IKQ40N120CH3XKSA1

IKQ40N120CH3XKSA1
Mfr. #:
IKQ40N120CH3XKSA1
Fabricante:
Infineon Technologies
Descripción:
IGBT HS SW 1200V 40A TO-247-3
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IKQ40N120CH3XKSA1 Ficha de datos
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ECAD Model:
Atributo del producto
Valor de atributo
Tags
IKQ4, IKQ
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We provide 90-360 days warranty.

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Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***Components
In a Tube of 30, Infineon IKQ40N120CH3XKSA1 P-Channel IGBT, 80 A 1200 V, 3-Pin TO-247
***et Europe
High speed switching series third generation IGBT
***i-Key
IGBT HS SW 1200V 40A TO-247-3
***ark
Igbt, 1.2Kv, 80A, 500W, To-247; Dc Collector Current:80A; Collector Emitter Saturation Voltage Vce(On):2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(Br)Ceo:1.2Kv; Transistor Case Style:to-247; No. Of Pins:3Pins; Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. IGBT, 1.2KV, 80A, 500W, TO-247; DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):2V; Power Dissipation Pd:500W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor Case Style:TO-247; No. of Pins:3Pins; Operating Temperature Max:175°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
IGBT, 1.2KV, 80A, 500W, TO-247; Corrente di Collettore CC:80A; Tensione Saturaz Collettore-Emettitore Vce(on):2V; Dissipazione di Potenza Pd:500W; Tensione Collettore-Emettitore V(br)ceo:1.2kV; Modello Case Transistor:TO-247; No. di Pin:3Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:-; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
***ineon
Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode. | Summary of Features: High power density up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint; 20% lower R th(jh) compared to TO-247 3 pin; Extended collector-emitter pin creepage of 4.25 mm; Extended clip creepage due to fully encapsulated front side of the package | Benefits: Higher system power density I c increase keeping the same system thermal performance; Lower thermal resistance R th(jh) and improved by ~15% heat dissipation capability of TO-247PLUS vs TO-247; Higher reliability, extended lifetime of the device | Target Applications: Uninterruptable power suppliers (UPS); Battery Charger; Energy storage; Portable welding converter
Parte # Mfg. Descripción Valores Precio
IKQ40N120CH3XKSA1
DISTI # IKQ40N120CH3XKSA1-ND
Infineon Technologies AGIGBT HS SW 1200V 40A TO-247-3
RoHS: Compliant
Min Qty: 1
Container: Tube
191In Stock
  • 720:$6.3015
  • 240:$7.2366
  • 25:$8.3344
  • 10:$8.7410
  • 1:$9.6800
IKQ40N120CH3XKSA1
DISTI # IKQ40N120CH3XKSA1
Infineon Technologies AGHigh speed switching series third generation IGBT - Rail/Tube (Alt: IKQ40N120CH3XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube
Americas - 0
  • 2400:$4.8900
  • 1440:$4.9900
  • 960:$5.0900
  • 480:$5.2900
  • 240:$5.4900
IKQ40N120CH3XKSA1
DISTI # SP001272706
Infineon Technologies AGHigh speed switching series third generation IGBT (Alt: SP001272706)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1000:€3.9900
  • 500:€4.2900
  • 100:€4.4900
  • 50:€4.5900
  • 25:€4.7900
  • 10:€4.9900
  • 1:€5.4900
IKQ40N120CH3XKSA1
DISTI # 93AC7069
Infineon Technologies AGIGBT, 1.2KV, 80A, 500W, TO-247,DC Collector Current:80A,Collector Emitter Saturation Voltage Vce(on):2V,Power Dissipation Pd:500W,Collector Emitter Voltage V(br)ceo:1.2kV,Transistor Case Style:TO-247,No. of Pins:3Pins,RoHS Compliant: Yes170
  • 500:$6.0600
  • 250:$6.6500
  • 100:$6.9600
  • 50:$7.4800
  • 25:$8.0100
  • 10:$8.4000
  • 1:$9.3000
IKQ40N120CH3XKSA1
DISTI # 726-IKQ40N120CH3XKSA
Infineon Technologies AGIGBT Transistors IGBT PRODUCTS
RoHS: Compliant
968
  • 1:$9.2100
  • 10:$8.3200
  • 25:$7.9300
  • 100:$6.8900
  • 250:$6.5800
  • 500:$6.0000
IKQ40N120CH3XKSA1
DISTI # 1623286
Infineon Technologies AGIGBT 1200V 40A HIGHSPEED3 DIODE TO-247, TU106
  • 600:£4.0310
  • 300:£4.3190
  • 150:£4.6510
  • 30:£5.0390
IKQ40N120CH3XKSA1
DISTI # 2986434
Infineon Technologies AGIGBT, 1.2KV, 80A, 500W, TO-247240
  • 100:£5.0000
  • 50:£5.3800
  • 10:£5.7500
  • 5:£6.6700
  • 1:£7.2000
IKQ40N120CH3XKSA1
DISTI # 2986434
Infineon Technologies AGIGBT, 1.2KV, 80A, 500W, TO-247
RoHS: Compliant
170
  • 100:$7.3000
  • 250:$7.3000
  • 50:$8.8600
  • 10:$9.0300
  • 5:$9.7300
  • 1:$10.8000
Imagen Parte # Descripción
IKQ40N120CH3XKSA1

Mfr.#: IKQ40N120CH3XKSA1

OMO.#: OMO-IKQ40N120CH3XKSA1

IGBT Transistors IGBT PRODUCTS
IKQ40N120CT2XKSA1

Mfr.#: IKQ40N120CT2XKSA1

OMO.#: OMO-IKQ40N120CT2XKSA1

IGBT Transistors IGBT PRODUCTS
IKQ40N120CT2XKSA1

Mfr.#: IKQ40N120CT2XKSA1

OMO.#: OMO-IKQ40N120CT2XKSA1-INFINEON-TECHNOLOGIES

IGBT HS SW 1200V 40A TO-247-3
IKQ40N120CH3

Mfr.#: IKQ40N120CH3

OMO.#: OMO-IKQ40N120CH3-1190

Trans IGBT Chip N-CH 1200V 80A 3-Pin TO-247 Tube (Alt: IKQ40N120CH3)
IKQ40N120CH3XKSA1

Mfr.#: IKQ40N120CH3XKSA1

OMO.#: OMO-IKQ40N120CH3XKSA1-INFINEON-TECHNOLOGIES

IGBT HS SW 1200V 40A TO-247-3
Disponibilidad
Valores:
Available
En orden:
1500
Ingrese la cantidad:
El precio actual de IKQ40N120CH3XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
6,80 US$
6,80 US$
10
6,46 US$
64,61 US$
100
6,12 US$
612,10 US$
500
5,78 US$
2 890,50 US$
1000
5,44 US$
5 440,90 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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