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IRF8707GPBF

IRF8707GPBF
Mfr. #:
IRF8707GPBF
Fabricante:
Infineon / IR
Descripción:
MOSFET HEXFET 30V VDSS 11.9mOhm 10V 6.2nC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IRF8707GPBF Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IRF8707GPBF DatasheetIRF8707GPBF Datasheet (P4-P6)IRF8707GPBF Datasheet (P7-P9)
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
SO-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
30 V
Id - Corriente de drenaje continua:
11 A
Rds On - Resistencia de la fuente de drenaje:
17.5 mOhms
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
6.2 nC
Pd - Disipación de energía:
2.5 W
Configuración:
Único
Embalaje:
Tubo
Altura:
1.75 mm
Longitud:
4.9 mm
Tipo de transistor:
1 N-Channel
Ancho:
3.9 mm
Marca:
Infineon / IR
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
95
Subcategoría:
MOSFET
Parte # Alias:
SP001575436
Unidad de peso:
0.019048 oz
Tags
IRF8707G, IRF870, IRF87, IRF8, IRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ernational Rectifier
Halogen Free and Lead Free 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
***ical
Trans MOSFET N-CH 30V 11A 8-Pin SOIC
***ied Electronics & Automation
MOSFET, 30V, 11A, 11.9 MOHM, 6.2 NC QG, SO-8, HALOGEN-FREE
***th Star Micro
MOSFET N-CH 30V 11A 8-SOIC
***nell
N CHANNEL MOSFET, 30V, 11mA
***ark
N CHANNEL MOSFET, 30V, 11mA; Transistor Polarity:N Channel; Continuous Drain Current, Id:11mA; Drain Source Voltage, Vds:30V; On Resistance, Rds(on):0.119ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes
***ment14 APAC
N CHANNEL MOSFET, 30V, 11mA; Transistor; N CHANNEL MOSFET, 30V, 11mA; Transistor Polarity:N Channel; Continuous Drain Current Id:11mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):119mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1.8V; No. of Pins:8
Parte # Mfg. Descripción Valores Precio
IRF8707GPBF
DISTI # IRF8707GPBF-ND		Infineon Technologies AGMOSFET N-CH 30V 11A 8-SOIC
RoHS: Compliant
Min Qty: 3800
Container: Tube		Limited Supply - Call
    IRF8707GPBF
    DISTI # 70019207    		Infineon Technologies AGMOSFET,30V,11A,11.9 MOHM,6.2 NC QG,SO-8,HALOGEN-FREE
    RoHS: Compliant    		0
    • 3800:$0.3120
    • 7600:$0.2840
    • 11400:$0.2600
    • 15200:$0.2400
    • 19000:$0.2230
    IRF8707GPBF
    DISTI # 942-IRF8707GPBF    		Infineon Technologies AGMOSFET HEXFET 30V VDSS 11.9mOhm 10V 6.2nC
    RoHS: Compliant    		0
      IRF8707GPBFInternational Rectifier 
      RoHS: Compliant      		Europe - 1140
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        Disponibilidad
        Valores:
        Available
        En orden:
        1000
        Ingrese la cantidad:
        El precio actual de IRF8707GPBF es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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