SIDR870ADP-T1-GE3

SIDR870ADP-T1-GE3
Mfr. #:
SIDR870ADP-T1-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIDR870ADP-T1-GE3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIDR870ADP-T1-GE3 DatasheetSIDR870ADP-T1-GE3 Datasheet (P4-P6)SIDR870ADP-T1-GE3 Datasheet (P7-P8)
ECAD Model:
Más información:
SIDR870ADP-T1-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-SO-8DC-8
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
100 V
Id - Corriente de drenaje continua:
95 A
Rds On - Resistencia de la fuente de drenaje:
10.5 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
25.5 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
125 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Serie:
SID
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
68 S
Otoño:
9 ns
Tipo de producto:
MOSFET
Hora de levantarse:
15 ns
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
33 ns
Tiempo típico de retardo de encendido:
17 ns
Tags
SIDR, SID
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
TrenchFET Power MOSFET Single N-Channel 100V VDS ±20V VGS 95A ID 8-Pin PowerPAK SOIC T/R
***ical
Trans MOSFET N-CH 100V 95A 8-Pin PowerPAK SO EP T/R
***i-Key
MOSFET N-CH 100V 95A SO-8
***ark
Mosfet, N-Ch, 100V, 95A, Powerpak So; Transistor Polarity:n Channel; Continuous Drain Current Id:95A; Drain Source Voltage Vds:100V; On Resistance Rds(On):0.0055Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 100V, 95A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:95A; Drain Source Voltage Vds:100V; On Resistance Rds(on):0.0055ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Pd:125W; Transistor Case Style:PowerPAK SO; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)
***nell
MOSFET, CA-N, 100V, 95A, POWERPAK SO; Polarità Transistor:Canale N; Corrente Continua di Drain Id:95A; Tensione Drain Source Vds:100V; Resistenza di Attivazione Rds(on):0.0055ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:3V; Dissipazione di Potenza Pd:125W; Modello Case Transistor:PowerPAK SO; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)
TrenchFET® Gen IV Top-Side Double Cooling MOSFETs
Vishay TrenchFET® Gen IV Top-Side Double Cooling MOSFETs feature top-side cooling and offer an additional venue for thermal transfer. These MOSFETs come in the PowerPAK® SO-8DC package. The TrenchFET double cooling MOSFETs offer variants with different drain-source breakdown voltages of 25V, 30V, 40V, 60V, 80V, 100V, 150V, and 200V. These N-channel MOSFETs operate at a temperature range from -55°C to 150°C. The TrenchFET MOSFETs can be utilized for product-specific applications including synchronous rectification, DC/DC conversion, power supplies, battery management, and others.
Parte # Mfg. Descripción Valores Precio
SIDR870ADP-T1-GE3
DISTI # V72:2272_21388906
Vishay IntertechnologiesSIDR870ADP-T1-GE35870
  • 75000:$0.8958
  • 30000:$0.9084
  • 15000:$0.9209
  • 6000:$0.9335
  • 3000:$0.9460
  • 1000:$0.9585
  • 500:$1.1163
  • 250:$1.1842
  • 100:$1.3246
  • 50:$1.5084
  • 25:$1.6760
  • 10:$1.6987
  • 1:$2.2457
SIDR870ADP-T1-GE3
DISTI # V99:2348_21388906
Vishay IntertechnologiesSIDR870ADP-T1-GE30
  • 6000:$0.9696
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3CT-ND
Vishay SiliconixMOSFET N-CH 100V 95A SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
5514In Stock
  • 1000:$1.0374
  • 500:$1.2520
  • 100:$1.5238
  • 10:$1.8960
  • 1:$2.1100
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3DKR-ND
Vishay SiliconixMOSFET N-CH 100V 95A SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
5514In Stock
  • 1000:$1.0374
  • 500:$1.2520
  • 100:$1.5238
  • 10:$1.8960
  • 1:$2.1100
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3TR-ND
Vishay SiliconixMOSFET N-CH 100V 95A SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
3000In Stock
  • 6000:$0.9030
  • 3000:$0.9377
SIDR870ADP-T1-GE3
DISTI # 31950099
Vishay IntertechnologiesSIDR870ADP-T1-GE35870
  • 7:$2.2457
SIDR870ADP-T1-GE3
DISTI # SIDR870ADP-T1-GE3
Vishay IntertechnologiesTrenchFET Power MOSFET Single N-Channel 100V VDS ±20V VGS 95A ID 8-Pin PowerPAK SOIC T/R - Tape and Reel (Alt: SIDR870ADP-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.8479
  • 30000:$0.8709
  • 18000:$0.8959
  • 12000:$0.9339
  • 6000:$0.9619
SIDR870ADP-T1-GE3
DISTI # 59AC7342
Vishay IntertechnologiesN-CHANNEL 100-V (D-S) MOSFET0
  • 10000:$0.8270
  • 6000:$0.8600
  • 4000:$0.8930
  • 2000:$0.9930
  • 1000:$1.0500
  • 1:$1.1200
SIDR870ADP-T1-GE3
DISTI # 50AC9645
Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, POWERPAK SO,Transistor Polarity:N Channel,Continuous Drain Current Id:95A,Drain Source Voltage Vds:100V,On Resistance Rds(on):0.0055ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes5622
  • 500:$1.1700
  • 250:$1.2600
  • 100:$1.3400
  • 50:$1.4700
  • 25:$1.6000
  • 10:$1.7300
  • 1:$2.0800
SIDR870ADP-T1-GE3
DISTI # 78-SIDR870ADP-T1-GE3
Vishay IntertechnologiesMOSFET 100V Vds 20V Vgs PowerPAK SO-8DC
RoHS: Compliant
8917
  • 1:$2.0600
  • 10:$1.7100
  • 100:$1.3300
  • 500:$1.1600
  • 1000:$0.9600
  • 3000:$0.8940
  • 6000:$0.8600
  • 9000:$0.8270
SIDR870ADP-T1-GE3
DISTI # 2846628
Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, POWERPAK SO
RoHS: Compliant
5622
  • 1000:$1.5600
  • 500:$1.8800
  • 100:$2.2800
  • 10:$2.8400
  • 1:$3.1600
SIDR870ADP-T1-GE3
DISTI # 2846628
Vishay IntertechnologiesMOSFET, N-CH, 100V, 95A, POWERPAK SO5652
  • 500:£0.8910
  • 250:£0.9560
  • 100:£1.0200
  • 10:£1.3400
  • 1:£1.8000
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74LVCH16374ADGGG4

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Flip Flops 16-Bit Edge-Triggerd 48-TSSOP
B360-13-F

Mfr.#: B360-13-F

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Schottky Diodes & Rectifiers 60V 3A
TPS40210DGQ

Mfr.#: TPS40210DGQ

OMO.#: OMO-TPS40210DGQ

Switching Controllers Wide Input Rnge Crnt Mode Boost Cntrlr
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OMO.#: OMO-CRCW120610K0FKEA

Thick Film Resistors - SMD 1/4watt 10Kohms 1%
MAX4080SAUA+

Mfr.#: MAX4080SAUA+

OMO.#: OMO-MAX4080SAUA--MAXIM-INTEGRATED

Current Sense Amplifiers 76V High-Side Crnt Sense Amp w/V Out
ADA4700-1ARDZ

Mfr.#: ADA4700-1ARDZ

OMO.#: OMO-ADA4700-1ARDZ-ANALOG-DEVICES-INC-ADI

Precision Amplifiers 100Volt Precision Amplifie
CRCW120610K0FKEA

Mfr.#: CRCW120610K0FKEA

OMO.#: OMO-CRCW120610K0FKEA-VISHAY-DALE

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Disponibilidad
Valores:
Available
En orden:
1991
Ingrese la cantidad:
El precio actual de SIDR870ADP-T1-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
2,06 US$
2,06 US$
10
1,71 US$
17,10 US$
100
1,33 US$
133,00 US$
500
1,16 US$
580,00 US$
1000
0,96 US$
960,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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