-SOIC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI4830CDY-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante
Vishay Siliconix
categoria de producto
FET: matrices
Serie
PEQUEÑO PIE
embalaje
Embalaje alternativo de Digi-ReelR
Alias ​​de parte
SI4830CDY-GE3
Unidad de peso
0.017870 oz
Estilo de montaje
SMD / SMT
Paquete-Estuche
8-SOIC (0.154", 3.90mm Width)
Tecnología
Si
Temperatura de funcionamiento
-55°C ~ 150°C (TJ)
Tipo de montaje
Montaje superficial
Número de canales
2 Channel
Paquete de dispositivo de proveedor
8-SO
Configuración
Doble
Tipo FET
2 N-Channel (Half Bridge)
Potencia máxima
2.9W
Tipo transistor
2 N-Channel
Drenaje-a-fuente-voltaje-Vdss
30V
Entrada-Capacitancia-Ciss-Vds
950pF @ 15V
Función FET
Puerta de nivel lógico
Corriente-Continuo-Drenaje-Id-25 ° C
8A
Rds-On-Max-Id-Vgs
20 mOhm @ 8A, 10V
Vgs-th-Max-Id
3V @ 1mA
Puerta-Carga-Qg-Vgs
25nC @ 10V
Disipación de potencia Pd
2 W
Temperatura máxima de funcionamiento
+ 150 C
Temperatura mínima de funcionamiento
- 55 C
Vgs-Puerta-Fuente-Voltaje
20 V
Id-corriente-de-drenaje-continua
5.7 A
Vds-Drain-Source-Breakdown-Voltage
30 V
Resistencia a la fuente de desagüe de Rds
20 mOhms
Polaridad del transistor
Canal N
Qg-Gate-Charge
16.5 nC
Transconductancia directa-Mín.
29 S
Tags
SI4830CDY-T, SI4830C, SI4830, SI483, SI48, SI4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si4830CDY Series Dual N-Channel 30 V 20 mOhm 2.9 W Surface Mount Mosfet - SOIC-8
***ied Electronics & Automation
MOSFET,Dual N-Ch,VDSS 30V,RDS(ON) 0.017Ohm,ID 5.7A,SO-8,PD 1.1W,VGS +/-20V,gFS 1
***ical
Trans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R
Parte # Mfg. Descripción Valores Precio
SI4830CDY-T1-GE3
DISTI # SI4830CDY-T1-GE3TR-ND		Vishay SiliconixMOSFET 2N-CH 30V 8A 8-SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
  • 2500:$0.5405
SI4830CDY-T1-GE3
DISTI # SI4830CDY-T1-GE3CT-ND		Vishay SiliconixMOSFET 2N-CH 30V 8A 8-SOIC
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Limited Supply - Call
    SI4830CDY-T1-GE3
    DISTI # SI4830CDY-T1-GE3DKR-ND    		Vishay SiliconixMOSFET 2N-CH 30V 8A 8-SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		Limited Supply - Call
      SI4830CDY-T1-GE3
      DISTI # SI4830CDY-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R (Alt: SI4830CDY-T1-GE3)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Europe - 0
      • 2500:€0.8589
      • 5000:€0.6159
      • 10000:€0.4999
      • 15000:€0.4419
      • 25000:€0.4229
      SI4830CDY-T1-GE3
      DISTI # SI4830CDY-T1-GE3      		Vishay IntertechnologiesTrans MOSFET N-CH 30V 7.5A 8-Pin SOIC N T/R (Alt: SI4830CDY-T1-GE3)
      RoHS: Compliant
      Min Qty: 2500
      Container: Tape and Reel      		Asia - 0
        SI4830CDY-T1-GE3
        DISTI # 97W2659        		Vishay IntertechnologiesDual MOSFET, Dual N Channel, 7.1 A, 30 V, 0.156 ohm, 10 V, 1 V , RoHS Compliant: Yes0
          SI4830CDY-T1-GE3
          DISTI # 70026112          		Vishay SiliconixMOSFET,Dual N-Ch,VDSS 30V,RDS(ON) 0.017Ohm,ID 5.7A,SO-8,PD 1.1W,VGS +/-20V,gFS 1
          RoHS: Compliant          		0
          • 2500:$0.6670
          • 5000:$0.6420
          SI4830CDY-T1-GE3
          DISTI # 781-SI4830CDY-T1-GE3          		Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
          RoHS: Compliant          		0
          • 1:$1.2300
          • 10:$1.0200
          • 100:$0.7760
          • 500:$0.6670
          • 1000:$0.5850
          SI4830CDY-T1-GE3
          DISTI # 2335318          		Vishay IntertechnologiesMOSFET, DUAL N CH, 30V, 7.1A, SOIC
          RoHS: Compliant          		0
          • 1:$1.9500
          • 10:$1.6200
          • 100:$1.2300
          • 500:$1.0700
          • 1000:$0.9270
          • 2500:$0.9270
          SI4830CDY-T1-GE3Vishay IntertechnologiesMOSFET 30V Vds 20V Vgs SO-8
          RoHS: Compliant          		Americas -
            Imagen Parte # Descripción
            SI4830CDY-T1-GE3

            Mfr.#: SI4830CDY-T1-GE3

            OMO.#: OMO-SI4830CDY-T1-GE3

            		 MOSFET RECOMMENDED ALT 781-SI4816BDY-T1-GE3
            SI4830CDY-T1-E3

            Mfr.#: SI4830CDY-T1-E3

            OMO.#: OMO-SI4830CDY-T1-E3-VISHAY

            		 RF Bipolar Transistors MOSFET 30V 8.0A 2.9W 20mohm @ 10V
            SI4830CDY

            Mfr.#: SI4830CDY

            OMO.#: OMO-SI4830CDY-1190

            		 Nuevo y original
            SI4830CDY-T1

            Mfr.#: SI4830CDY-T1

            OMO.#: OMO-SI4830CDY-T1-1190

            		 Nuevo y original
            SI4830CDY-T1-GE3

            Mfr.#: SI4830CDY-T1-GE3

            OMO.#: OMO-SI4830CDY-T1-GE3-VISHAY

            		 MOSFET 2N-CH 30V 8A 8-SOIC
            Disponibilidad
            Valores:
            Available
            En orden:
            1500
            Ingrese la cantidad:
            El precio actual de SI4830CDY-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
            Precio de referencia (USD)
            Cantidad
            Precio unitario
            Ext. Precio
            1
            0,67 US$
            0,67 US$
            10
            0,64 US$
            6,41 US$
            100
            0,61 US$
            60,74 US$
            500
            0,57 US$
            286,80 US$
            1000
            0,54 US$
            539,90 US$
            Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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