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SIDR870ADP-T1-GE3

SIDR870ADP-T1-GE3
Mfr. #:
SIDR870ADP-T1-GE3
Fabricante:
Vishay
Descripción:
MOSFET N-CH 100V 95A SO-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIDR870ADP-T1-GE3 Ficha de datos
Entrega:
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ECAD Model:
Más información:
SIDR870ADP-T1-GE3 más información
Atributo del producto
Valor de atributo
Tags
SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TrenchFET Power MOSFET Single N-Channel 100V VDS ±20V VGS 95A ID 8-Pin PowerPAK SOIC T/R
***ical
Trans MOSFET N-CH 100V 95A 8-Pin PowerPAK SO EP T/R
***i-Key
MOSFET N-CH 100V 95A SO-8
***ark
Mosfet, N-Ch, 100V, 95A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:95A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0055Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 95A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:95A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-N, 100V, 95A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:95A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0055ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Parte # Mfg. Descripción Valores Precio
SIDR870ADP-T1-GE3
DISTI # V72:2272_21388906		Vishay IntertechnologiesSIDR870ADP-T1-GE35870
  • 75000:$0.8958
  • 30000:$0.9084
  • 15000:$0.9209
  • 6000:$0.9335
  • 3000:$0.9460
  • 1000:$0.9585
  • 500:$1.1163
  • 250:$1.1842
  • 100:$1.3246
  • 50:$1.5084
  • 25:$1.6760
  • 10:$1.6987
  • 1:$2.2457
SIDR870ADP-T1-GE3
DISTI # V99:2348_21388906		Vishay IntertechnologiesSIDR870ADP-T1-GE30
  • 6000:$0.9696
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 100V 95A SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		5514In Stock
  • 1000:$1.0374
  • 500:$1.2520
  • 100:$1.5238
  • 10:$1.8960
  • 1:$2.1100
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 100V 95A SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		5514In Stock
  • 1000:$1.0374
  • 500:$1.2520
  • 100:$1.5238
  • 10:$1.8960
  • 1:$2.1100
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 100V 95A SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		3000In Stock
  • 6000:$0.9030
  • 3000:$0.9377
SIDR870ADP-T1-GE3
DISTI # 31950099		Vishay IntertechnologiesSIDR870ADP-T1-GE35870
  • 7:$2.2457
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3		Vishay IntertechnologiesTrenchFET Power MOSFET Single N-Channel 100V VDS ±20V VGS 95A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIDR870ADP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel		Americas - 0
  • 60000:$0.8479
  • 30000:$0.8709
  • 18000:$0.8959
  • 12000:$0.9339
  • 6000:$0.9619
SIDR870ADP-T1-GE3
DISTI # 59AC7342		Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET0
  • 10000:$0.8270
  • 6000:$0.8600
  • 4000:$0.8930
  • 2000:$0.9930
  • 1000:$1.0500
  • 1:$1.1200
SIDR870ADP-T1-GE3
DISTI # 50AC9645		Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:95A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes5622
  • 500:$1.1700
  • 250:$1.2600
  • 100:$1.3400
  • 50:$1.4700
  • 25:$1.6000
  • 10:$1.7300
  • 1:$2.0800
SIDR870ADP-T1-GE3
DISTI # 78-SIDR870ADP-T1-GE3		Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
RoHS: Compliant		8917
  • 1:$2.0600
  • 10:$1.7100
  • 100:$1.3300
  • 500:$1.1600
  • 1000:$0.9600
  • 3000:$0.8940
  • 6000:$0.8600
  • 9000:$0.8270
SIDR870ADP-T1-GE3
DISTI # 2846628		Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, POWERPAK SO
RoHS: Compliant		5622
  • 1000:$1.5600
  • 500:$1.8800
  • 100:$2.2800
  • 10:$2.8400
  • 1:$3.1600
SIDR870ADP-T1-GE3
DISTI # 2846628		Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, POWERPAK SO5652
  • 500:£0.8910
  • 250:£0.9560
  • 100:£1.0200
  • 10:£1.3400
  • 1:£1.8000
Imagen Parte # Descripción
SIDR870ADP-T1-GE3

Mfr.#: SIDR870ADP-T1-GE3

OMO.#: OMO-SIDR870ADP-T1-GE3

 MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
SIDR870ADP-T1-GE3

Mfr.#: SIDR870ADP-T1-GE3

OMO.#: OMO-SIDR870ADP-T1-GE3-VISHAY

 MOSFET N-CH 100V 95A SO-8
Disponibilidad
Valores:
Available
En orden:
4000
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El precio actual de SIDR870ADP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
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Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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