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IPB50CN10N G

IPB50CN10N G
Mfr. #:
IPB50CN10N G
Fabricante:
Infineon Technologies AG
Descripción:
IGBT Transistors MOSFET N-Ch 100V 20A D2PAK-2
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB50CN10N G Ficha de datos
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ECAD Model:
Atributo del producto
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Tags
IPB50CN10NG, IPB50C, IPB50, IPB5, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CHANNEL, 100V, 20A, TO-263
***el Electronic
Power Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3
***nell
MOSFET, N CH, 20A, 100V, PG-TO263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 20A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.038ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 44W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: 20A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +175°C; Transistor Type: Power MOSFET; Voltage Vgs Max: 20V
Parte # Mfg. Descripción Valores Precio
IPB50CN10NGATMA1
DISTI # IPB50CN10NGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 20A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB50CN10NGATMA1
    DISTI # IPB50CN10NGATMA1    		Infineon Technologies AGTrans MOSFET N-CH 100V 20A 3-Pin TO-263 T/R - Bulk (Alt: IPB50CN10NGATMA1)
    Min Qty: 642
    Container: Bulk    		Americas - 0
    • 6420:$0.4949
    • 3210:$0.5039
    • 1926:$0.5219
    • 1284:$0.5409
    • 642:$0.5609
    IPB50CN10NGATMA1Infineon Technologies AGPower Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
    RoHS: Not Compliant    		7000
    • 1000:$0.5100
    • 500:$0.5400
    • 100:$0.5600
    • 25:$0.5900
    • 1:$0.6300
    Imagen Parte # Descripción
    IPB50CN10N

    Mfr.#: IPB50CN10N

    OMO.#: OMO-IPB50CN10N-1190

    		 Nuevo y original
    IPB50CN10NG

    Mfr.#: IPB50CN10NG

    OMO.#: OMO-IPB50CN10NG-1190

    		 Nuevo y original
    IPB50CN10NGATMA1

    Mfr.#: IPB50CN10NGATMA1

    OMO.#: OMO-IPB50CN10NGATMA1-INFINEON-TECHNOLOGIES

    		 MOSFET N-CH 100V 20A TO263-3
    IPB50CN10N G

    Mfr.#: IPB50CN10N G

    OMO.#: OMO-IPB50CN10N-G-126

    		 IGBT Transistors MOSFET N-Ch 100V 20A D2PAK-2
    Disponibilidad
    Valores:
    Available
    En orden:
    3000
    Ingrese la cantidad:
    El precio actual de IPB50CN10N G es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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