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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| Parte # | Mfg. | Descripción | Valores | Precio |
|---|---|---|---|---|
| IPB039N10N3GE8187ATMA1 DISTI # V36:1790_06377394 | Infineon Technologies AG | N-KANAL POWER MOS | 0 |
|
| IPB039N10N3GE8187ATMA1 DISTI # IPB039N10N3GE8187ATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 100V 160A TO263-7 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| IPB039N10N3GE8187ATMA1 DISTI # IPB039N10N3GE8187ATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 100V 160A 7-Pin TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GE8187ATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel | Americas - 0 | |
| IPB039N10N3GE8187ATMA1 DISTI # 726-IPB039N10N3GE818 | Infineon Technologies AG | MOSFET MV POWER MOS RoHS: Compliant | 0 |
|
| Imagen | Parte # | Descripción |
|---|---|---|
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Mfr.#: IPB039N10N3 G OMO.#: OMO-IPB039N10N3-G |
MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 |
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Mfr.#: IPB039N10N3GATMA1 OMO.#: OMO-IPB039N10N3GATMA1 |
MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 |
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Mfr.#: IPB039N10N3GE8187ATMA1 OMO.#: OMO-IPB039N10N3GE8187ATMA1 |
MOSFET MV POWER MOS |
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Mfr.#: IPB039N10N3GATMA1 |
MOSFET N-CH 100V 160A TO263-7 |
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Mfr.#: IPB039N10N3GXT OMO.#: OMO-IPB039N10N3GXT-1190 |
Trans MOSFET N-CH 100V 160A 7-Pin(6+Tab) TO-263 T/R - Tape and Reel (Alt: IPB039N10N3GATMA1) |
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Mfr.#: IPB039N10N3G OMO.#: OMO-IPB039N10N3G-1190 |
Power Field-Effect Transistor, 160A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AA |
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Mfr.#: IPB039N10N3GATMA1 , 2SD1 |
Nuevo y original |
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Mfr.#: IPB039N10N3GE8197ATMA1 |
Nuevo y original |
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Mfr.#: IPB039N10N3 G OMO.#: OMO-IPB039N10N3-G-126 |
IGBT Transistors MOSFET N-Ch 100V 160A D2PAK-6 OptiMOS 3 |
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Mfr.#: IPB039N10N3GE818XT OMO.#: OMO-IPB039N10N3GE818XT-317 |
RF Bipolar Transistors MOSFET N-Ch 40V 80A D2PAK-2 |
