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SI7820DN-T1-E3

SI7820DN-T1-E3
Mfr. #:
SI7820DN-T1-E3
Fabricante:
Vishay / Siliconix
Descripción:
MOSFET 200V Vds 20V Vgs PowerPAK 1212-8
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
SI7820DN-T1-E3 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Atributo del producto
Valor de atributo
Fabricante:
Vishay
Categoria de producto:
MOSFET
RoHS:
E
Tecnología:
Si
Estilo de montaje:
SMD / SMT
Paquete / Caja:
PowerPAK-1212-8
Nombre comercial:
TrenchFET
Embalaje:
Carrete
Altura:
1.04 mm
Longitud:
3.3 mm
Serie:
SI7
Ancho:
3.3 mm
Marca:
Vishay / Siliconix
Tipo de producto:
MOSFET
Cantidad de paquete de fábrica:
3000
Subcategoría:
MOSFET
Parte # Alias:
SI7820DN-T1
Tags
SI7820DN-T, SI782, SI78, SI7
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Si7820DN Series 200 V 1.7 A 1.5 W N-Channel Mosfet - PowerPAK® 1212-8
***et
Trans MOSFET N-CH 200V 1.7A 8-Pin PowerPAK 1212 T/R
***ark
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:2600mA; Drain Source Voltage, Vds:200V; On Resistance, Rds(on):0.25ohm; Rds(on) Test Voltage, Vgs:20V; Threshold Voltage, Vgs Typ:4V; Power Dissipation, Pd:1.5W ;RoHS Compliant: Yes
***ow.cn
SI7464DP-T1-GE3 Vishay MOSFETs Transistor N-CH 200V 1.8A 8-Pin PowerPAK SO T/R - Arrow.com
***ical
Trans MOSFET N-CH 200V 1.8A 8-Pin PowerPAK SO T/R
*** Electronics
MOSFET 200V 2.8A 4.2W 240mohm @ 10V
***ark
N-CH 200-V (D-S) FAST SWITCHING MOSF
***ure Electronics
Single N-Channel 200 V 0.24 Ohms Surface Mount Power Mosfet - SOIC-8
***el Electronic
Mosfet; Power; N-ch; Vdss 200V; Rds(on) 0.195 Ohm; Id 1.7A; SO-8; Pd 1.5W; Vgs +/-20V
***ical
Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R
***enic
200V 1.7A 1.5W 240m´Î@10V2.2A 4V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS
***ure Electronics
N-Channel 200 V 0.240 Ohm 1.5 W Surface Mount Power Mosfet - SOIC-8
***ical
Trans MOSFET N-CH 200V 1.7A 8-Pin SOIC N T/R
***enic
200V 1.7A 1.5W 240m´Î@10V2.2A 4V@250Ã×A N Channel SOIC-8_150mil MOSFETs ROHS
***emi
N-Channel Trench® MOSFET, UltraFET, 200V, 9.5A, 200mΩ
***ure Electronics
N-Channel 200 V 200 mOhm Surface Mount UltraFET Trench Mosfet - Power-33-8
***rchild Semiconductor
This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized for power management applications.
***ment14 APAC
MOSFET, N CH, 200V, 9.5A, POWER33-8; Transistor Polarity:N Channel; Continuous Drain Current Id:2.2A; Drain Source Voltage Vds:200V; On Resistance Rds(on):200mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.2V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:9.5A; Package / Case:Power 33; Power Dissipation Pd:42W; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:3.2V; Voltage Vgs Rds on Measurement:10V
***eco
Transistor MOSFET P Channel 150 Volt 2.2 Amp 8 Pin SOIC
***ure Electronics
Single P-Channel 150 V 240 mOhm 49 nC HEXFET® Power Mosfet - SOIC-8
***(Formerly Allied Electronics)
MOSFET, P-CHANNEL, -150V, -2.2A, 240 mOhm, 33 nC Qg, SO-8
***ical
Trans MOSFET P-CH 150V 2.2A 8-Pin SOIC Tube
***ineon SCT
-150V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
***ineon
Benefits: RoHS Compliant; Low RDS(on); Industry-leading quality; Dynamic dv/dt Rating; Fast Switching; Fully Avalanche Rated; 175C Operating Temperature; P-Channel MOSFET
***nell
MOSFET, P; Transistor Polarity: P Channel; Continuous Drain Current Id: 2.2A; Drain Source Voltage Vds: -150V; On Resistance Rds(on): 0.24ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; Power Dissipation Pd: 2.5W; Transistor Case Style: SOIC; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018); Current Id Max: -2.2A; Operating Temperature Min: -55°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 150V; Voltage Vgs Max: -5V; Voltage Vgs Rds on Measurement: 10V
Parte # Mfg. Descripción Valores Precio
SI7820DN-T1-E3
DISTI # V72:2272_09216389		Vishay IntertechnologiesTrans MOSFET N-CH 200V 1.7A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		65
  • 25:$1.1121
  • 10:$1.1157
  • 1:$1.2871
SI7820DN-T1-E3
DISTI # SI7820DN-T1-E3CT-ND		Vishay SiliconixMOSFET N-CH 200V 1.7A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		1172In Stock
  • 1000:$0.7005
  • 500:$0.8874
  • 100:$1.1442
  • 10:$1.4480
  • 1:$1.6300
SI7820DN-T1-E3
DISTI # SI7820DN-T1-E3DKR-ND		Vishay SiliconixMOSFET N-CH 200V 1.7A 1212-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		1172In Stock
  • 1000:$0.7005
  • 500:$0.8874
  • 100:$1.1442
  • 10:$1.4480
  • 1:$1.6300
SI7820DN-T1-E3
DISTI # SI7820DN-T1-E3TR-ND		Vishay SiliconixMOSFET N-CH 200V 1.7A 1212-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.6348
SI7820DN-T1-E3
DISTI # 25790059		Vishay IntertechnologiesTrans MOSFET N-CH 200V 1.7A 8-Pin PowerPAK 1212 T/R
RoHS: Compliant		65
  • 25:$1.1121
  • 10:$1.1157
SI7820DN-T1-E3
DISTI # SI7820DN-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 200V 1.7A 8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SI7820DN-T1-E3)
RoHS: Not Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.9749
  • 6000:$0.9459
  • 12000:$0.9069
  • 18000:$0.8819
  • 30000:$0.8579
SI7820DN-T1-E3
DISTI # SI7820DN-T1-E3		Vishay IntertechnologiesTrans MOSFET N-CH 200V 1.7A 8-Pin PowerPAK 1212 T/R (Alt: SI7820DN-T1-E3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€1.5289
  • 6000:€1.0969
  • 12000:€0.8899
  • 18000:€0.7859
  • 30000:€0.7529
SI7820DN-T1-E3
DISTI # 09X6453		Vishay IntertechnologiesMOSFET, N CHANNEL, 200V, 1.7A, POWERPAK-8,Transistor Polarity:N Channel,Continuous Drain Current Id:1.7A,Drain Source Voltage Vds:200V,On Resistance Rds(on):0.2ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V , RoHS Compliant: Yes0
  • 1:$1.8300
  • 10:$1.7800
  • 100:$1.4000
  • 250:$1.3300
  • 500:$1.2500
  • 1000:$0.9950
SI7820DN-T1-E3
DISTI # 57J5743		Vishay IntertechnologiesN CH MOSFET, 200V, 2.6A, POWERPAK, FULL REEL,Transistor Polarity:N Channel,Continuous Drain Current Id:2.6A,Drain Source Voltage Vds:200V,On Resistance Rds(on):250mohm,Rds(on) Test Voltage Vgs:20V,Threshold Voltage Vgs:4V , RoHS Compliant: Yes0
  • 1:$0.9380
  • 3000:$0.9310
  • 6000:$0.8870
  • 12000:$0.7860
SI7820DN-T1-E3
DISTI # 781-SI7820DN-T1-E3		Vishay IntertechnologiesMOSFET 200V Vds 20V Vgs PowerPAK 1212-8
RoHS: Compliant		4112
  • 1:$1.5800
  • 10:$1.3100
  • 100:$1.0200
  • 500:$0.8850
  • 1000:$0.8440
  • 3000:$0.8430
SI7820DN-T1-E3Vishay Intertechnologies 1837
    SI7820DN-T1-E3. 2878
      SI7820DN-T1-E3Vishay IntertechnologiesMOSFET 200V Vds 20V Vgs PowerPAK 1212-8Americas -
        SI7820DN-T1-E3
        DISTI # C1S803601298393        		Vishay IntertechnologiesMOSFETs
        RoHS: Compliant        		65
        • 25:$1.1121
        • 10:$1.1157
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        Disponibilidad
        Valores:
        Available
        En orden:
        1988
        Ingrese la cantidad:
        El precio actual de SI7820DN-T1-E3 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
        Precio de referencia (USD)
        Cantidad
        Precio unitario
        Ext. Precio
        1
        1,57 US$
        1,57 US$
        10
        1,30 US$
        13,00 US$
        100
        1,01 US$
        101,00 US$
        500
        0,88 US$
        442,00 US$
        1000
        0,73 US$
        733,00 US$
        Debido a la escasez de semiconductores a partir de 2021, el precio inferior es el precio normal antes de 2021. Envíe una consulta para confirmar.
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