IPA60R120P7XKSA1

IPA60R120P7XKSA1
Mfr. #:
IPA60R120P7XKSA1
Fabricante:
Infineon Technologies
Descripción:
MOSFET HIGH POWER_NEW
Ciclo vital:
Nuevo de este fabricante.
Ficha de datos:
IPA60R120P7XKSA1 Ficha de datos
Entrega:
DHL FedEx Ups TNT EMS
Pago:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
Más información:
IPA60R120P7XKSA1 más información
Atributo del producto
Valor de atributo
Fabricante:
Infineon
Categoria de producto:
MOSFET
RoHS:
Y
Tecnología:
Si
Estilo de montaje:
A través del orificio
Paquete / Caja:
TO-220FP-3
Número de canales:
1 Channel
Polaridad del transistor:
Canal N
Vds - Voltaje de ruptura de drenaje-fuente:
600 V
Id - Corriente de drenaje continua:
26 A
Rds On - Resistencia de la fuente de drenaje:
100 mOhms
Vgs th - Voltaje umbral puerta-fuente:
3 V
Vgs - Voltaje puerta-fuente:
20 V
Qg - Carga de puerta:
36 nC
Temperatura mínima de funcionamiento:
- 55 C
Temperatura máxima de funcionamiento:
+ 150 C
Pd - Disipación de energía:
28 W
Configuración:
Único
Modo de canal:
Mejora
Nombre comercial:
CoolMOS
Embalaje:
Tubo
Serie:
CoolMOS P7
Tipo de transistor:
1 N-Channel
Marca:
Infineon Technologies
Otoño:
6 ns
Tipo de producto:
MOSFET
Hora de levantarse:
14 ns
Cantidad de paquete de fábrica:
500
Subcategoría:
MOSFET
Tiempo de retardo de apagado típico:
81 ns
Tiempo típico de retardo de encendido:
21 ns
Parte # Alias:
IPA60R120P7 SP001658376
Unidad de peso:
0.068784 oz
Tags
IPA60R12, IPA60R1, IPA60R, IPA60, IPA6, IPA
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
600V CoolMOS P7 MOSFETs
Infineon 600V CoolMOS P7 MOSFETs are 7th generation devices and utilize revolutionary technology for high voltage power MOSFETs. The transistors are designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS P7 combines the benefits of a fast switching SJ MOSFET with excellent ease of use. The 600V P7 feature very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Extremely low switching and conduction losses make switching applications even more efficient, compact and cooler.
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
Parte # Mfg. Descripción Valores Precio
IPA60R120P7XKSA1
DISTI # 24576979
Infineon Technologies AGP7 Power Transistor500
  • 500:$1.9872
IPA60R120P7XKSA1
DISTI # IPA60R120P7XKSA1-ND
Infineon Technologies AGMOSFET N-CHANNEL 600V 26A TO220
RoHS: Compliant
Min Qty: 1
Container: Tube
27In Stock
  • 1000:$2.0149
  • 500:$2.3891
  • 100:$2.9504
  • 10:$3.5980
  • 1:$4.0300
IPA60R120P7XKSA1
DISTI # SP001658376
Infineon Technologies AGHIGH POWER_NEW (Alt: SP001658376)
RoHS: Compliant
Min Qty: 1
Europe - 350
  • 1:€1.8900
  • 10:€1.7900
  • 25:€1.6900
  • 50:€1.5900
  • 100:€1.5900
  • 500:€1.4900
  • 1000:€1.3900
IPA60R120P7XKSA1
DISTI # IPA60R120P7XKSA1
Infineon Technologies AGHIGH POWER_NEW - Rail/Tube (Alt: IPA60R120P7XKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$1.7900
  • 1000:$1.7900
  • 2000:$1.6900
  • 3000:$1.5900
  • 5000:$1.5900
IPA60R120P7XKSA1
DISTI # 93AC7090
Infineon Technologies AGMOSFET, N-CH, 600V, 26A, 28W, TO-220FP,Transistor Polarity:N Channel,Continuous Drain Current Id:26A,Drain Source Voltage Vds:600V,On Resistance Rds(on):0.1ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3.5V,Power RoHS Compliant: Yes90
  • 500:$1.7400
  • 250:$1.9400
  • 100:$2.0400
  • 50:$2.1400
  • 25:$2.2500
  • 10:$2.3500
  • 1:$2.7700
IPA60R120P7XKSA1Infineon Technologies AGSingle N-Channel 600 V 120 mOhm 36 nC CoolMOS Power Mosfet - TO-220-3FP
RoHS: Not Compliant
60Tube
  • 10:$1.9200
  • 50:$1.6700
  • 100:$1.6300
  • 250:$1.5800
  • 500:$1.5400
IPA60R120P7XKSA1
DISTI # 726-IPA60R120P7XKSA1
Infineon Technologies AGMOSFET HIGH POWER_NEW
RoHS: Compliant
1094
  • 1:$3.4600
  • 10:$2.9400
  • 100:$2.5500
  • 250:$2.4200
  • 500:$2.1700
  • 1000:$1.8300
  • 2500:$1.7400
IPA60R120P7XKSA1
DISTI # 2986444
Infineon Technologies AGMOSFET, N-CH, 600V, 26A, 28W, TO-220FP
RoHS: Compliant
90
  • 1000:$2.7100
  • 500:$3.1900
  • 250:$3.4700
  • 100:$3.6900
  • 10:$4.3900
  • 1:$5.7200
IPA60R120P7XKSA1
DISTI # XSKDRABV0021202
Infineon Technologies AGProgrammable Timer, 1 Timer(s), CMOS, PDSO14
RoHS: Compliant
400 in Stock0 on Order
  • 400:$2.7360
  • 171:$2.9280
IPA60R120P7XKSA1
DISTI # 2986444
Infineon Technologies AGMOSFET, N-CH, 600V, 26A, 28W, TO-220FP
RoHS: Compliant
130
  • 500:£1.8000
  • 250:£1.9600
  • 100:£2.0800
  • 10:£2.4800
  • 1:£3.2300
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Disponibilidad
Valores:
Available
En orden:
1984
Ingrese la cantidad:
El precio actual de IPA60R120P7XKSA1 es solo de referencia, si desea obtener el mejor precio, envíe una consulta o envíe un correo electrónico directo a nuestro equipo de ventas [email protected]
Precio de referencia (USD)
Cantidad
Precio unitario
Ext. Precio
1
3,46 US$
3,46 US$
10
2,94 US$
29,40 US$
100
2,55 US$
255,00 US$
250
2,42 US$
605,00 US$
500
2,17 US$
1 085,00 US$
1000
1,83 US$
1 830,00 US$
2500
1,74 US$
4 350,00 US$
5000
1,67 US$
8 350,00 US$
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