SIHU4N80E-GE3

SIHU4N80E-GE3
Mfr. #:
SIHU4N80E-GE3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 800V Vds 30V Vgs IPAK (TO-251)
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SIHU4N80E-GE3 Ficha de datos
Entrega:
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Pago:
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HTML Datasheet:
SIHU4N80E-GE3 DatasheetSIHU4N80E-GE3 Datasheet (P4-P6)SIHU4N80E-GE3 Datasheet (P7)
ECAD Model:
Más información:
SIHU4N80E-GE3 más información
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-251-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
800 V
Id - Corriente de drenaje continua:
4.3 A
Rds On - Resistencia de la fuente de drenaje:
1.1 Ohms
Vgs th - Voltaje umbral puerta-fuente:
2 V
Vgs - Voltaje puerta-fuente:
10 V
Qg - Carga de puerta:
16 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
69 W
Configuración:
Único
Modo de canal:
Mejora
Embalaje:
Tubo
Serie:
E
Tipo de transistor:
1 N-Channel
Marca:
Vishay / Siliconix
Transconductancia directa - Mín .:
1.5 S
Otoño:
20 ns
Tipo de producto:
MOSFET
Hora de levantarse:
7 ns
Cantidad de paquete de fábrica:
75
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
26 ns
Tiempo típico de retardo de encendido:
12 ns
Tags
SIHU, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
E Series Power MOSFET N-Channel 800V VDS ±30V VGS 4.3A ID 3-Pin TO-251
***ment14 APAC
MOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W
***ark
Mosfet, N-Ch, 800V, 4.3A, 150Deg C, 69W; Transistor Polarity:n Channel; Continuous Drain Current Id:4.3A; Drain Source Voltage Vds:800V; On Resistance Rds(On):1.1Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
E Series High Voltage MOSFETs
Vishay Siliconix E Series High Voltage MOSFETs are super junction N-Channel power MOSFETs with a 30% reduction in specific ON-Resistance versus the S Series MOSFETs. These E Series high-performance MOSFETs feature low ON-resistance (RDS(on)), low input capacitance (Ciss), reduced capacitive switching losses, and ultra-low gate charge (Qg). The E series MOSFETs are also available in 850VDS high voltage variants with 3A drain current (ID), low RDS(ON) of 0.82Ω, and low gate charge (Qg). These high-performance MOSFETs come in different packages like TO-247AC, TO-220AB, TO-220 FULLPAK, TO-247AC, D2PAK (TO-263), IPAK (TO-251), DPAK (TO-252), and IPAK (TO-251). Typical applications include server and telecom power supplies, lighting, industrial, battery chargers, renewable energy, and SMPS.
Parte # Mfg. Descripción Valores Precio
SIHU4N80E-GE3
DISTI # SIHU4N80E-GE3-ND
Vishay SiliconixMOSFET N-CHAN 800V TO-251
RoHS: Compliant
Min Qty: 1
Container: Tube
3000In Stock
  • 6000:$0.8599
  • 3000:$0.8930
  • 500:$1.1576
  • 100:$1.4090
  • 25:$1.6536
  • 10:$1.7530
  • 1:$1.9500
SIHU4N80E-GE3
DISTI # SIHU4N80E-GE3
Vishay IntertechnologiesE Series Power MOSFET N-Channel 800V VDS ±30V VGS 4.3A ID 3-Pin TO-251 - Tape and Reel (Alt: SIHU4N80E-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 30000:$0.8119
  • 18000:$0.8339
  • 12000:$0.8579
  • 6000:$0.8949
  • 3000:$0.9219
SIHU4N80E-GE3
DISTI # 78AC6526
Vishay IntertechnologiesMOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W,Transistor Polarity:N Channel,Continuous Drain Current Id:4.3A,Drain Source Voltage Vds:800V,On Resistance Rds(on):1.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes3000
  • 1000:$0.9280
  • 500:$1.1200
  • 100:$1.2800
  • 50:$1.4100
  • 25:$1.5300
  • 10:$1.6600
  • 1:$1.9900
SIHU4N80E-GE3
DISTI # 78-SIHU4N80E-GE3
Vishay IntertechnologiesMOSFET 800V Vds 30V Vgs IPAK (TO-251)
RoHS: Compliant
2993
  • 1:$1.9700
  • 10:$1.6400
  • 100:$1.2700
  • 500:$1.1100
  • 1000:$0.9190
SIHU4N80E-GE3
DISTI # 2932937
Vishay IntertechnologiesMOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W
RoHS: Compliant
3000
  • 1000:$1.4300
  • 500:$1.5200
  • 250:$1.7800
  • 100:$2.1600
  • 10:$2.7600
  • 1:$3.3400
SIHU4N80E-GE3
DISTI # 2932937
Vishay IntertechnologiesMOSFET, N-CH, 800V, 4.3A, 150DEG C, 69W3000
  • 500:£0.8050
  • 250:£0.8630
  • 100:£0.9210
  • 10:£1.2200
  • 1:£1.6200
Imagen Parte # Descripción
MCP23017T-E/SS

Mfr.#: MCP23017T-E/SS

OMO.#: OMO-MCP23017T-E-SS

Interface - I/O Expanders 16bit Input/Output Exp I2C interface
CURN103-HF

Mfr.#: CURN103-HF

OMO.#: OMO-CURN103-HF

Rectifiers 1.0A 600V Ultra Fast Recovery
STD14NM50N

Mfr.#: STD14NM50N

OMO.#: OMO-STD14NM50N

MOSFET N-Ch 500V 0.246 ohm 12 A MDmesh II
STD4N62K3

Mfr.#: STD4N62K3

OMO.#: OMO-STD4N62K3

MOSFET N-Ch 620V 1.8 ohm 3.8 A SuperMESH3
ADG1433YRUZ-REEL7

Mfr.#: ADG1433YRUZ-REEL7

OMO.#: OMO-ADG1433YRUZ-REEL7

Analog Switch ICs IC -70dB 4 Ohm Triple SPDT iCMOS
STD14NM50N

Mfr.#: STD14NM50N

OMO.#: OMO-STD14NM50N-STMICROELECTRONICS

MOSFET N-CH 500V 12A DPAK
STD4N62K3

Mfr.#: STD4N62K3

OMO.#: OMO-STD4N62K3-STMICROELECTRONICS

MOSFET N-CH 620V 3.8A DPAK
ADG1433YRUZ-REEL7

Mfr.#: ADG1433YRUZ-REEL7

OMO.#: OMO-ADG1433YRUZ-REEL7-ANALOG-DEVICES

Analog Switch ICs IC -70dB 4 Ohm Triple SPDT iCMOS
LHL08TB152J

Mfr.#: LHL08TB152J

OMO.#: OMO-LHL08TB152J-TAIYO-YUDEN

Fixed Inductors INDCTR RADIAL STD 1500uH 5%
CURN103-HF

Mfr.#: CURN103-HF

OMO.#: OMO-CURN103-HF-COMCHIP-TECHNOLOGY

Rectifiers 1.0A 600V Ultra Fast Recovery
Disponibilidad
Valores:
Available
En orden:
1985
Ingrese la cantidad:
El precio actual de SIHU4N80E-GE3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
1,97 US$
1,97 US$
10
1,64 US$
16,40 US$
100
1,27 US$
127,00 US$
500
1,11 US$
555,00 US$
1000
0,92 US$
919,00 US$
Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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