OMO ElectronicOMO Electronic
Expand menu
Hola, regístrateMi cuenta
0 Carro

IPB50CN10NGATMA1

IPB50CN10NGATMA1
Mfr. #:
IPB50CN10NGATMA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET N-CH 100V 20A TO263-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPB50CN10NGATMA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Tags
IPB50CN10NG, IPB50C, IPB50, IPB5, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 100V 20A 3-Pin TO-263 T/R
***ponent Stockers USA
20 A 100 V 0.05 ohm N-CHANNEL Si POWER MOSFET TO-263AB
*** Electronics
OPTLMOS N-CHANNEL POWER MOSFET
***i-Key
MOSFET N-CH 100V 22A D2PAK
***i-Key
MOSFET N-CH 100V 22A D2PAK
***el Electronic
IC REG CTRLR BUCK 48VQFP
***ure Electronics
N-Channel 100 V 36 mOhm Surface Mount PowerTrench Mosfet - D2PAK-3
***emi
N-Channel Power Trench® MOSFET, 100V, 32A, 36mΩ
***Yang
Trans MOSFET N-CH 100V 6A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel
***ment14 APAC
MOSFET, N CH, 100V, 32A, TO-263AB-3; Transistor Polarity:N Channel; Continuous Drain Current Id:32A; Source Voltage Vds:100V; On Resistance
***r Electronics
Power Field-Effect Transistor, 6A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***nell
MOSFET, N CH, 100V, 32A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 32A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 95W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***Yang
MOSFET 100V NCh PowerMOSFET UltraFET - Bulk
***el Electronic
MOSFET N-CH 100V 33A D2PAK
***i-Key
N CHANNEL ULTRAFET 100V, 33A, 4
***el Nordic
Contact for details
***i-Key
MOSFET N-CH 100V 38A D2PAK
***ser
MOSFETs 38a,100V, 0.036 Ohm Logic Level N-Ch
***i-Key Marketplace
N-CHANNEL POWER MOSFET
***el Nordic
Contact for details
***ure Electronics
Single P-Channel 100V 117 mOhm 110 nC HEXFET® Power Mosfet - D2PAK
***ineon SCT
-100V Single P-Channel HEXFET Power MOSFET in a D2-Pak package, D2PAK-3, RoHS
***fin
Transistor PNP Mos IRF9540/SO/IRF9540NS INTERNATIONAL RECTIFIER Ampere=19 V=100 TO263
***p One Stop
Trans MOSFET P-CH 100V 23A 3-Pin(2+Tab) D2PAK Tube
***(Formerly Allied Electronics)
MOSFET, Power,P-Ch,VDSS -100V,RDS(ON) 0.117Ohm,ID -23A,D2Pak,PD 140W,VGS +/-20V
***nell
MOSFET, P D2-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: 23A; Drain Source Voltage Vds: -100V; On Resistance Rds(on): 0.117ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipatio
***roFlash
Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***ark
Channel Type:P Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:23A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:4V; Power Dissipation:140W; No. of Pins:3Pins RoHS Compliant: Yes
Parte # Mfg. Descripción Valores Precio
IPB50CN10NGATMA1
DISTI # IPB50CN10NGATMA1TR-ND		Infineon Technologies AGMOSFET N-CH 100V 20A TO263-3
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)		Limited Supply - Call
    IPB50CN10NGATMA1
    DISTI # IPB50CN10NGATMA1    		Infineon Technologies AGTrans MOSFET N-CH 100V 20A 3-Pin TO-263 T/R - Bulk (Alt: IPB50CN10NGATMA1)
    Min Qty: 642
    Container: Bulk    		Americas - 0
    • 6420:$0.4949
    • 3210:$0.5039
    • 1926:$0.5219
    • 1284:$0.5409
    • 642:$0.5609
    IPB50CN10N G
    DISTI # 726-IPB50CN10NG    		Infineon Technologies AGMOSFET N-Ch 100V 20A D2PAK-2
    RoHS: Compliant    		0
      IPB50CN10NGATMA1Infineon Technologies AGPower Field-Effect Transistor, 20A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
      RoHS: Not Compliant      		7000
      • 1000:$0.5100
      • 500:$0.5400
      • 100:$0.5600
      • 25:$0.5900
      • 1:$0.6300
      Imagen Parte # Descripción
      IPB50CN10N

      Mfr.#: IPB50CN10N

      OMO.#: OMO-IPB50CN10N-1190

      		 Nuevo y original
      IPB50CN10NG

      Mfr.#: IPB50CN10NG

      OMO.#: OMO-IPB50CN10NG-1190

      		 Nuevo y original
      IPB50CN10NGATMA1

      Mfr.#: IPB50CN10NGATMA1

      OMO.#: OMO-IPB50CN10NGATMA1-INFINEON-TECHNOLOGIES

      		 MOSFET N-CH 100V 20A TO263-3
      IPB50CN10N G

      Mfr.#: IPB50CN10N G

      OMO.#: OMO-IPB50CN10N-G-126

      		 IGBT Transistors MOSFET N-Ch 100V 20A D2PAK-2
      Disponibilidad
      Valores:
      Available
      En orden:
      2000
      Ingrese la cantidad:
      El precio actual de IPB50CN10NGATMA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
      Precio de referencia (USD)
      Cantidad
      Precio unitario
      Ext. Precio
      1
      0,74 US$
      0,74 US$
      10
      0,71 US$
      7,05 US$
      100
      0,67 US$
      66,81 US$
      500
      0,63 US$
      315,50 US$
      1000
      0,59 US$
      593,90 US$
      Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
      Empezar con
      Nuevos productos
      More Newest Products
      Top