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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IPB039N10N3GE8187ATMA1 DISTI # V36:1790_06377394 | Infineon Technologies AG | N-KANAL POWER MOS | 0 |
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| IPB039N10N3GE8187ATMA1 DISTI # IPB039N10N3GE8187ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| IPB039N10N3GE8187ATMA1 DISTI # IPB039N10N3GE8187ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 160A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GE8187ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 | |
| IPB039N10N3GE8187ATMA1 DISTI # 726-IPB039N10N3GE818 | Infineon Technologies AG | MOSFET MV POWER MOS RoHS: Compliant | 0 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: IPB039N10N3 G OMO.#: OMO-IPB039N10N3-G |
MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 |
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Mfr.#: IPB039N10N3GATMA1 OMO.#: OMO-IPB039N10N3GATMA1 |
MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 |
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Mfr.#: IPB039N10N3GE8187ATMA1 OMO.#: OMO-IPB039N10N3GE8187ATMA1 |
MOSFET MV POWER MOS |
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Mfr.#: IPB039N10N3GE8187ATMA1 |
MOSFET N-CH 100V 160A TO263-7 |
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Mfr.#: IPB039N10N3GXT OMO.#: OMO-IPB039N10N3GXT-1190 |
Trans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1) |
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Mfr.#: IPB039N10N3G OMO.#: OMO-IPB039N10N3G-1190 |
Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA |
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Mfr.#: IPB039N10N3GATMA OMO.#: OMO-IPB039N10N3GATMA-1190 |
Nuevo y original |
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Mfr.#: IPB039N10N3GATMA1 , 2SD1 |
Nuevo y original |
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Mfr.#: IPB039N10N3GE8197ATMA1 |
Nuevo y original |
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Mfr.#: IPB039N10N3 G OMO.#: OMO-IPB039N10N3-G-126 |
IGBT Transistors MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 |